Autor(en)
Takahashi, Takanori; Fujii, Mami N; Miyanaga, Ryoko; Miyanaga, Miki; Ishikawa, Yasuaki; Uraoka, Yukiharu
Titel
Unique degradation under AC stress in high-mobility amorphous In-W-Zn-O thin-film transistors
Teil von
  • Applied physics express, 2020-04-23, Vol.13 (5), p.54003
Ort / Verlag
BRISTOL: IOP Publishing
Links zum Volltext
Quelle
Web of Science
Beschreibungen
We report the existence of a degradation mode under AC stress in high-mobility amorphous In-W-Zn-O (IWZO) thin-film transistors (TFTs). The application of gate pulse to the IWZO-TFT reduced the on-current of the transfer characteristics, increased the subthreshold swing (SS) values, and resulted in photon emission around the source and drain electrodes of the TFT. We considered that the degradation is attributed to the breaking of the weak metal-oxygen bonds by hot carriers around the electrode edges. We expect an understanding of this degradation phenomenon to contribute to the materials design toward high-mobility and high-stability oxide semiconductors.
Format
Sprache(n)
Englisch
Identifikator(en)
ISSN: 1882-0778
ISSN: 1882-0786
DOI: 10.35848/1882-0786/ab88c5

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