Details

Autor(en) / Beteiligte

• Schroeder, Raoul
• Majewski, Leszek A.
• Voigt, Monika
• Grell, Martin

Titel

All-organic single-transistor permanent memory device

Ist Teil von

• MRS proceedings, 2004, Vol.830, Article D6.19

Ort / Verlag

New York, USA: Cambridge University Press

Erscheinungsjahr

2004

Beschreibungen/Notizen

• We present an all-organic permanent memory transistor using an amorphous spin-cast gate insulator. This gate insulator exhibits a remanent polarisation in its amorphous state, a unique property, which is best described as “ferroelectric-like”. The memory transistor thus built perform extremely well, even when compared to inorganic ferroelectric memory transistors; the memory “on” to memory “off” current ratio is close to 3×10-a4, while time-dependent studies show retention times of 14 hours and more.