Details

Autor(en) / Beteiligte

• Nagai, Takehiko
• Smets, Arno H. M.
• Kondo, Michio

Titel

Detection of SiH 3 radicals and cluster formation in a highly H 2 diluted SiH 4 VHF plasma by means of time resolved cavity ring down spectroscopy

Ist Teil von

• MRS proceedings, 2006, Vol.910, Article 0910-A08-07

Erscheinungsjahr

2006

Beschreibungen/Notizen

• Abstract The spatial distribution of the SiH 3 radicals between the electrodes of a hydrogen diluted silane VHF plasma under thin film hydrogenated microcrystalline silicon (μc-Si:H) growth conditions has been measured using the time resolved cavity ringdown (τ-CRD) absorption spectroscopy technique. The μc-Si:H growth rate is estimated from the measured spatial SiH 3 profiles using a simple model based upon diffusion controlled flux of SiH 3 radicals to the electrode surface, where the SiH 3 can react with the film surface. The calculated value of μc-Si:H growth rate roughly agrees with the value of the experimentally determined growth rate. This agreement implies that the SiH3 radical is the main growth contributor to the μc-Si:H growth. Furthermore, the τ-CRD reveals the growth kinetics of the clusters in the plasma by light scattering at these clusters on time scales of 1 s after the plasma ignition.