Sie befinden Sich nicht im Netzwerk der Universität Paderborn. Der Zugriff auf elektronische Ressourcen ist gegebenenfalls nur via VPN oder Shibboleth (DFN-AAI) möglich. mehr Informationen...
Study of Spatial Distribution of SiH 3 Radicals in Very High Frequency Plasma Using Cavity Ringdown Spectroscopy
Ist Teil von
Japanese Journal of Applied Physics, 2006-10, Vol.45 (10S), p.8095
Erscheinungsjahr
2006
Link zum Volltext
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
Time-resolved cavity ringdown (τ-CRD) spectroscopy has been applied to measure the SiH 3 radical density profile between the electrodes in a pulsed SiH 4 /H 2 very high frequency (VHF) plasma under µc-Si:H deposition conditions. On time scales smaller than ∼1 s, cavity loss reflects the light absorption by SiH 3 radicals, whereas on time scales larger than ∼1 s, an additional cavity loss due to light scattering at Si clusters and dust particles, generated in the pulsed SiH 4 /H 2 VHF plasma, is observed. From the measurements of the spatial distribution of SiH 3 radicals between electrodes, the incident SiH 3 radical flux to the electrode surface is determined, which reveals a significant contribution of SiH 3 radicals to µc-Si:H thin film growth.