Details

Autor(en) / Beteiligte

• Rojas, Jhonathan Prieto
• Ghoneim, Mohamed Tarek
• Young, Chadwin D.
• Hussain, Muhammad Mustafa

Titel

Flexible High- \kappa/Metal Gate Metal/Insulator/Metal Capacitors on Silicon (100) Fabric

Ist Teil von

• IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3305-3309

Ort / Verlag

New York, NY: IEEE

Erscheinungsjahr

2013

Link zum Volltext

• Volltext

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• Implementation of memory on bendable substrates is an important step toward a complete and fully developed notion of mechanically flexible computational systems. In this paper, we have demonstrated a simple fabrication flow to build metal-insulator-metal capacitors, key components of dynamic random access memory, on a mechanically flexible silicon (100) fabric. We rely on standard microfabrication processes to release a thin sheet of bendable silicon (area: 18 cm 2 and thickness: 25 μm) in an inexpensive and reliable way. On such platform, we fabricated and characterized the devices showing mechanical robustness (minimum bending radius of 10 mm at an applied strain of 83.33% and nominal strain of 0.125%) and consistent electrical behavior regardless of the applied mechanical stress. Furthermore, and for the first time, we performed a reliability study suggesting no significant difference in performance and showing an improvement in lifetime projections.