Details

Autor(en) / Beteiligte

• Schroeder, R.
• Majewski, L.A.
• Voigt, M.
• Grell, M.

Titel

Memory performance and retention of an all-organic ferroelectric-like memory transistor

Ist Teil von

• IEEE electron device letters, 2005-02, Vol.26 (2), p.69-71

Ort / Verlag

New York, NY: IEEE

Erscheinungsjahr

2005

Link zum Volltext

• IEEE_Xplore

Quelle

IEEE Xplore (IEEE/IET Electronic Library - IEL)

Beschreibungen/Notizen

• We have built a nonvolatile memory field-effect transistor (FET)-based on organic compounds. The gate-insulating polymer features ferroelectric-like characteristics when spun from solution into an amorphous phase. Thus, the memory transistor is built using techniques developed for organic transistors without requiring high temperature annealing steps. The memory exhibits channel resistance modulations and retention times close in performance to inorganic ferroelectric FETs (FEFETs), yet at a fraction of the cost.