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Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization
Ist Teil von
Applied physics letters, 2020-02, Vol.116 (6)
Ort / Verlag
Melville: American Institute of Physics
Erscheinungsjahr
2020
Link zum Volltext
Quelle
Scitation (American Institute of Physics)
Beschreibungen/Notizen
Deposition, annealing, and integration of ferroelectric
Hf
x
Zr
1
−
x
O
2 (HZO) thin films on the high-mobility semiconductor InAs using atomic layer deposition are investigated. Electrical characterization reveals that the HZO films on InAs exhibit an enhanced remanent polarization compared to films formed on a reference TiN substrate, exceeding
20
μ
C
/
cm
2 even down to an annealing temperature of
370
°C. For device applications, the thermal processes required to form the ferroelectric HZO phase must not degrade the high-κ/InAs interface. We find by evaluation of the capacitance–voltage characteristics that the electrical properties of the high-κ/InAs are not significantly degraded by the annealing process, and high-resolution transmission electron microscopy verifies a maintained sharp high-κ/InAs interface.