Details

Autor(en) / Beteiligte

• Ali, T.
• Polakowski, P.
• Riedel, S.
• Büttner, T.
• Kämpfe, T.
• Rudolph, M.
• Pätzold, B.
• Seidel, K.
• Löhr, D.
• Hoffmann, R.
• Czernohorsky, M.
• Kühnel, K.
• Thrun, X.
• Hanisch, N.
• Steinke, P.
• Calvo, J.
• Müller, J.

Titel

Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET: A material relation to device physics

Ist Teil von

• Applied physics letters, 2018-05, Vol.112 (22)

Ort / Verlag

Melville: American Institute of Physics

Erscheinungsjahr

2018

Quelle

AIP Journals (American Institute of Physics)

Beschreibungen/Notizen

• The recent discovery of ferroelectricity in thin film HfO2 materials renewed the interest in ferroelectric FET (FeFET) as an emerging nonvolatile memory providing a potential high speed and low power Flash alternative. Here, we report more insight into FeFET performance by integrating two types of ferroelectric (FE) materials and varying their properties. By varying the material type [HfO2 (HSO) versus hafnium zirconium oxide (HZO)], optimum content (Si doping/mixture ratio), and film thickness, a material relation to FeFET device physics is concluded. As for the material type, an improved FeFET performance is observed for HZO integration with memory window (MW) comparable to theoretical values. For different Si contents, the HSO based FeFET exhibited a MW trend with different stabilized phases. Similarly, the HZO FeFET shows MW dependence on the Hf:Zr mixture ratio. A maximized MW is obtained with cycle ratios of 16:1 (HfO2:Si) and 1:1 (Hf:Zr) as measured on HSO and HZO based FeFETs, respectively. The thickness variation shows a trend of increasing MW with the increased FE layer thickness confirming early theoretical predictions. The FeFET material aspects and stack physics are discussed with insight into the interplay factors, while optimum FE material parameters are outlined in relation to performance.