Details

Autor(en) / Beteiligte

• Thakur, A
• Dhiman, R

Titel

SiGe/Si hetero nanotube JLFET for improved performance: proposal and investigation

Ist Teil von

• Electronics letters, 2019-12, Vol.55 (25), p.1359-1361

Ort / Verlag

The Institution of Engineering and Technology

Erscheinungsjahr

2019

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The authors report, for the first time, a novel SiGe/Si n-type hetero nanotube (HNT) junctionless field-effect transistor (JLFET), which leads to a remarkably enhanced performance below the sub-10 nm gate length. It is shown that valence band discontinuity in the HNT JLFET causes tunnelling width of the channel–drain interface to increase and therefore diminishes the lateral tunnelling of electrons in the OFF state. The impact of high-κ spacers and core gate diameter on the dynamic performance of HNT JLFET has also been studied. They show that the inclusion of high-κ spacers does not affect the dynamic performance of the HNT JLFET. It is demonstrated using calibrated 2D simulations that the proposed device exhibits a smaller value of DIBL 4 mV/V, sub-threshold slope almost 60 mV/decade, and an improved ION/IOFF ratio of ∼1012 even for sub-10 nm gate lengths.