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In this article we present an integration technique for low-voltage DNTT-based TFTs for flexible electronic applications. Therefore, a high-k nanocomposite combining the flexibility of its polymeric matrix and the high permittivity of the incorporated inorganic material was used as gate dielectric layer. The influence of a conventional photolithography process upon the dielectric layer is analyzed regarding electrical instabilities in the device characteristics. The impact of an implemented sacrificial layer to reduce chemical stress to the insulating film during photolithography is evaluated. Furthermore, first inverter circuits were integrated and electrically characterized. Additionally, the implementation of this sacrificial layer can be used for future complementary circuit design.
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•The influence of contact photolithography on a nanocomposite dielectric was analyzed.•The electrical characteristics of DNTT-based TFTs were evaluated.•Negligible hysteretic behavior of the TFT was achieved by using a sacrificial layer.•Inverter circuits were integrated and electrically characterized.•Maximum process temperature of 120°C