Details

Autor(en) / Beteiligte

• Gupta, Santosh Kumar
• Baishya, Srimanta

Titel

Analog and RF Performance Analysis of a Junctionless Electrically Induced Source/Drain Extension Cylindrical Surround Gate (JLEJ-CSG) MOSFET

Ist Teil von

• Journal of the Institution of Engineers (India). Series B, Electrical Engineering, Electronics and telecommunication engineering, Computer engineering, 2015-09, Vol.96 (3), p.211-216

Ort / Verlag

New Delhi: Springer India

Erscheinungsjahr

2015

Link zum Volltext

Quelle

SpringerLink (Online service)

Beschreibungen/Notizen

• Junctionless (JL) transistors have recently been reported as strong candidate for the future technology nodes because of ease of manufacturing and improved performance over conventional MOSFETs. In this paper, the analog and RF performances of a JL transistor have been evaluated with metal gate structure having higher work function in the middle with two side gates of lower work function (electrically induced source/drain junctions, EJ). This triple metal gate JLEJ cylindrical surrounding gate (CSG) MOSFET provides better response in terms of intrinsic gain, transconductance generation factor, early voltage, unity gain transition frequency, maximum frequency of oscillation, etc. over single metal junctionless cylindrical surrounding gate (JLSM) transistors. However, the analog and RF performance metrics have been observed to be degraded because of quantum mechanical effects. The I ON /I OFF ratio is improved by more than 10 5 times.