Details

Autor(en) / Beteiligte

• Zhang, Hao
• Chen, Chuantong
• Nagao, Shijo
• Suganuma, Katsuaki

Titel

Thermal Fatigue Behavior of Silicon-Carbide-Doped Silver Microflake Sinter Joints for Die Attachment in Silicon/Silicon Carbide Power Devices

Ist Teil von

• Journal of electronic materials, 2017-02, Vol.46 (2), p.1055-1060

Ort / Verlag

New York: Springer US

Erscheinungsjahr

2017

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• We studied the thermal fatigue behavior of submicron silicon carbide particle (SiC p )-doped silver (Ag) microflake sinter joints for die attachment in next-generation power devices. Si dummy chips and direct bonded copper substrates with various metallization schemes were bonded using SiC p -doped Ag microflakes under mild conditions (250°C, 30 min, 0.4 MPa). The SiC p was distributed homogeneously in the porous Ag network and inhibited morphological evolution during thermal cycling tests. The shear strength of as-sintered pure Ag and SiC p -added joints was ∼50 MPa and 35 MPa, respectively. Thermal cycling tests from −40°C to 250°C were conducted for up to 1000 cycles (hours) to characterize the thermostability of the bonded joints. After 1000 cycles, joints with and without SiC p experienced bonding degradation, with shear strength of ∼25 MPa and 20 MPa, respectively. Thus, after 1000 cycles, the shear strength of pure Ag and SiC p -doped joints decreased by 58% and 42%, respectively, compared with their maximum value. Coarsening of porous Ag occurred in pure Ag joints. SiC p addition inhibited morphological evolution of SiC p -doped joints during thermal cycling. However, vertical cracks generated by thermal stress were observed in joints both with and without SiC p , which may limit long-term reliability.