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Thermoelectric properties of porous silicon
Applied physics. A, Materials science & processing, 2012-06, Vol.107 (4), p.789-794
2012

Details

Autor(en) / Beteiligte
Titel
Thermoelectric properties of porous silicon
Ist Teil von
  • Applied physics. A, Materials science & processing, 2012-06, Vol.107 (4), p.789-794
Ort / Verlag
Berlin/Heidelberg: Springer-Verlag
Erscheinungsjahr
2012
Link zum Volltext
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
  • We have studied the thermoelectric properties of porous silicon, a nanostructured, yet single-crystalline form of silicon. Using electrochemical etching, liquid-phase doping, and high-temperature passivation, we show that porous Si can be fabricated such that it has thermoelectric properties superior to bulk Si, for both n- and p-type doping. Hall measurements reveal that the charge carrier mobility is reduced compared to the bulk material which presently limits the increase in thermoelectric efficiency.
Sprache
Englisch
Identifikatoren
ISSN: 0947-8396
eISSN: 1432-0630
DOI: 10.1007/s00339-012-6879-5
Titel-ID: cdi_crossref_primary_10_1007_s00339_012_6879_5
Format
–
Schlagworte
Characterization and Evaluation of Materials, Condensed Matter Physics, Condensed matter: electronic structure, electrical, magnetic, and optical properties, Conductivity phenomena in semiconductors and insulators, Electronic transport in condensed matter, Exact sciences and technology, Machines, Manufacturing, Nanotechnology, Optical and Electronic Materials, Physics, Physics and Astronomy, Processes, Rapid Communication, Surfaces and Interfaces, Thermoelectric and thermomagnetic effects, Thin Films

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