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Autor(en) / Beteiligte
Titel
SMART Cast‐Monocrystalline p‐Type Silicon Passivated Emitter and Rear Cells: Efficiency Benchmark and Bulk Lifetime Analysis
Ist Teil von
  • Solar RRL, 2021-04, Vol.5 (4), p.2000752-n/a
Ort / Verlag
Wiley
Erscheinungsjahr
2021
Link zum Volltext
Quelle
Wiley Online Library
Beschreibungen/Notizen
  • Herein, boron‐doped cast‐monocrystalline silicon wafers that have been fabricated using the Seed Manipulation for ARtificially controlled defect Technique (SMART mono‐Si) are examined. Their suitability for passivated emitter and rear cell (PERC) fabrication is investigated. Applying a zero busbar layout energy conversion efficiencies of η = 21.9% for SMART mono‐Si, η = 22.2% for gallium‐doped Cz‐Si (Cz‐Si:Ga), and η = 22.3% for boron‐doped Cz‐Si (Cz‐Si:B) are achieved at similar doping levels between 0.7 Ω cm ≤ ρB ≤ 1.0 Ω cm. Therefore, SMART mono‐Si PERCs show almost the same performance as Cz‐Si PERCs. Apart from the performance of SMART mono‐Si PERCs, the minority charge carrier bulk lifetime τB of the SMART mono‐Si wafers after different high‐temperature process steps in the PERC process flow is investigated. After emitter formation, this analysis confirms the high material quality of SMART mono‐Si yielding τB ≈ 1.3 ms at an injection level of Δn = 1015 cm−3. The bulk lifetime after firing is similar to the level determined for mCz‐Si:B and Cz‐Si:Ga reference wafers of similar doping level. In this work, cast‐mono silicon wafers were manufactured, using a new technique that completely blocks unwanted ingrowth of parasitic grains from the crucible into the ingot volume. This technique was developed at Fraunhofer ISE and the wafers are also manufactured in‐house. For the first time, this material gets introduced into p‐type PERC processing and benchmarked to Cz‐Si in terms of cell efficiency and minority charge carrier bulk lifetime.
Sprache
Englisch
Identifikatoren
ISSN: 2367-198X
eISSN: 2367-198X
DOI: 10.1002/solr.202000752
Titel-ID: cdi_crossref_primary_10_1002_solr_202000752

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