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Halbleiterelektronik. <2>. Lehrbuch / Albrecht Möschwitzer ; Klaus Lunze

Halbleiterelektronik (Alle Bände)

4., bearb. Aufl, 1980

Signatur: YEM1161(4)-2

Halbleiterelektronik. <3>. Arbeitsbuch / Albrecht Möschwitzer

Halbleiterelektronik (Alle Bände)

1974

Signatur: YEM1161-3

Semiconductors. <1>. Group IV-elements and III-V-compounds

Semiconductors (Alle Bände), Data in science and technology : 1 (Alle Bände)

Madelung, Otfried[Herausgeber]

1991

Signatur: UIU3175-1

Point defects in semiconductors. 2. Experimental aspects

Point defects in semiconductors (Alle Bände), Springer series in solid-state sciences : 35 (Alle Bände)

1983

Signatur: UIM1288-35

Point defects in semiconductors. 1. Theoretical aspects

Point defects in semiconductors (Alle Bände), Springer series in solid state sciences : 22 (Alle Bände)

1981

Signatur: UIM1288-22

Defects in electronic materials. 1. Symposium held November 30 - December 3, 1987, Boston, Massachusetts, U.S.A

Defects in electronic materials (Alle Bände), ... : 104 (Alle Bände)

1988

Signatur: UAL6304-1

Halbleiterelektronik. <1>. Wissensspeicher / Albrecht Möschwitzer

Halbleiterelektronik (Alle Bände)

2., bearb. Aufl, 1975

Signatur: YEM1161(2)-1

Gallium nitride and related materials. 2. Symposium held April 1 - 4, 1997, San Francisco, California, USA

Gallium nitride and related materials (Alle Bände), Materials Research Society symposium proceedings : 468 (Alle Bände)

1997

Signatur: UIX1429-2

New developments in semiconductor physics : proceedings. 1. Proceedings of the International Summer School, held in Szeged, Hungary, July 1 - 6, 1979

New developments in semiconductor physics (Alle Bände), Lecture notes in physics : 122 (Alle Bände)

1980

Signatur: UIU2399

Proceedings of the International Conference on Defects in Semiconductors. 14. Paris, France, August 18-22, 1986, Pt. 3

Proceedings of the International Conference on Defects in Semiconductors (Alle Bände), Materials science forum : 10,12 (Alle Bände)

International Conference on Defects in Semiconductors

1986

Signatur: UAL6061-14,3

Proceedings of the International Conference on Defects in Semiconductors. 14. Paris, France, August 18-22, 1986, Pt. 1

Proceedings of the International Conference on Defects in Semiconductors (Alle Bände), Materials science forum : 10,12 (Alle Bände)

International Conference on Defects in Semiconductors

1986

Signatur: UAL6061-14,1

Proceedings of the ... International Conference on the Physics of Semiconductors. 14. Invited and contributed papers from the 14th International Conference on the Physics of Semiconductors held in Edinburgh, 4 - 8 September 1978

Proceedings of the ... International Conference on the Physics of Semiconductors (Alle Bände), Conference series / Institute of Physics : 43 (Alle Bände)

International Conference on the Physics of Semiconductors

1979

Signatur: UIU1694-14

Proceedings of the International Conference on Defects in Semiconductors. 14. Paris, France, August 18-22, 1986, Pt. 2

Proceedings of the International Conference on Defects in Semiconductors (Alle Bände), Materials science forum : 10,12 (Alle Bände)

International Conference on Defects in Semiconductors

1986

Signatur: UAL6061-14,2

Polycrystalline semiconductors. 2. Schwäbisch Hall, Fed. Rep. of Germany, July 30 - August 3, 1990

Polycrystalline semiconductors (Alle Bände), Springer proceedings in physics : 54 (Alle Bände)

1991

Signatur: UAL900429

Gallium arsenide and related compounds : contributed papers from the ... International Symposium on Gallium Arsenide and Related Compounds. 12. Held in Karuizawa, Japan, 23 - 26 Sept. 1985

Gallium arsenide and related compounds (Alle Bände), Conference series / Institute of Physics, London : 79 (Alle Bände)

1986

Signatur: UAL5659-12

Defects in electronic materials. 2. Symposium held December 2 - 6, 1996, Boston, Massachusetts, U.S.A

Defects in electronic materials (Alle Bände), ... : 442 (Alle Bände)

1997

Signatur: UAL6304-2

The electrical characterization of semiconductors. <1>. Measurement of minority carrier properties / J. W. Orton and P. Blood

The electrical characterization of semiconductors (Alle Bände), Techniques of physics : 13 (Alle Bände)

1990

Signatur: UIU3442-1

Rare earth doped semiconductors. 1. Symposium held April 13 - 15, 1993, San Francisco, California, USA

Rare earth doped semiconductors (Alle Bände), Materials Research Society symposium proceedings : 301 (Alle Bände)

1993

Signatur: UIU3646

Polycrystalline semiconductors

1989-

Semiconductors

Soviet physics

1967-

Zeitschriftenbestand: 1.1967 - 32.1998

Signatur: 67s17

The electrical characterization of semiconductors. <2>. Majority carriers and electron states / P. Blood and J. W. Orton

The electrical characterization of semiconductors (Alle Bände), Techniques of physics : 14 (Alle Bände)

1992

Signatur: UIU3442-2

Gallium arsenide and related compounds : contributed papers from the ... International Symposium on Gallium Arsenide and Related Compounds. 9. Held at Oiso, Japan, 20 - 23 Sept. 1981

Gallium arsenide and related compounds (Alle Bände), Conference series / Institute of Physics, London : 63 (Alle Bände)

1982

Signatur: UAL5659-9

Physics of narrow gap semiconductors : proceedings of the International Conference on Physics of Narrow Gap Semiconductors. 4. Linz, Austria, Sept. 14 - 17, 1981

Physics of narrow gap semiconductors (Alle Bände), Lecture notes in physics : 152 (Alle Bände)

1982

Signatur: UIU2161-4

Laser spectroscopy of solids. 2 / With contributions by D. D. Dlott

Laser spectroscopy of solids (Alle Bände), Topics in applied physics : 65 (Alle Bände)

1989

Signatur: UBX1065-65

Compound semiconductor [electronic resource]

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Enss, Christian
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Francis, Anthony H
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Hirn, Wolfgang
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Hoffmann, Frank
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Hunklinger, Siegfried
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Hutchison, J. L
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International Conference on the Physics of Semiconductors
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Halbleiterelektronik. <2>. Lehrbuch / Albrecht Möschwitzer ; Klaus Lunze

Halbleiterelektronik. <3>. Arbeitsbuch / Albrecht Möschwitzer

Semiconductors. <1>. Group IV-elements and III-V-compounds

Point defects in semiconductors. 2. Experimental aspects

Point defects in semiconductors. 1. Theoretical aspects

Defects in electronic materials. 1. Symposium held November 30 - December 3, 1987, Boston, Massachusetts, U.S.A

Halbleiterelektronik. <1>. Wissensspeicher / Albrecht Möschwitzer

Gallium nitride and related materials. 2. Symposium held April 1 - 4, 1997, San Francisco, California, USA

New developments in semiconductor physics : proceedings. 1. Proceedings of the International Summer School, held in Szeged, Hungary, July 1 - 6, 1979

Proceedings of the International Conference on Defects in Semiconductors. 14. Paris, France, August 18-22, 1986, Pt. 3

Proceedings of the International Conference on Defects in Semiconductors. 14. Paris, France, August 18-22, 1986, Pt. 1

Proceedings of the ... International Conference on the Physics of Semiconductors. 14. Invited and contributed papers from the 14th International Conference on the Physics of Semiconductors held in Edinburgh, 4 - 8 September 1978

Proceedings of the International Conference on Defects in Semiconductors. 14. Paris, France, August 18-22, 1986, Pt. 2

Polycrystalline semiconductors. 2. Schwäbisch Hall, Fed. Rep. of Germany, July 30 - August 3, 1990

Gallium arsenide and related compounds : contributed papers from the ... International Symposium on Gallium Arsenide and Related Compounds. 12. Held in Karuizawa, Japan, 23 - 26 Sept. 1985

Defects in electronic materials. 2. Symposium held December 2 - 6, 1996, Boston, Massachusetts, U.S.A

The electrical characterization of semiconductors. <1>. Measurement of minority carrier properties / J. W. Orton and P. Blood

Rare earth doped semiconductors. 1. Symposium held April 13 - 15, 1993, San Francisco, California, USA

Polycrystalline semiconductors

Semiconductors

The electrical characterization of semiconductors. <2>. Majority carriers and electron states / P. Blood and J. W. Orton

Gallium arsenide and related compounds : contributed papers from the ... International Symposium on Gallium Arsenide and Related Compounds. 9. Held at Oiso, Japan, 20 - 23 Sept. 1981

Physics of narrow gap semiconductors : proceedings of the International Conference on Physics of Narrow Gap Semiconductors. 4. Linz, Austria, Sept. 14 - 17, 1981

Laser spectroscopy of solids. 2 / With contributions by D. D. Dlott

Compound semiconductor [electronic resource]

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