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Properties of gallium arsenide

EMIS datareviews series : 2 (Alle Bände)

2. ed, 1990

Gallium arsenide and related compounds : contributed papers from the ... International Symposium on Gallium Arsenide and Related Compounds. 16. Karuizawa, Japan, 25 - 29 September 1989

Gallium arsenide and related compounds (Alle Bände), Conference series / The Institute of Physics, London and Bristol : 106 (Alle Bände)

1990

Signatur: UAL5659-16

Gallium arsenide and related compounds 1993 : proceedings of the Twentieth International Symposium on Gallium Arsenide and Related Compounds, Freiburg, Germany, 29 August - 2 September, 1993

Institute of Physics conference series : 136 (Alle Bände)

Rupprecht, Hans S[Herausgeber]

1994

Signatur: UAL5659-20

Gallium arsenide and related compounds : contributed papers from the ... International Symposium on Gallium Arsenide and Related Compounds. 11. Held in Biarritz, France, on 26 - 28 Sept. 1984

Gallium arsenide and related compounds (Alle Bände), Conference series / Institute of Physics : 74 (Alle Bände)

1985

Signatur: UAL5659-11

Properties of gallium arsenide

EMIS datareviews series : 16 (Alle Bände), An INSPEC publication

Brozel, Mike R[Herausgeber]

3. ed, 1996

Signatur: UIZ1364(3)

GaAs-Feldeffekttransistoren

Halbleiter-Elektronik : 16 (Alle Bände)

2., überarb. und erw. Aufl, 1989

Signatur: YEP2625(2)

GaAs FET principles and technology

Dilorenzo, James V[Herausgeber]

1982

Signatur: YEP2340

Semi-insulating III-V materials, Ixtapa, Mexico 1992 : proceedings of the 7th Conference on Semi-Insulating III-V Materials, Ixtapa, Mexico, 21 - 24 April 1992

Miner, Carla J[Herausgeber]

1993

Signatur: XVI921099

Die laterale Materialwanderung zwischen Elektroden und ihr Einfluß auf die Zuverlässigkeit planarer GaAs-Bauelemente

Fortschritt-Berichte VDI : Reihe 9 : 76 (Alle Bände)

Kretschmer, Karl-Heinz

Als Ms. gedr, 1988

Signatur: XVW2188-76

Gallium arsenide and related compounds : contributed papers from the ... International Symposium on Gallium Arsenide and Related Compounds. 12. Held in Karuizawa, Japan, 23 - 26 Sept. 1985

Gallium arsenide and related compounds (Alle Bände), Conference series / Institute of Physics, London : 79 (Alle Bände)

1986

Signatur: UAL5659-12

Gallium arsenide : materials, devices, and circuits

The Wiley series in solid state devices and circuits, A Wiley-Interscience publication

Howes, Michael J[Herausgeber]

1985

Signatur: UIU2810

GaAs integrated circuits

Mun, Joseph[Herausgeber]

1988

Signatur: YFB2378

MMIC design : GaAs FETs and HEMTs

The Artech House microwave library

Ladbrooke, Peter H

1989

Signatur: YFB2459

Electrical characterization of GaAs materials and devices

Design and measurement in electronic engineering

Look, David C

1989

Signatur: UIU3044

Theorie, Technologie und Untersuchung von Lawinenlaufzeitdioden aus MBE-GaAs für W-Band-Frequenzen

Eisele, Heribert

1989

Signatur: D5328

Applications of GaAs MESFETs

Soares, Robert[Herausgeber]

1983

Signatur: YEP2471

GaAs high speed devices : physics, technology and circuit applications

A Wiley-Interscience publication

1994

Signatur: UIU3696

Gallium arsenide technology in Europe

Research reports ESPRIT : Project Group Microelectronics : 1 (Alle Bände)

Mun, Joseph[Herausgeber]

1994

Signatur: YFB2695

Introduction to semiconductor technology : GaAs and related compounds

A Wiley-Interscience publication

Wang, Cheng T[Herausgeber]

1990

Signatur: UIU3345

Gallium arsenide and related compounds : contributed papers from the ... International Symposium on Gallium Arsenide and Related Compounds. 9. Held at Oiso, Japan, 20 - 23 Sept. 1981

Gallium arsenide and related compounds (Alle Bände), Conference series / Institute of Physics, London : 63 (Alle Bände)

1982

Signatur: UAL5659-9

Herstellung und Untersuchung der elektronischen Eigenschaften des GaAs-Dotierungsuebergitters

Künzel, Harald

1981

Signatur: DQ507

Untersuchungen des Elektronentransports in Ge-GaAs-Heterostrukturen

Dahmen, Michael

1993

Signatur: D8646

Untersuchung struktureller Defekte in GaAs mit Röntgen-Kleinwinkelstreuung unter Anwendung der Streukontrastvariation

Berichte des Forschungszentrums Jülich : 2851 (Alle Bände)

Gebhardt, Roman

1993

Signatur: MQ4412

GaAs MESFET circuit design

The Artech House materials science library

Soares, Robert[Herausgeber]

2. [Dr.], 1988

Signatur: YCI1422

Gallium arsenide and related compounds : contributed papers from the ... International Symposium on Gallium Arsenide and Related Compounds. 15. Held in Atlanta, Georgia, 11 - 14 September 1988

Gallium arsenide and related compounds (Alle Bände), Institute of Physics conference series : 96 (Alle Bände)

1989

Signatur: UAL5659-15

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Properties of gallium arsenide

Gallium arsenide and related compounds : contributed papers from the ... International Symposium on Gallium Arsenide and Related Compounds. 16. Karuizawa, Japan, 25 - 29 September 1989

Gallium arsenide and related compounds 1993 : proceedings of the Twentieth International Symposium on Gallium Arsenide and Related Compounds, Freiburg, Germany, 29 August - 2 September, 1993

Gallium arsenide and related compounds : contributed papers from the ... International Symposium on Gallium Arsenide and Related Compounds. 11. Held in Biarritz, France, on 26 - 28 Sept. 1984

Properties of gallium arsenide

GaAs-Feldeffekttransistoren

GaAs FET principles and technology

Semi-insulating III-V materials, Ixtapa, Mexico 1992 : proceedings of the 7th Conference on Semi-Insulating III-V Materials, Ixtapa, Mexico, 21 - 24 April 1992

Die laterale Materialwanderung zwischen Elektroden und ihr Einfluß auf die Zuverlässigkeit planarer GaAs-Bauelemente

Gallium arsenide and related compounds : contributed papers from the ... International Symposium on Gallium Arsenide and Related Compounds. 12. Held in Karuizawa, Japan, 23 - 26 Sept. 1985

Gallium arsenide : materials, devices, and circuits

GaAs integrated circuits

MMIC design : GaAs FETs and HEMTs

Electrical characterization of GaAs materials and devices

Theorie, Technologie und Untersuchung von Lawinenlaufzeitdioden aus MBE-GaAs für W-Band-Frequenzen

Applications of GaAs MESFETs

GaAs high speed devices : physics, technology and circuit applications

Gallium arsenide technology in Europe

Introduction to semiconductor technology : GaAs and related compounds

Gallium arsenide and related compounds : contributed papers from the ... International Symposium on Gallium Arsenide and Related Compounds. 9. Held at Oiso, Japan, 20 - 23 Sept. 1981

Herstellung und Untersuchung der elektronischen Eigenschaften des GaAs-Dotierungsuebergitters

Untersuchungen des Elektronentransports in Ge-GaAs-Heterostrukturen

Untersuchung struktureller Defekte in GaAs mit Röntgen-Kleinwinkelstreuung unter Anwendung der Streukontrastvariation

GaAs MESFET circuit design

Gallium arsenide and related compounds : contributed papers from the ... International Symposium on Gallium Arsenide and Related Compounds. 15. Held in Atlanta, Georgia, 11 - 14 September 1988

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