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Details

Autor(en) / Beteiligte
Titel
Advanced plasma technology
Ort / Verlag
Weinheim, Germany : Wiley-VCH Verlag GmbH & Co. KGaA,
Erscheinungsjahr
2008
Link zum Volltext
Beschreibungen/Notizen
  • Description based upon print version of record.
  • Includes bibliographical references at the end of each chaptes and index.
  • Advanced Plasma Technology; Contents; Preface; List of Contributors; 1 Basic Approaches to Plasma Production and Control; 1.1 Plasma Production; 1.1.1 Under Low Gas Pressure (10 torr); 1.2 Energy Control; 1.2.1 Electron-Temperature Control; 1.2.2 Ion-Energy Control; 1.3 Dust Collection and Removal; References; 2 Plasma Sources and Reactor Configurations; 2.1 Introduction; 2.2 Characteristics of ICP; 2.2.1 Principle; 2.2.2 Transformer Model; 2.2.3 Technological Aspects; 2.2.3.1 Matching
  • 2.2.3.2 Capacitive Coupling2.2.3.3 Standing Wave Effects; 2.3 Sources and Reactor Configuration; 2.3.1 Substrate Shape; 2.3.1.1 Flat Substrates; 2.3.1.2 Complex Three-Dimensional Shapes; 2.3.1.3 Large Area Treatment; 2.4 Conclusions; References; 3 Advanced Simulations for Industrial Plasma Applications; 3.1 Introduction; 3.2 PIC Simulations; 3.2.1 Capacitively Coupled O(2)/Ar Plasmas; 3.2.1.1 Gas Composition; 3.2.1.2 Pressure Effect in Ar/O(2) Plasmas; 3.2.2 Three-Dimensional (3D) Charge-up Simulation; 3.2.2.1 Description of 3D Charge-up Simulations
  • 3.2.2.2 Effects of Secondary Electron Emission3.2.2.3 Negative Ion Extraction; 3.3 Fluid Simulations; 3.3.1 Capacitively Coupled Discharges; 3.3.2 Large Area Plasma Source; 3.4 Summary; References; 4 Modeling and Diagnostics of He Discharges for Treatment of Polymers; 4.1 Introduction; 4.2 Experimental; 4.3 Model Description; 4.4 Results and Discussion; 4.4.1 Electrical Properties; 4.4.2 Gas-Phase Chemistry; 4.4.3 Plasma-Surface Interactions; 4.5 Conclusions; References; 5 Three-Dimensional Modeling of Thermal Plasmas (RF and Transferred Arc) for the Design of Sources and Industrial Processes
  • 5.1 Introduction5.2 Inductively Coupled Plasma Torches; 5.2.1 Modeling Approach; 5.2.1.1 Modeling Assumptions; 5.2.1.2 Governing Equations of the Continuum Phase; 5.2.1.3 Governing Equations of the Discrete Phase; 5.2.1.4 Computational Domain and Boundary Conditions; 5.2.2 Selected Simulation Results; 5.2.2.1 High-Definition Numerical Simulation of Industrial ICPTs; 5.2.2.2 Numerical Simulation of the Trajectories and Thermal Histories of Powders Injected in Industrial ICPTs; 5.3 DC Transferred Arc Plasma Torches; 5.3.1 Modeling Approach; 5.3.1.1 Modeling Assumptions
  • 5.3.1.2 Governing Equations5.3.1.3 Computational Domain and Boundary Conditions; 5.3.2 Selected Simulation Results; 5.3.2.1 Magnetically Deflected Transferred Arc; 5.3.2.2 The Twin Torch; 5.3.2.3 The Cutting Torch; References; 6 Radiofrequency Plasma Sources for Semiconductor Processing; 6.1 Introduction; 6.2 Capacitively Coupled Plasmas; 6.2.1 Dual-Frequency CCPs; 6.3 Inductively Coupled Plasmas; 6.3.1 General Description; 6.3.2 Anomalous Skin Depth; 6.3.3 Magnetized ICPs; 6.4 Helicon Wave Sources; 6.4.1 General Description; 6.4.2 Unusual Features; 6.4.3 Extended Helicon Sources; References
  • 7 Advanced Plasma Diagnostics for Thin-Film Deposition
  • A panel of internationally renowned scientists discuss the latest results in plasma technology. This volume has been compiled with both a didactic approach and an overview of the newest achievements for industrial applications. It is divided into two main sections. One is focused on fundamental technology, including plasma production and control, high-pressure discharges, modeling and simulation, diagnostics, dust control, and etching. The section on application technology covers polymer treatments, silicon solar cell, coating and spray, biomaterials, sterilization and waste treatment, plasma
  • English
  • Description based on print version record.
Sprache
Englisch
Identifikatoren
ISBN: 1-281-94675-3, 9786611946753, 3-527-62218-7, 3-527-62219-5
OCLC-Nummer: 264615338
Titel-ID: 9925038265806463
Format
1 online resource (481 p.)
Schlagworte
Plasma engineering