Sie befinden Sich nicht im Netzwerk der Universität Paderborn. Der Zugriff auf elektronische Ressourcen ist gegebenenfalls nur via VPN oder Shibboleth (DFN-AAI) möglich. mehr Informationen...
Ergebnis 21 von 974

Details

Autor(en) / Beteiligte
Titel
Vacuum nanoelectronic devices : novel electron sources and applications
Ort / Verlag
West Sussex, England : Wiley,
Erscheinungsjahr
2015
Link zum Volltext
Beschreibungen/Notizen
  • Description based upon print version of record.
  • Includes bibliographical references at the end of each chapters and index.
  • ""Cover""; ""Table of Contents""; ""Title Page""; ""Copyright""; ""Preface""; ""Part One: Theoretical Backgrounds of Quantum Electron Sources""; ""Chapter 1: Transport through the Energy Barriers: Transition Probability""; ""1.1 Transfer Matrix Technique""; ""1.2 Tunneling through the Barriers and Wells""; ""1.3 Tunneling through Triangular Barrier at Electron Field Emission""; ""1.4 Effect of Trapped Charge in the Barrier""; ""1.5 Transmission Probability in Resonant Tunneling Structures: Coherent Tunneling""; ""1.6 Lorentzian Approximation""; ""1.7 Time Parameters of Resonant Tunneling""
  • ""1.8 Transmission Probability at Electric Fields""""1.9 Temperature Effects""; ""References""; ""Chapter 2: Supply Function""; ""2.1 Effective Mass Approximation""; ""2.2 Electron in Potential Box""; ""2.3 Density of States""; ""2.4 Fermi Distribution Function and Electron Concentration""; ""2.5 Supply Function at Electron Field Emission""; ""2.6 Electron in Potential Well""; ""2.7 Two-Dimensional Electron Gas in Heterojunction GaN-AlGaN""; ""2.8 Electron Properties of Quantum-Size Semiconductor Films""; ""References""; ""Chapter 3: Band Bending and Work Function""
  • ""3.1 Surface Space-Charge Region""""3.2 Quantization of the Energy Spectrum of Electrons in Surface Semiconductor Layer""; ""3.3 Image Charge Potential""; ""3.4 Work Function""; ""3.5 Field and Temperature Dependences of Barrier Height""; ""3.6 Influence of Surface Adatoms on Work Function""; ""References""; ""Chapter 4: Current through the Barrier Structures""; ""4.1 Current through One Barrier Structure""; ""4.2 Field Emission Current""; ""4.3 Electron Field Emission from Semiconductors""; ""4.4 Current through Double Barrier Structures""
  • ""4.5 Electron Field Emission from Multilayer Nanostructures and Nanoparticles""""References""; ""Chapter 5: Electron Energy Distribution""; ""5.1 Theory of Electron Energy Distribution""; ""5.2 Experimental Set Up""; ""5.3 Peculiarities of Electron Energy Distribution Spectra at Emission from Semiconductors""; ""5.4 Electron Energy Distribution at Emission from Spindt-Type Metal Microtips""; ""5.5 Electron Energy Distribution of Electrons Emitter from Silicon""; ""References""; ""Part Two: Novel Electron Sources with Quantum Effects""; ""Chapter 6: Si Based Quantum Cathodes""
  • ""6.1 Introduction""""6.2 Electron Field Emission from Porous Silicon""; ""6.3 Electron Field Emission from Silicon with Multilayer Coating""; ""6.4 Peculiarities of Electron Field Emission from Si Nanoparticles""; ""6.5 Formation of Conducting Channels in SiOx Coating Film""; ""6.6 Electron Field Emission from Si Nanowires""; ""6.7 Metal-Insulator-Metal Emitters""; ""6.8 Conclusion""; ""References""; ""Chapter 7: GaN Based Quantum Cathodes""; ""7.1 Introduction""; ""7.2 Electron Sources with Wide Bandgap Semiconductor Films""
  • ""7.3 Resonant Tunneling of Field Emitted Electrons through Nanostructured Cathodes""
  • Introducing up-to-date coverage of research in electron field emission from nanostructures, Vacuum Nanoelectronic Devices outlines the physics of quantum nanostructures, basic principles of electron field emission, and vacuum nanoelectronic devices operation, and offers as insight state-of-the-art and future researches and developments. This book also evaluates the results of research and development of novel quantum electron sources that will determine the future development of vacuum nanoelectronics. Further to this, the influence of quantum mechanical effects on high frequency vacuum
  • English
  • Description based on print version record.
Sprache
Englisch
Identifikatoren
ISBN: 1-119-03796-4, 1-119-03797-2, 1-119-03798-0
OCLC-Nummer: 916953777
Titel-ID: 9925037800006463
Format
1 online resource (1140 p.)
Schlagworte
Vacuum microelectronics, Electrons, Quantum electronics, Tunneling (Physics)