Details

Autor(en) / Beteiligte

• Szweda, Roy

Titel

Gallium nitride & related wide bandgap materials & devices : a market and technology overview 1998-2003 [electronic resource]

Auflage

2nd ed

Link zum Volltext

• Elsevier Books AutoHoldings

Beschreibungen/Notizen

• Description based upon print version of record.
• Front Cover; Gallium Nitride & Related Wide Bandgap Materials & Devices; Copyright Page; Contents; List of Tables; List of Figures; Chapter 1. Introduction; 1.1 Report Methodology; 1.2 Executive Summary; Chapter 2. Market Forecasts 1998-2003; 2.1 Introduction; 2.2 Expansion of the Wide Bandgap Device; 2.3 Optoelectronic Devices; 2.4 Wide Bandgap LEDs as a Fraction of the Total LED Market; 2.5 Blue-Green LEDs; 2.6 White LEDs; 2.7 UV-LEDs; 2.8 Violet Diode Lasers; 2.9 Detector Devices; 2.10 Electronic Devices; 2.11 The Competitive Marketplace for Wide Bandgap Semiconductors
• 2.12 The Future for Companies in the Wide Bandgap Semiconductor MarketplaceChapter 3. Applications Market Overview; 3.1 Introduction; 3.2 Worldwide Market for Wide Bandgap Semiconductors; 3.3 The Wide Bandgap Semiconductor Device Business; 3.4 Automotive Markets for Wide Bandgap Semiconductor Devices; 3.5 Industrial Markets for Wide Bandgap Semiconductor Devices; 3.6 Computer Markets for Wide Bandgap Semiconductor Devices; 3.7 Military and Aerospace Markets for Wide Bandgap Semiconductor Devices; 3.8 Communications Markets for Wide Bandgap Semiconductor Devices
• 3.9 Other Markets for Wide Bandgap Semiconductor DevicesChapter 4. Materials Technology Overview; 4.1 Introduction; 4.2 Wide Bandgap Materials; 4.3 The Nitrides; 4.4 Gallium Nitride; 4.5 Silicon Carbide; 4.6 II-VIs; 4.7 Diamond; 4.8 Polymeric Materials; Chapter 5. Crystal Growth and Processing of Wide Bandgap Semiconductors; 5.1 Introduction; 5.2. Crystal Growth; 5.3 Dissimilar Substrates; 5.4 ELOG; 5.5 Epitaxial Growth; 5.6 Growth Enhancements; 5.7 In-Situ Monitoring; 5.8 Alternative Fabrication Processes; 5.9 Device Processing; 5.10 Etching of Wide Bandgap Semiconductors
• 5.11 Packaging of Wide Bandgap SemiconductorsChapter 6. Research Collaborations; Chapter 7. Company Profiles; 7.1 Introduction; Chapter 8. Geographical List of Universities and Selected Industrial Laboratories Involved in Research; 8.1 Introduction; 8.2 Australia; 8.3 Belgium; 8.4 Canada; 8.5 China; 8.6 Denmark; 8.7 Finland; 8.8 France; 8.9 Germany; 8.10 Greece; 8.11 India; 8.12 Ireland; 8.13 Israel; 8.14 Italy; 8.15 Japan; 8.16 Korea; 8.17 The Netherlands; 8.18 Norway; 8.19 Poland; 8.20 Russia; 8.21 Singapore; 8.22 South Africa; 8.23 Spain; 8.24 Sweden; 8.25 Switzerland; 8.26 Taiwan; 8.27 UK
• 8.28 USAChapter 9. Directory of Leading Suppliers; Chapter 10. Appendices; 10.1 Acronyms; 10.2 Selected Bibliography; 10.3 Exchange Rates Against the US (Annual Average)
• The second edition of Gallium Nitride & Related Wide Bandgap Materials and Devices provides a detailed insight into the global developments in GaN, SiC and other optoelectronic materials. This report also examines the implication for both suppliers and users of GaN technology. For a PDF version of the report please call Tina Enright on +44 (0) 1865 843008 for price details.
• English