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A Novel High-Breakdown-Voltage SOI MESFET by Modified Charge Distribution

IEEE transactions on electron devices, 2012-05, Vol.59 (5), p.1255-1262

2012

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Two-Dimensional Numerical Simulation of Bottom-Gate and Dual-Gate Amorphous In-Ga-Zn-O MESFETs

IEEE electron device letters, 2014-01, Vol.35 (1), p.75-77

2014

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32 dBm Power Amplifier on 45 nm SOI CMOS

IEEE microwave and wireless components letters, 2013-03, Vol.23 (3), p.161-163

2013

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Realization of Unidirectional Planar GaAs Nanowires on GaAs (110) Substrates

IEEE electron device letters, 2012-04, Vol.33 (4), p.522-524

2012

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High-Voltage and RF Performance of SOI MESFET Using Controlled Electric Field Distribution

IEEE transactions on electron devices, 2012-10, Vol.59 (10), p.2842-2845

2012

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Comparison of ZnO-Based JFET, MESFET, and MISFET

IEEE transactions on electron devices, 2013-06, Vol.60 (6), p.1828-1833

2013

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Persistent Current Reduction in Metal-Semiconductor FETs With a ZnCoO Channel in an External Magnetic Field

IEEE electron device letters, 2013-10, Vol.34 (10), p.1271-1273

2013

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Scaling SOI MESFETs to 150-nm CMOS Technologies

IEEE transactions on electron devices, 2011-06, Vol.58 (6), p.1628-1634

2011

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Electrical Characteristics of GaAs Nanowire-Based MESFETs on Flexible Plastics

IEEE transactions on electron devices, 2011-04, Vol.58 (4), p.1096-1101

2011

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Volltext

SOI MESFETs Fabricated Using Fully Depleted CMOS Technologies

IEEE electron device letters, 2009-06, Vol.30 (6), p.678-680

2009

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A comprehensive model of frequency dispersion in 4H–SiC MESFET

Solid-state electronics, 2009-03, Vol.53 (3), p.285-291

2009

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An Optimized Scalable BSIM Macromodel for HV Double-Diffused Drain MOSFET I-V Characteristics

IEEE transactions on power electronics, 2008-03, Vol.23 (2), p.1027-1030

2008

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Heat-spreading diamond films for GaN-based high-power transistor devices

Diamond and related materials, 2001-03, Vol.10 (3), p.744-749

2001

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An Improved Model for GaAs MESFETs Suitable for a Wide Bias Range

IEEE microwave and wireless components letters, 2007-01, Vol.17 (1), p.52-54

2007

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Noise behavior of an optically controlled GaAs MESFET

Journal of lightwave technology, 2004-02, Vol.22 (2), p.534-542

2004

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Influence of Si3N4 passivation on surface trapping in SiC metal-semiconductor field-effect transistors

Journal of electronic materials, 2004-08, Vol.33 (8), p.908-911

2004

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Monte Carlo simulation of vertical MESFETs in 2H, 4H and 6H-SiC

Diamond and related materials, 2001-03, Vol.10 (3), p.1283-1286

2001

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GaAs metal-semiconductor field effect transistor with InGaP/GaAs multiquantum barrier buffer layer

Materials science & engineering. B, Solid-state materials for advanced technology, 2000-05, Vol.74 (1), p.147-150

2000

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Integration of semiconductor devices with surface acoustic wave using the epitaxial lift-off process

Japanese Journal of Applied Physics, 1997-05, Vol.36 (5B), p.3109-3114

1997

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Symptoms of stress-induced gain degradation in power MESFETs

Journal of electronic materials, 1998-07, Vol.27 (7), p.826-828

1998

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A silicon-on-insulator metal–semiconductor field-effect transistor with an L-shaped buried oxide for high output-power density

Materials science in semiconductor processing, 2014-03, Vol.19, p.124-129

2014

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A Novel High-Breakdown-Voltage SOI MESFET by Modified Charge Distribution

Two-Dimensional Numerical Simulation of Bottom-Gate and Dual-Gate Amorphous In-Ga-Zn-O MESFETs

32 dBm Power Amplifier on 45 nm SOI CMOS

Realization of Unidirectional Planar GaAs Nanowires on GaAs (110) Substrates

High-Voltage and RF Performance of SOI MESFET Using Controlled Electric Field Distribution

Comparison of ZnO-Based JFET, MESFET, and MISFET

Persistent Current Reduction in Metal-Semiconductor FETs With a ZnCoO Channel in an External Magnetic Field

Scaling SOI MESFETs to 150-nm CMOS Technologies

Electrical Characteristics of GaAs Nanowire-Based MESFETs on Flexible Plastics

SOI MESFETs Fabricated Using Fully Depleted CMOS Technologies

A comprehensive model of frequency dispersion in 4H–SiC MESFET

An Optimized Scalable BSIM Macromodel for HV Double-Diffused Drain MOSFET I-V Characteristics

Heat-spreading diamond films for GaN-based high-power transistor devices

An Improved Model for GaAs MESFETs Suitable for a Wide Bias Range

Noise behavior of an optically controlled GaAs MESFET

Influence of Si3N4 passivation on surface trapping in SiC metal-semiconductor field-effect transistors

Monte Carlo simulation of vertical MESFETs in 2H, 4H and 6H-SiC

GaAs metal-semiconductor field effect transistor with InGaP/GaAs multiquantum barrier buffer layer

Integration of semiconductor devices with surface acoustic wave using the epitaxial lift-off process

Symptoms of stress-induced gain degradation in power MESFETs

A silicon-on-insulator metal–semiconductor field-effect transistor with an L-shaped buried oxide for high output-power density

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