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MoOx/Au Schottky‐Gated Field‐Effect Transistors and Their Fast Inverters

Advanced electronic materials, 2019-08, Vol.5 (8), p.n/a

2019

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Doping the Undopable: Hybrid Molecular Beam Epitaxy Growth, n‑Type Doping, and Field-Effect Transistor Using CaSnO3

ACS nano, 2023-09, Vol.17 (17), p.16912-16922

2023

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A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region

Micromachines (Basel), 2021-04, Vol.12 (5), p.488

2021

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Negative resistance amplifier circuit using GaAsFET modelled single MESFET

Telkomnika, 2020-02, Vol.18 (1), p.179-190

2020

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A Novel SOI MESFET to Improve the Equipotential Contour Distributions by Using an Oxide Barrier

SILICON, 2019-04, Vol.11 (2), p.879-889

2019

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The Silicon Plates in Buried Oxide for Enhancement of the Breakdown Voltage in SOI MESFET

Applied Mechanics and Materials, 2014-04, Vol.538 (Mechanical, Electronic and Engineering Technologies (ICMEET 2014)), p.58-61

2014

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An Optimized Scalable BSIM Macromodel for HV Double-Diffused Drain MOSFET - Characteristics

IEEE transactions on power electronics, 2008-03, Vol.23 (2), p.1027-1030

2008

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Increase in the scattering of electric field lines in a new high voltage SOI MESFET

Superlattices and microstructures, 2016-09, Vol.97, p.15-27

Anvarifard, Mohammad K.

2016

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Heat-spreading diamond films for GaN-based high-power transistor devices

Diamond and related materials, 2001-03, Vol.10 (3), p.744-749

2001

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A novel SOI MESFET by reducing the electric field crowding for high voltage applications

Superlattices and microstructures, 2014-08, Vol.72, p.11-24

2014

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MBE Growth and Device Applications of Ga2O3

Molecular Beam Epitaxy, 2019, p.411-422

1, 2019

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Monte Carlo simulation of vertical MESFETs in 2H, 4H and 6H-SiC

Diamond and related materials, 2001-03, Vol.10 (3), p.1283-1286

2001

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Microwave Semiconductors Devices: Oscillators, Amplifiers, and Circuit

Microwave, Radar & RF Engineering, 2018, p.193-270

Chaturvedi, Prakash Kumar

2018

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GaAs metal-semiconductor field effect transistor with InGaP/GaAs multiquantum barrier buffer layer

Materials science & engineering. B, Solid-state materials for advanced technology, 2000-05, Vol.74 (1), p.147-150

2000

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Improvement of Microwave Performance for Metal-Semiconductor Field Effect Transistors Fabricated on a GaAs/Si Substrate with a Resistive Layer at GaAs–Si Interface

Japanese Journal of Applied Physics, 1999-05, Vol.38 (Part 1, No. 5A), p.2704-2706

1999

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Reliability of GaAs Metal-Semiconductor Field Effect Transistors Grown on Si Substrates

Japanese Journal of Applied Physics, 1998, Vol.37 (Part 1, No. 6A), p.3205-3209

1998

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Photovoltage and channel conductance analysis of buried gate MESFET with modulation frequency

Recent Advances in Space Technology Services and Climate Change 2010 (RSTS & CC-2010), 2010, p.293-297

2010

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Integration of semiconductor devices with surface acoustic wave using the epitaxial lift-off process

Japanese Journal of Applied Physics, 1997-05, Vol.36 (5B), p.3109-3114

1997

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Device Physics, Modeling, Technology, and Analysis for Silicon MESFET

1st ed. 2019., 2019

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New 4H silicon carbide metal semiconductor field-effect transistor with a buffer layer between the gate and the channel layer

Chinese physics B, 2012, Vol.21 (1), p.419-425

张现军杨银堂段宝兴陈斌柴常春宋坤

2012

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Effects of gate-buffer combined with a p-type spacer structure on silicon carbide metal-semiconductor field-effect transistors

Chinese physics B, 2012, Vol.21 (1), p.426-432

宋坤柴常春杨银堂陈斌张现军马振洋

2012

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Improved performance of 4H-SiC metal-semiconductor field-effect transistors with step p-buffer layer

Chinese physics B, 2011, Vol.20 (1), p.584-588

邓小川张波张有润王易李肇基

2011

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Neutron radiation effect on 4H-SiC MESFETs and SBDs

Journal of semiconductors, 2010-11, Vol.31 (11), p.29-32

2010

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Model and analysis of drain induced barrier lowering effect for 4H-SiC metal semiconductor field effect transistor

Chinese physics B, 2009-10, Vol.18 (10), p.4456-4459, Article 4456

2009

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An Analytical Model of Drain Induced Barrier Lowering Effect for SiC MESFETs

Extended Abstracts - 2008 8th International Workshop on Junction Technology (IWJT '08), 2008, p.111-113

2008

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MoOx/Au Schottky‐Gated Field‐Effect Transistors and Their Fast Inverters

Doping the Undopable: Hybrid Molecular Beam Epitaxy Growth, n‑Type Doping, and Field-Effect Transistor Using CaSnO3

A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region

Negative resistance amplifier circuit using GaAsFET modelled single MESFET

A Novel SOI MESFET to Improve the Equipotential Contour Distributions by Using an Oxide Barrier

The Silicon Plates in Buried Oxide for Enhancement of the Breakdown Voltage in SOI MESFET

An Optimized Scalable BSIM Macromodel for HV Double-Diffused Drain MOSFET - Characteristics

Increase in the scattering of electric field lines in a new high voltage SOI MESFET

Heat-spreading diamond films for GaN-based high-power transistor devices

A novel SOI MESFET by reducing the electric field crowding for high voltage applications

MBE Growth and Device Applications of Ga2O3

Monte Carlo simulation of vertical MESFETs in 2H, 4H and 6H-SiC

Microwave Semiconductors Devices: Oscillators, Amplifiers, and Circuit

GaAs metal-semiconductor field effect transistor with InGaP/GaAs multiquantum barrier buffer layer

Improvement of Microwave Performance for Metal-Semiconductor Field Effect Transistors Fabricated on a GaAs/Si Substrate with a Resistive Layer at GaAs–Si Interface

Reliability of GaAs Metal-Semiconductor Field Effect Transistors Grown on Si Substrates

Photovoltage and channel conductance analysis of buried gate MESFET with modulation frequency

Integration of semiconductor devices with surface acoustic wave using the epitaxial lift-off process

Device Physics, Modeling, Technology, and Analysis for Silicon MESFET

New 4H silicon carbide metal semiconductor field-effect transistor with a buffer layer between the gate and the channel layer

Effects of gate-buffer combined with a p-type spacer structure on silicon carbide metal-semiconductor field-effect transistors

Improved performance of 4H-SiC metal-semiconductor field-effect transistors with step p-buffer layer

Neutron radiation effect on 4H-SiC MESFETs and SBDs

Model and analysis of drain induced barrier lowering effect for 4H-SiC metal semiconductor field effect transistor

An Analytical Model of Drain Induced Barrier Lowering Effect for SiC MESFETs

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