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Hot-Carrier acceleration factors for low power management in DC-AC stressed 40nm NMOS node at high temperature

2009 IEEE International Reliability Physics Symposium, 2009, p.531-548

2009

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IEEE_Xplore

A Compact Analytical Threshold-Voltage Model for Surrounding-Gate MOSFETs With Interface Trapped Charges

IEEE electron device letters, 2010-08, Vol.31 (8), p.788-790

Chiang Te-Kuang

2010

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IEEE_Xplore

Convergence of Hot-Carrier-Induced Saturation Region Drain Current and On-Resistance Degradation in Drain Extended MOS Transistors

IEEE transactions on electron devices, 2009-11, Vol.56 (11), p.2843-2847

2009

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IEEE_Xplore

A Model for Predicting On-Current Degradation Caused by Drain-Avalanche Hot Carriers in Low-Temperature Polysilicon Thin-Film Transistors

IEEE transactions on electron devices, 2009-01, Vol.56 (1), p.109-115

2009

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IEEE_Xplore

Reliability of high performance standard two-edge and radiation hardened by design enclosed geometry transistors

2009 IEEE International Reliability Physics Symposium, 2009, p.174-179

2009

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IEEE_Xplore

Self-Curable Gate-All-Around MOSFETs Using Electrical Annealing to Repair Degradation Induced From Hot-Carrier Injection

IEEE transactions on electron devices, 2016-03, Vol.63 (3), p.910-915

2016

Link zum Volltext
IEEE_Xplore

A Compact Model for Threshold Voltage of Surrounding-Gate MOSFETs With Localized Interface Trapped Charges

IEEE transactions on electron devices, 2011-02, Vol.58 (2), p.567-571

CHIANG, Te-Kuang

2011

Link zum Volltext
IEEE_Xplore

On the Design and Optimization of Three-Terminal Light-Emitting Device in Silicon CMOS Technology

IEEE journal of selected topics in quantum electronics, 2014-07, Vol.20 (4), p.232-239

Xu, Kaikai

2014

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IEEE_Xplore

Study of localized tunnel oxide degradation after hot carrier stressing using a novel mid-bandgap voltage characterization method

2009 IEEE International Reliability Physics Symposium, 2009, p.294-300

2009

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IEEE_Xplore

Hot carrier effects in trench-based integrated power transistors

2009 IEEE International Reliability Physics Symposium, 2009, p.416-420

2009

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IEEE_Xplore

Hot carrier stress degradation modes in p-type high voltage LDMOS transistors

2009 IEEE International Reliability Physics Symposium, 2009, p.426-431

2009

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IEEE_Xplore

A comprehensive study of hot carrier stress-induced drain leakage current degradation in thin-oxide n-MOSFETs

IEEE transactions on electron devices, 1999-09, Vol.46 (9), p.1877-1882

1999

Link zum Volltext
IEEE_Xplore

Hot-Carrier Photoemission in Scaled CMOS Technologies: A Challenge for Emission Based Testing and Diagnostics

2006 IEEE International Reliability Physics Symposium Proceedings, 2006, p.595-601

2006

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IEEE_Xplore

Ab initio Self-consistent GW Calculations in Non-Equilibrium Devices: Auger Recombination and Electron-Electron Scattering

2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2023, p.297-300

2023

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A new approach to evaluation of hot-carrier lifetime of ring oscillator (RO)

IEEE transactions on electron devices, 2002-09, Vol.49 (9), p.1672-1674

2002

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IEEE_Xplore

Electron trapping and interface trap generation in drain extended PMOS transistors

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual, 2005, p.555-559

2005

Link zum Volltext
IEEE_Xplore

Accurate lifetime prediction for channel hot carrier stress on sub-1 nm equivalent oxide thickness HK/MG nMOSFET with thin titanium nitride capping layer

Microelectronics and reliability, 2016-07, Vol.62, p.70-73

2016

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Verfügbarkeit prüfen

The energy driven paradigm of NMOSFET hot carrier effects

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual, 2005, p.708-709

2005

Link zum Volltext
IEEE_Xplore

Avalanche breakdown evolution under hot-carrier stress: a new microscopic simulation approach applied to a vertical power MOSFET

Journal of computational electronics, 2018-09, Vol.17 (3), p.1249-1256

2018

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Verfügbarkeit prüfen

Investigation of hot carrier effects in n-MOSFETs thick oxide with HfSiON and SiON gate dielectrics

2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual, 2007, p.622-623

2007

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IEEE_Xplore

A Defect-Centric perspective on channel hot carrier variability in nMOSFETs

Microelectronic engineering, 2015-11, Vol.147, p.72-74

2015

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Verfügbarkeit prüfen

Voltage dependences of parameter drifts in hot carrier degradation for n-channel LDMOS transistors

Microelectronic engineering, 2013-09, Vol.109, p.101-104

2013

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Electron-electron interaction signature peak in the substrate current versus gate voltage characteristics of n-channel silicon MOSFETs

IEEE transactions on electron devices, 2002-07, Vol.49 (7), p.1283-1288

2002

Link zum Volltext
IEEE_Xplore

Hot carrier effects in n-channel polycrystalline silicon thin-film transistors: a correlation between off-current and transconductance variations

IEEE transactions on electron devices, 1994-03, Vol.41 (3), p.340-346

1994

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IEEE_Xplore

Combined effect of NBTI and channel hot carrier effects in pMOSFETs

2005 IEEE International Integrated Reliability Workshop, 2005, p.7 pp.

2005

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IEEE_Xplore

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Hot-Carrier acceleration factors for low power management in DC-AC stressed 40nm NMOS node at high temperature

A Compact Analytical Threshold-Voltage Model for Surrounding-Gate MOSFETs With Interface Trapped Charges

Convergence of Hot-Carrier-Induced Saturation Region Drain Current and On-Resistance Degradation in Drain Extended MOS Transistors

A Model for Predicting On-Current Degradation Caused by Drain-Avalanche Hot Carriers in Low-Temperature Polysilicon Thin-Film Transistors

Reliability of high performance standard two-edge and radiation hardened by design enclosed geometry transistors

Self-Curable Gate-All-Around MOSFETs Using Electrical Annealing to Repair Degradation Induced From Hot-Carrier Injection

A Compact Model for Threshold Voltage of Surrounding-Gate MOSFETs With Localized Interface Trapped Charges

On the Design and Optimization of Three-Terminal Light-Emitting Device in Silicon CMOS Technology

Study of localized tunnel oxide degradation after hot carrier stressing using a novel mid-bandgap voltage characterization method

Hot carrier effects in trench-based integrated power transistors

Hot carrier stress degradation modes in p-type high voltage LDMOS transistors

A comprehensive study of hot carrier stress-induced drain leakage current degradation in thin-oxide n-MOSFETs

Hot-Carrier Photoemission in Scaled CMOS Technologies: A Challenge for Emission Based Testing and Diagnostics

Ab initio Self-consistent GW Calculations in Non-Equilibrium Devices: Auger Recombination and Electron-Electron Scattering

A new approach to evaluation of hot-carrier lifetime of ring oscillator (RO)

Electron trapping and interface trap generation in drain extended PMOS transistors

Accurate lifetime prediction for channel hot carrier stress on sub-1 nm equivalent oxide thickness HK/MG nMOSFET with thin titanium nitride capping layer

The energy driven paradigm of NMOSFET hot carrier effects

Avalanche breakdown evolution under hot-carrier stress: a new microscopic simulation approach applied to a vertical power MOSFET

Investigation of hot carrier effects in n-MOSFETs thick oxide with HfSiON and SiON gate dielectrics

A Defect-Centric perspective on channel hot carrier variability in nMOSFETs

Voltage dependences of parameter drifts in hot carrier degradation for n-channel LDMOS transistors

Electron-electron interaction signature peak in the substrate current versus gate voltage characteristics of n-channel silicon MOSFETs

Hot carrier effects in n-channel polycrystalline silicon thin-film transistors: a correlation between off-current and transconductance variations

Combined effect of NBTI and channel hot carrier effects in pMOSFETs

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