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Programmable Readout With Integrated Bandgap Reference Potentiostat for Glucose Sensing

IEEE transactions on instrumentation and measurement, 2024-01, Vol.73, p.1

2024

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Organic Ternary Logic Inverter Using Negative Transconductance Pull-Down Switching Transistor

IEEE electron device letters, 2024-04, Vol.45 (4), p.590

2024

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Effects of the remnant polarization on the electrical characteristics of steeper sub-threshold swing Fe-GeFinFET

Materials science & engineering. B, Solid-state materials for advanced technology, 2024-05, Vol.303, Article 117317

2024

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Emulating Multimemristive Behavior of Silicon Nanowire-Based Biosensors by Using CMOS-Based Implementations

IEEE sensors journal, 2024-03, Vol.24 (6), p.8036

2024

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Synergistic effect of surface metal vacancies and Schottky junction on high-transconductance organic photoelectrochemical transistor aptasensing

Chemical communications (Cambridge, England), 2024-03, Vol.6 (21), p.2934-2937

2024

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Low-Voltage Mixed-Mode Analog Filter Using Multiple-Input Multiple-Output Operational Transconductance Amplifiers

IEEE access, 2024-01, Vol.12, p.51073-51085

2024

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Comparative Evaluation of Ferroelectric Negative Capacitance MFMIS and MFIS Transistors for Analog/Radio-Frequency Applications

IEEE transactions on nanotechnology, 2024-01, Vol.23, p.317

2024

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SiC-based high electron mobility transistor

Applied physics letters, 2024-03, Vol.124 (12)

2024

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Mg activation anneal of the p-GaN body in trench gate MOSFETs and its effect on channel mobility and threshold voltage stability

Applied physics letters, 2024-03, Vol.124 (11)

2024

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Strong contact resistance effects on vertical carrier density profile and surface trap density in WSe2 multilayers

Applied physics letters, 2024-02, Vol.124 (9)

2024

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Electrical property improvement for boron-doped diamond metal–oxide–semiconductor field-effect transistors

Applied physics letters, 2024-02, Vol.124 (7)

2024

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Origin and suppression of kink effect in InP high electron mobility transistors at cryogenic temperatures

Applied physics letters, 2024-02, Vol.124 (6)

2024

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10 MHz-Switching on GaN Trench CAVET up to 300 °C Operation Enabled by High Channel Mobility

IEEE electron device letters, 2024-01, Vol.45 (4), p.1-1

2024

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Bias-dependent electron velocity and short-channel effect in scaling sub-100 nm InAlN/GaN HFETs

Applied physics letters, 2024-04, Vol.124 (15)

2024

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Excellent electrostatic control and gate reliability for breakdown enhanced AlGaN/GaN HEMTs with extreme permittivity BaTiO3

Applied physics letters, 2024-04, Vol.124 (15)

2024

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Demonstration of GaN-channel high electron mobility transistors with regrown InAs/GaAs source and drain

Journal of applied physics, 2024-04, Vol.135 (14)

2024

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Highly Light-Harvesting MOF-on-MOF Heterostructure: Cascading Functionality to Flexible Photogating of Organic Photoelectrochemical Transistor and Bienzyme Cascade Detection

Analytical chemistry (Washington), 2024-02, Vol.96 (8), p.3679-3685

2024

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Effect of High Temperature on the Performance of AlGaN/GaN T-Gate High-Electron Mobility Transistors With ~140-nm Gate Length

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1805

2024

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A Performance Optimized Operational Amplifier Using Transconductance Enhancement Topology Based on a-IGZO TFTs

IEEE journal of the Electron Devices Society, 2024-01, Vol.12, p.159-164

2024

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A Mixture of Negative-, Zero-, and Positive-Differential Transconductance Switching from Tellurium/Indium Gallium Zinc Oxide Heterostructures

ACS applied materials & interfaces, 2024-04

2024

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Preparation of High Conductivity Hydrogenated Silicon-Doped Diamond and MOSFET

IEEE transactions on electron devices, 2024-04, Vol.71 (4), p.2329

2024

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A Display Source-Driver IC Featuring Multistage-Cascaded 10-Bit DAC and True-DC-Interpolative Super-OTA Buffer

IEEE journal of solid-state circuits, 2024-01, Vol.59 (4), p.1-17

2024

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Meminductor emulators using off-the-shelf active blocks with application in chaotic oscillator

Integration (Amsterdam), 2024-05, Vol.96, Article 102165

2024

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1 V Electronically Tunable Differential Difference Current Conveyors Using Multiple-Input Operational Transconductance Amplifiers

Sensors (Basel, Switzerland), 2024-02, Vol.24 (5), p.1558

2024

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A Reformed PSO-Based High Linear Optimized Up-Conversion Mixer for Radar Application

Sensors (Basel, Switzerland), 2024-01, Vol.24 (3), p.879

2024

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Programmable Readout With Integrated Bandgap Reference Potentiostat for Glucose Sensing

Organic Ternary Logic Inverter Using Negative Transconductance Pull-Down Switching Transistor

Effects of the remnant polarization on the electrical characteristics of steeper sub-threshold swing Fe-GeFinFET

Emulating Multimemristive Behavior of Silicon Nanowire-Based Biosensors by Using CMOS-Based Implementations

Synergistic effect of surface metal vacancies and Schottky junction on high-transconductance organic photoelectrochemical transistor aptasensing

Low-Voltage Mixed-Mode Analog Filter Using Multiple-Input Multiple-Output Operational Transconductance Amplifiers

Comparative Evaluation of Ferroelectric Negative Capacitance MFMIS and MFIS Transistors for Analog/Radio-Frequency Applications

SiC-based high electron mobility transistor

Mg activation anneal of the p-GaN body in trench gate MOSFETs and its effect on channel mobility and threshold voltage stability

Strong contact resistance effects on vertical carrier density profile and surface trap density in WSe2 multilayers

Electrical property improvement for boron-doped diamond metal–oxide–semiconductor field-effect transistors

Origin and suppression of kink effect in InP high electron mobility transistors at cryogenic temperatures

10 MHz-Switching on GaN Trench CAVET up to 300 °C Operation Enabled by High Channel Mobility

Bias-dependent electron velocity and short-channel effect in scaling sub-100 nm InAlN/GaN HFETs

Excellent electrostatic control and gate reliability for breakdown enhanced AlGaN/GaN HEMTs with extreme permittivity BaTiO3

Demonstration of GaN-channel high electron mobility transistors with regrown InAs/GaAs source and drain

Highly Light-Harvesting MOF-on-MOF Heterostructure: Cascading Functionality to Flexible Photogating of Organic Photoelectrochemical Transistor and Bienzyme Cascade Detection

Effect of High Temperature on the Performance of AlGaN/GaN T-Gate High-Electron Mobility Transistors With ~140-nm Gate Length

A Performance Optimized Operational Amplifier Using Transconductance Enhancement Topology Based on a-IGZO TFTs

A Mixture of Negative-, Zero-, and Positive-Differential Transconductance Switching from Tellurium/Indium Gallium Zinc Oxide Heterostructures

Preparation of High Conductivity Hydrogenated Silicon-Doped Diamond and MOSFET

A Display Source-Driver IC Featuring Multistage-Cascaded 10-Bit DAC and True-DC-Interpolative Super-OTA Buffer

Meminductor emulators using off-the-shelf active blocks with application in chaotic oscillator

1 V Electronically Tunable Differential Difference Current Conveyors Using Multiple-Input Operational Transconductance Amplifiers

A Reformed PSO-Based High Linear Optimized Up-Conversion Mixer for Radar Application

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