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Evidence-based data mining method to reveal similarities between materials based on physical mechanisms

Journal of applied physics, 2023-02, Vol.133 (5)

2023

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High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth

Japanese Journal of Applied Physics, 2016-12, Vol.55 (12)

2016

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Valence band ordering in β-Ga2O3 studied by polarized transmittance and reflectance spectroscopy

Japanese Journal of Applied Physics, 2015-11, Vol.54 (11)

2015

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Germanium CMOS potential from material and process perspectives: Be more positive about germanium

Japanese Journal of Applied Physics, 2018-01, Vol.57 (1), p.10101

2018

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Current status of Ga2O3 power devices

Japanese Journal of Applied Physics, 2016-12, Vol.55 (12)

2016

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Review on ferroelectric/polar metals

Japanese Journal of Applied Physics, 2020-06, Vol.59 (SI), p.SI0802

2020

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Material science and device physics in SiC technology for high-voltage power devices

Japanese Journal of Applied Physics, 2015-04, Vol.54 (4), p.40103-1-040103-27

Kimoto, Tsunenobu

2015

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Physical reservoir computing-an introductory perspective

Japanese Journal of Applied Physics, 2020-06, Vol.59 (6), p.60501

Nakajima, Kohei

2020

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A power device material of corundum-structured α-Ga2O3 fabricated by MIST EPITAXY® technique

Japanese Journal of Applied Physics, 2018-02, Vol.57 (2S2)

2018

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Structural evaluation of defects in β-Ga2O3 single crystals grown by edge-defined film-fed growth process

Japanese Journal of Applied Physics, 2016-12, Vol.55 (12)

2016

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Demonstration of zero bias responsivity in MBE grown β-Ga2O3 lateral deep-UV photodetector

Japanese Journal of Applied Physics, 2018-06, Vol.57 (6)

2018

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Conductivity control of Sn-doped α-Ga2O3 thin films grown on sapphire substrates

Japanese Journal of Applied Physics, 2016-12, Vol.55 (12)

2016

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Magnetic anisotropy of the single-crystalline ferromagnetic insulator Cr2Ge2Te6

Japanese Journal of Applied Physics, 2016-03, Vol.55 (3)

2016

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Dielectric and piezoelectric properties of Pb[(Mg 1/3 Nb 2/3 ) 0.52 (Yb 1/2 Nb 1/2 ) 0.15 Ti 0.33 ]O 3 single-crystal rectangular plate and beam mode transducers poled by alternate current poling

Japanese Journal of Applied Physics, 2019-11, Vol.58 (SL), p.SLLD06

2019

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Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer

Japanese Journal of Applied Physics, 2016-12, Vol.55 (12)

2016

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Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes

Japanese Journal of Applied Physics, 2014-10, Vol.53 (10), p.100209-1-100209-10

2014

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Evolution of corundum-structured III-oxide semiconductors: Growth, properties, and devices

Japanese Journal of Applied Physics, 2016-12, Vol.55 (12), p.1202

2016

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Emergent inductor by spiral magnets

Japanese Journal of Applied Physics, 2019-12, Vol.58 (12), p.120909

Nagaosa, Naoto

2019

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Scintillation properties of RE2Hf2O7 (RE = La, Gd, Lu) single crystals prepared by xenon arc floating zone furnace

Japanese Journal of Applied Physics, 2018-10, Vol.57 (10)

2018

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Third-generation organic electroluminescence materials

Japanese Journal of Applied Physics, 2014-06, Vol.53 (6), p.60101-1-060101-11

Adachi, Chihaya

2014

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Exploring the possibility of semiconducting BaSi2 for thin-film solar cell applications

Japanese Journal of Applied Physics, 2015-07, Vol.54 (7S2)

Suemasu, Takashi

2015

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Electrical properties of Schottky barrier diodes fabricated on (001) β-Ga2O3 substrates with crystal defects

Japanese Journal of Applied Physics, 2017-08, Vol.56 (8)

2017

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Assembly of van der Waals heterostructures: exfoliation, searching, and stacking of 2D materials

Japanese Journal of Applied Physics, 2020-01, Vol.59 (1), p.10101

2020

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High-coupling leaky surface acoustic waves on LiNbO3 or LiTaO3 thin plate bonded to high-velocity substrate

Japanese Journal of Applied Physics, 2017-07, Vol.56 (7S1)

2017

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Impact of different dopants on the switching properties of ferroelectric hafniumoxide

Japanese Journal of Applied Physics, 2014-08, Vol.53 (8S1), p.8-1-08LE02-5

2014

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Evidence-based data mining method to reveal similarities between materials based on physical mechanisms

High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth

Valence band ordering in β-Ga2O3 studied by polarized transmittance and reflectance spectroscopy

Germanium CMOS potential from material and process perspectives: Be more positive about germanium

Current status of Ga2O3 power devices

Review on ferroelectric/polar metals

Material science and device physics in SiC technology for high-voltage power devices

Physical reservoir computing-an introductory perspective

A power device material of corundum-structured α-Ga2O3 fabricated by MIST EPITAXY® technique

Structural evaluation of defects in β-Ga2O3 single crystals grown by edge-defined film-fed growth process

Demonstration of zero bias responsivity in MBE grown β-Ga2O3 lateral deep-UV photodetector

Conductivity control of Sn-doped α-Ga2O3 thin films grown on sapphire substrates

Magnetic anisotropy of the single-crystalline ferromagnetic insulator Cr2Ge2Te6

Dielectric and piezoelectric properties of Pb[(Mg 1/3 Nb 2/3 ) 0.52 (Yb 1/2 Nb 1/2 ) 0.15 Ti 0.33 ]O 3 single-crystal rectangular plate and beam mode transducers poled by alternate current poling

Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer

Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes

Evolution of corundum-structured III-oxide semiconductors: Growth, properties, and devices

Emergent inductor by spiral magnets

Scintillation properties of RE2Hf2O7 (RE = La, Gd, Lu) single crystals prepared by xenon arc floating zone furnace

Third-generation organic electroluminescence materials

Exploring the possibility of semiconducting BaSi2 for thin-film solar cell applications

Electrical properties of Schottky barrier diodes fabricated on (001) β-Ga2O3 substrates with crystal defects

Assembly of van der Waals heterostructures: exfoliation, searching, and stacking of 2D materials

High-coupling leaky surface acoustic waves on LiNbO3 or LiTaO3 thin plate bonded to high-velocity substrate

Impact of different dopants on the switching properties of ferroelectric hafniumoxide

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