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SAPIENS: A 64-kb RRAM-Based Non-Volatile Associative Memory for One-Shot Learning and Inference at the Edge
IEEE transactions on electron devices, 2021-12, Vol.68 (12), p.6637-6643
2021
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Hybrid Spin-Orbit Torque/Spin-Transfer Torque-Based Multibit Cell for Area-Efficient Magnetic Random Access Memory
IEEE transactions on electron devices, 2023-12, Vol.70 (12), p.6318-6323
2023
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Nanoelectromechanical-Switch-Based Ternary Content-Addressable Memory (NEMTCAM)
IEEE transactions on electron devices, 2021-10, Vol.68 (10), p.4903-4909
2021
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BEOL-Compatible Bilayer Reprogrammable One-Time Programmable Memory for Low-Voltage Operation
IEEE transactions on electron devices, 2023-03, Vol.70 (3), p.1042-1047
2023
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A Novel Computing-in-Memory Platform Based on Hybrid Spintronic/CMOS Memory
IEEE transactions on electron devices, 2022-04, Vol.69 (4), p.1698-1705
2022
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Evolution of Phase-Change Memory for the Storage-Class Memory and Beyond
IEEE transactions on electron devices, 2020-04, Vol.67 (4), p.1394-1406
2020
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High-Performance Operation and Solder Reflow Compatibility in BEOL-Integrated 16-kb HfO2: Si-Based 1T-1C FeRAM Arrays
IEEE transactions on electron devices, 2022-04, Vol.69 (4), p.2108-2114
2022
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ReRAM: History, Status, and Future
IEEE transactions on electron devices, 2020-04, Vol.67 (4), p.1420-1433
2020
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Training a Probabilistic Graphical Model With Resistive Switching Electronic Synapses
IEEE transactions on electron devices, 2016-12, Vol.63 (12), p.5004-5011
2016
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Redundancy and Analog Slicing for Precise In-Memory Machine Learning-Part II: Applications and Benchmark
IEEE transactions on electron devices, 2021-09, Vol.68 (9), p.4379-4383
2021
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Efficient Implementation of Boolean and Full-Adder Functions With 1T1R RRAMs for Beyond Von Neumann In-Memory Computing
IEEE transactions on electron devices, 2018-10, Vol.65 (10), p.4659-4666
2018
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A Highly Compact Nonvolatile Ternary Content Addressable Memory (TCAM) With Ultralow Power and 200-ps Search Operation
IEEE transactions on electron devices, 2022-08, Vol.69 (8), p.4259-4264
2022
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Low Temperature SoIC Bonding and Stacking Technology for 12-/16-Hi High Bandwidth Memory (HBM)
IEEE transactions on electron devices, 2020-12, Vol.67 (12), p.5343-5348
2020
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Simulations of Ultralow-Power Nonvolatile Cells for Random-Access Memory
IEEE transactions on electron devices, 2020-02, Vol.67 (2), p.474-480
2020
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A Study on Practically Unlimited Endurance of STT-MRAM
IEEE transactions on electron devices, 2017-09, Vol.64 (9), p.3639-3646
2017
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Resistive Switching Device Technology Based on Silicon Oxide for Improved ON-OFF Ratio-Part I: Memory Devices
IEEE transactions on electron devices, 2018-01, Vol.65 (1), p.115-121
2018
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Spray-Coated, Volatile and Nonvolatile, Two-Terminal, Resistive Switching Memory Devices Comprising Liquid-Exfoliated Black Phosphorus and Graphene Layers
IEEE transactions on electron devices, 2020-12, Vol.67 (12), p.5484-5489
2020
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Redundancy and Analog Slicing for Precise In-Memory Machine Learning-Part I: Programming Techniques
IEEE transactions on electron devices, 2021-09, Vol.68 (9), p.4373-4378
2021
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Fully On-Chip MAC at 14 nm Enabled by Accurate Row-Wise Programming of PCM-Based Weights and Parallel Vector-Transport in Duration-Format
IEEE transactions on electron devices, 2021-12, Vol.68 (12), p.6629-6636
2021
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Dual-Functional Hybrid Selectorless RRAM and Selection Device for Memory Array Application
IEEE transactions on electron devices, 2021-09, Vol.68 (9), p.4363-4367
2021
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Next-Generation Ultrahigh-Density 3-D Vertical Resistive Switching Memory (VRSM)-Part II: Design Guidelines for Device, Array, and Architecture
IEEE transactions on electron devices, 2019-12, Vol.66 (12), p.5147-5154
2019
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Thorough Understanding of Retention Time of Z2FET Memory Operation
IEEE transactions on electron devices, 2019-01, Vol.66 (1), p.383-388
2019
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Compressed Sensing With Approximate Message Passing Using In-Memory Computing
IEEE transactions on electron devices, 2018-10, Vol.65 (10), p.4304-4312
2018
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Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM-Part II: Modeling
IEEE transactions on electron devices, 2012-09, Vol.59 (9), p.2468-2475
2012
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Experimental Demonstration of Memristor-Aided Logic (MAGIC) Using Valence Change Memory (VCM)
IEEE transactions on electron devices, 2020-08, Vol.67 (8), p.3115-3122
2020
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