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0.0012 mm2, 8 mW, single-to-differential converter with < 1.1% data cross error and < 3.4 ps RMS jitter up to 14 Gbit/s data rate

Electronics letters, 2013-05, Vol.49 (11), p.692-694

2013

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A 0.0014 mm2, 1.18 TΩ Segmented Duty-Cycled Resistor Replacing Pseudo-Resistor for Neural Recording Interface Circuits

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2022, p.62-63

2022

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A 0.0018 mm frequency-to-digital-converter-based CMOS smart temperature sensor

Analog integrated circuits and signal processing, 2010-08, Vol.64 (2), p.153-157

2010

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A 0.001mm2 100µW on-chip temperature sensor with ±1.95 °C (3σ) Inaccuracy in 32nm SOI CMOS

2012 IEEE International Symposium on Circuits and Systems (ISCAS), 2012, p.1999-2002

2012

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A 0.002‐mm2 8‐bit 1‐MS/s low‐power time‐based DAC (T‐DAC)

IET circuits, devices & systems, 2021-11, Vol.15 (8), p.738-744

2021

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A 0.0025mm2 bandgap voltage reference for 1.1V supply in standard 0.16μm CMOS

2012 IEEE International Solid-State Circuits Conference, 2012, p.364-366

2012

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A 0.0027-mm2 9.5-bit 50-MS/s all-digital A/D converter TAD in 65-nm digital CMOS

2009 16th IEEE International Conference on Electronics, Circuits and Systems - (ICECS 2009), 2009, p.271-274

2009

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A 0.003 mm ^ 10 b 240 MS/s 0.7 mW SAR ADC in 28 nm CMOS With Digital Error Correction and Correlated-Reversed Switching

IEEE journal of solid-state circuits, 2015-06, Vol.50 (6), p.1382-1398

2015

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A 0.003-mm2 50-mW three-stage amplifier driving 10-nF with 2.7-MHz GBW

2016 IEEE International Conference on Electronics, Circuits and Systems (ICECS), 2016, p.728-731

2016

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A 0.004% resolution & SAT<1.8 μson-chip adaptive anti-aging system using cuckoo intelligence-based algorithm in 65 nm CMOS

Integration (Amsterdam), 2021-05, Vol.78, p.135-143

2021

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A 0.00426 mm2 77.6-dB Dynamic Range VCO-Based CTDSM for Multi-Channel Neural Recording

Electronics (Basel), 2022-10, Vol.11 (21), p.3477

2022

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A 0.0045- \hbox^ 32.4- \mu\hbox Two-Stage Amplifier for pF-to-nF Load Using CM Frequency Compensation

IEEE transactions on circuits and systems. II, Express briefs, 2015-03, Vol.62 (3), p.246-250

2015

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0.0045 mm2 15.8 µW three-stage amplifier driving 10×-wide (0.15–1.5 nF) capacitive loads with >50° phase margin

Electronics letters, 2015-03, Vol.51 (6), p.454-456

2015

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A 0.0048mm2 0.43-to-1.0V 0.54-to-1.76GHz Bias-Current-Free PLL in 14nm FinFET CMOS

2021 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA), 2021, p.76-77

2021

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A 0.004mm2 single-channel 6-bit 1.25GS/s SAR ADC in 40nm CMOS

2013 IEEE Asian Solid-State Circuits Conference (A-SSCC), 2013, p.277-280

2013

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A 0.0058-mm ^ Inductor-Less CMOS Active Balun With Gain and Phase Errors Within - 0.1 \pm 0.2 dB and - 0.18 \pm 1.17 ^ From DC to 8 GHz

IEEE transactions on circuits and systems. I, Regular papers, 2023-03, p.1-14

2023

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A 0.009-1.4-GHz Frequency Synthesizer With Suppressed Transients During VCO Band Switching

IEEE transactions on circuits and systems. II, Express briefs, 2015-12, Vol.62 (12), p.1129-1133

2015

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A 0.009mm2, 0-230mA Wide-range Load Current Output Capacitor-less Low Dropout Regulator for High Bandwidth Memory parallel IOs

2022 35th International Conference on VLSI Design and 2022 21st International Conference on Embedded Systems (VLSID), 2022, p.6-10

2022

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A 0.009mm2, 6.5mW, 6.2b-ENOB 2.5GS/s Flash-and-VCO-Based Subranging ADC Using a Resistor-Ladder-Based Residue Shifter

2023 IEEE Custom Integrated Circuits Conference (CICC), 2023, p.1-2

2023

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0.01-22-GHz Feedback-Stabilized Single-Supply GaAs Cascode Distributed Amplifiers

IEEE microwave and wireless components letters, 2021-12, Vol.31 (12), p.1291-1294

2021

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0.01-50 GHz power detector MMICs

2015 IEEE 15th Mediterranean Microwave Symposium (MMS), 2015, p.1-4

2015

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A 0.01-8-GHz (12.5 Gb/s) 4[Formula Omitted]4 CMOS Switch Matrix

IEEE transactions on microwave theory and techniques, 2012-02, Vol.60 (2), p.381-386

2012

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A 0.01-8-GHz (12.5 Gb/s) 4 \,\times\,4 CMOS Switch Matrix

IEEE transactions on microwave theory and techniques, 2012-02, Vol.60 (2), p.381-386

2012

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A 0.01―8-GHz (12.5 Gb/s) 4 x 4 CMOS Switch Matrix

IEEE transactions on microwave theory and techniques, 2012-02, Vol.60 (2), p.381-386

2012

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A 0.01 mm2 fully-differential 2-stage amplifier with reference-free CMFB using an architecture-switching-scheme for bandwidth variation

ESSCIRC Conference 2015 - 41st European Solid-State Circuits Conference (ESSCIRC), 2015, p.287-290

2015

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0.0012 mm2, 8 mW, single-to-differential converter with < 1.1% data cross error and < 3.4 ps RMS jitter up to 14 Gbit/s data rate

A 0.0014 mm2, 1.18 TΩ Segmented Duty-Cycled Resistor Replacing Pseudo-Resistor for Neural Recording Interface Circuits

A 0.0018 mm frequency-to-digital-converter-based CMOS smart temperature sensor

A 0.001mm2 100µW on-chip temperature sensor with ±1.95 °C (3σ) Inaccuracy in 32nm SOI CMOS

A 0.002‐mm2 8‐bit 1‐MS/s low‐power time‐based DAC (T‐DAC)

A 0.0025mm2 bandgap voltage reference for 1.1V supply in standard 0.16μm CMOS

A 0.0027-mm2 9.5-bit 50-MS/s all-digital A/D converter TAD in 65-nm digital CMOS

A 0.003 mm ^ 10 b 240 MS/s 0.7 mW SAR ADC in 28 nm CMOS With Digital Error Correction and Correlated-Reversed Switching

A 0.003-mm2 50-mW three-stage amplifier driving 10-nF with 2.7-MHz GBW

A 0.004% resolution & SAT<1.8 μson-chip adaptive anti-aging system using cuckoo intelligence-based algorithm in 65 nm CMOS

A 0.00426 mm2 77.6-dB Dynamic Range VCO-Based CTDSM for Multi-Channel Neural Recording

A 0.0045- \hbox^ 32.4- \mu\hbox Two-Stage Amplifier for pF-to-nF Load Using CM Frequency Compensation

0.0045 mm2 15.8 µW three-stage amplifier driving 10×-wide (0.15–1.5 nF) capacitive loads with >50° phase margin

A 0.0048mm2 0.43-to-1.0V 0.54-to-1.76GHz Bias-Current-Free PLL in 14nm FinFET CMOS

A 0.004mm2 single-channel 6-bit 1.25GS/s SAR ADC in 40nm CMOS

A 0.0058-mm ^ Inductor-Less CMOS Active Balun With Gain and Phase Errors Within - 0.1 \pm 0.2 dB and - 0.18 \pm 1.17 ^ From DC to 8 GHz

A 0.009-1.4-GHz Frequency Synthesizer With Suppressed Transients During VCO Band Switching

A 0.009mm2, 0-230mA Wide-range Load Current Output Capacitor-less Low Dropout Regulator for High Bandwidth Memory parallel IOs

A 0.009mm2, 6.5mW, 6.2b-ENOB 2.5GS/s Flash-and-VCO-Based Subranging ADC Using a Resistor-Ladder-Based Residue Shifter

0.01-22-GHz Feedback-Stabilized Single-Supply GaAs Cascode Distributed Amplifiers

0.01-50 GHz power detector MMICs

A 0.01-8-GHz (12.5 Gb/s) 4[Formula Omitted]4 CMOS Switch Matrix

A 0.01-8-GHz (12.5 Gb/s) 4 \,\times\,4 CMOS Switch Matrix

A 0.01―8-GHz (12.5 Gb/s) 4 x 4 CMOS Switch Matrix

A 0.01 mm2 fully-differential 2-stage amplifier with reference-free CMFB using an architecture-switching-scheme for bandwidth variation

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