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Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

Materials science & engineering. R, Reports : a review journal, 2014-09, Vol.83, p.1-59

2014

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Neuromorphic Electronic Circuits for Building Autonomous Cognitive Systems

Proceedings of the IEEE, 2014-09, Vol.102 (9), p.1367-1388

2014

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A Scaling Roadmap and Performance Evaluation of In-Plane and Perpendicular MTJ Based STT-MRAMs for High-Density Cache Memory

IEEE journal of solid-state circuits, 2013-02, Vol.48 (2), p.598-610

2013

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Overview of Beyond-CMOS Devices and a Uniform Methodology for Their Benchmarking

Proceedings of the IEEE, 2013-12, Vol.101 (12), p.2498-2533

2013

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A DC-DC Multiport-Converter-Based Solid-State Transformer Integrating Distributed Generation and Storage

IEEE transactions on power electronics, 2013-05, Vol.28 (5), p.2192-2203

2013

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Global Mittag-Leffler stability and synchronization of memristor-based fractional-order neural networks

Neural networks, 2014-03, Vol.51, p.1-8

2014

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PUF Modeling Attacks on Simulated and Silicon Data

IEEE transactions on information forensics and security, 2013-11, Vol.8 (11), p.1876-1891

2013

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Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects

Nature (London), 2010-03, Vol.464 (7285), p.80-84

2010

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A SPICE Compact Model of Metal Oxide Resistive Switching Memory With Variations

IEEE electron device letters, 2012-10, Vol.33 (10), p.1405-1407

2012

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Endurance/Retention Trade-off on HfO2/Metal Cap 1T1R Bipolar RRAM

IEEE transactions on electron devices, 2013-03, Vol.60 (3), p.1114-1121

2013

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RRAM Crossbar Array With Cell Selection Device: A Device and Circuit Interaction Study

IEEE transactions on electron devices, 2013-02, Vol.60 (2), p.719-726

2013

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A Physics-Based Compact Model of Metal-Oxide-Based RRAM DC and AC Operations

IEEE transactions on electron devices, 2013-12, Vol.60 (12), p.4090-4097

2013

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Volltext

Bio-Inspired Stochastic Computing Using Binary CBRAM Synapses

IEEE transactions on electron devices, 2013-07, Vol.60 (7), p.2402-2409

2013

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Volltext

Memristor Bridge Synapse-Based Neural Network and Its Learning

IEEE transaction on neural networks and learning systems, 2012-09, Vol.23 (9), p.1426-1435

2012

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A Single-Ended Disturb-Free 9T Subthreshold SRAM With Cross-Point Data-Aware Write Word-Line Structure, Negative Bit-Line, and Adaptive Read Operation Timing Tracing

IEEE journal of solid-state circuits, 2012-06, Vol.47 (6), p.1469-1482

2012

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A SPICE Model of Resistive Random Access Memory for Large-Scale Memory Array Simulation

IEEE electron device letters, 2014-02, Vol.35 (2), p.211-213

2014

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Immunity to Device Variations in a Spiking Neural Network With Memristive Nanodevices

IEEE transactions on nanotechnology, 2013-05, Vol.12 (3), p.288-295

2013

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State Dynamics and Modeling of Tantalum Oxide Memristors

IEEE transactions on electron devices, 2013-07, Vol.60 (7), p.2194-2202

2013

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Global exponential dissipativity and stabilization of memristor-based recurrent neural networks with time-varying delays

Neural networks, 2013-12, Vol.48, p.158-172

2013

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Variable Switching Frequency PWM for Three-Phase Converters Based on Current Ripple Prediction

IEEE transactions on power electronics, 2013-11, Vol.28 (11), p.4951-4961

2013

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Low-Leakage-Current DRAM-Like Memory Using a One-Transistor Ferroelectric MOSFET With a Hf-Based Gate Dielectric

IEEE electron device letters, 2014-01, Vol.35 (1), p.138-140

2014

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Attractivity Analysis of Memristor-Based Cellular Neural Networks With Time-Varying Delays

IEEE transaction on neural networks and learning systems, 2014-04, Vol.25 (4), p.704-717

2014

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Balancing SET/RESET Pulse for > 1010 Endurance in HfO2/Hf 1T1R Bipolar RRAM

IEEE transactions on electron devices, 2012-12, Vol.59 (12), p.3243-3249

2012

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2.4 Gbps, 7 mW All-Digital PVT-Variation Tolerant True Random Number Generator for 45 nm CMOS High-Performance Microprocessors

IEEE journal of solid-state circuits, 2012-11, Vol.47 (11), p.2807-2821

2012

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From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of HfO2-Based FeFET Devices

IEEE transactions on electron devices, 2013-12, Vol.60 (12), p.4199-4205

2013

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Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

Neuromorphic Electronic Circuits for Building Autonomous Cognitive Systems

A Scaling Roadmap and Performance Evaluation of In-Plane and Perpendicular MTJ Based STT-MRAMs for High-Density Cache Memory

Overview of Beyond-CMOS Devices and a Uniform Methodology for Their Benchmarking

A DC-DC Multiport-Converter-Based Solid-State Transformer Integrating Distributed Generation and Storage

Global Mittag-Leffler stability and synchronization of memristor-based fractional-order neural networks

PUF Modeling Attacks on Simulated and Silicon Data

Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects

A SPICE Compact Model of Metal Oxide Resistive Switching Memory With Variations

Endurance/Retention Trade-off on HfO2/Metal Cap 1T1R Bipolar RRAM

RRAM Crossbar Array With Cell Selection Device: A Device and Circuit Interaction Study

A Physics-Based Compact Model of Metal-Oxide-Based RRAM DC and AC Operations

Bio-Inspired Stochastic Computing Using Binary CBRAM Synapses

Memristor Bridge Synapse-Based Neural Network and Its Learning

A Single-Ended Disturb-Free 9T Subthreshold SRAM With Cross-Point Data-Aware Write Word-Line Structure, Negative Bit-Line, and Adaptive Read Operation Timing Tracing

A SPICE Model of Resistive Random Access Memory for Large-Scale Memory Array Simulation

Immunity to Device Variations in a Spiking Neural Network With Memristive Nanodevices

State Dynamics and Modeling of Tantalum Oxide Memristors

Global exponential dissipativity and stabilization of memristor-based recurrent neural networks with time-varying delays

Variable Switching Frequency PWM for Three-Phase Converters Based on Current Ripple Prediction

Low-Leakage-Current DRAM-Like Memory Using a One-Transistor Ferroelectric MOSFET With a Hf-Based Gate Dielectric

Attractivity Analysis of Memristor-Based Cellular Neural Networks With Time-Varying Delays

Balancing SET/RESET Pulse for > 1010 Endurance in HfO2/Hf 1T1R Bipolar RRAM

2.4 Gbps, 7 mW All-Digital PVT-Variation Tolerant True Random Number Generator for 45 nm CMOS High-Performance Microprocessors

From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of HfO2-Based FeFET Devices

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