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Non-Volatile Polymer Electroluminescence Programmable with Ferroelectric Field-Induced Charge Injection Gate

Advanced functional materials, 2016-08, Vol.26 (30), p.5391-5399

2016

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Ferroelectric Polymers: Non-Volatile Polymer Electroluminescence Programmable with Ferroelectric Field-Induced Charge Injection Gate (Adv. Funct. Mater. 30/2016)

Advanced functional materials, 2016-08, Vol.26 (30), p.5381-5381

2016

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Low switching loss and increased short-circuit capability split-gate SiC trench MOSFET with p-type pillar

Chinese physics B, 2023-05, Vol.32 (5), p.58501-776

2023

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SiC Heterojunction Trench MOSFET with a Buried P-Type Pillar for the Low Gate-Drain Charge and Switching Loss

Micromachines (Basel), 2022-02, Vol.13 (2), p.248

2022

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Modulation of Ciss of a 4H-SiC Planar MOSFET With a Shorter Sidewall and a Thicker Gate

IEEE electron device letters, 2023-11, Vol.44 (11), p.1825-1828

2023

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Gate Quantum Capacitance Effects in Nanoscale Transistors

Nano letters, 2019-10, Vol.19 (10), p.7130-7137

2019

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An experimental study on switching waveform design with gate charge control for power MOSFETs

Power electronic devices and components, 2023-10, Vol.6, p.100043, Article 100043

2023

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Comparison between ig integration and vgs derivation methods dedicated to fast short-circuit 2D diagnosis for wide bandgap power transistors

Mathematics and computers in simulation, 2021-05, Vol.183, p.171-186

2021

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Investigation on the passivation, band alignment, gate charge, and mobility degradation of the Ge MOSFET with a GeO x /Al2O3 gate stack by ozone oxidation

Journal of semiconductors, 2022-01, Vol.43 (1)

2022

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Switching waveform design with gate charge control for power MOSFETs

Power electronic devices and components, 2022-10, Vol.3, p.100018, Article 100018

2022

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4H-SiC Double Trench MOSFET with Split Heterojunction Gate for Improving Switching Characteristics

Materials, 2021-06, Vol.14 (13), p.3554

2021

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Split gate SOI trench LDMOS with low-resistance channel

Superlattices and microstructures, 2017-02, Vol.102, p.399-406

2017

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Vertical GaN Power MOSFET with Integrated Fin-Shaped Diode for Reverse Conduction

Nanoscale research letters, 2022-08, Vol.17 (1), p.78-78, Article 78

2022

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The Effect of Dual Dummy Gate in the Drift Region on the on-State Performance of SOI-LDMOS Transistor for Power Amplifier Application

SILICON, 2022-04, Vol.14 (5), p.2039-2050

2022

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Lateral variation doped wide bottom trench gate IGBT for reduced on-resistance with improved gate charge

Materials today : proceedings, 2021, Vol.46, p.4587-4592

2021

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BV > 3 kV/VTH = 3.5 V Normally-Off Al0.6Ga0.4N MOSFET With Recessed-Gate and Ferroelectric Gate Dielectric

IEEE electron device letters, 2022-12, Vol.43 (12), p.2141-2144

2022

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A non-volatile AND gate based on Al2O3/HfO2/Al2O3 charge-trap stack for in-situ storage applications

Science bulletin, 2019-10, Vol.64 (20), p.1518-1524

2019

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E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack With Low Dynamic On-Resistance and High Vth Stability by Field Plate Engineering

IEEE electron device letters, 2021-09, Vol.42 (9), p.1268-1271

2021

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A low gate charge field-plate trench MOSFET with hollow split gate structure

Microelectronics, 2022-12, Vol.130, p.105627, Article 105627

2022

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Non-Volatile Flash Memory on Ge With an Oxidation-Induced Self-Assembled Charge Trapping Layer

IEEE electron device letters, 2022-06, Vol.43 (6), p.842-845

2022

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Normally-Off Tri-Gate GaN MIS-HEMTs with 0.76 mΩ·cm2 Specific On-Resistance for Power Device Applications

IEEE transactions on electron devices, 2019-08, Vol.66 (8), p.3441-3446

2019

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Improving dynamic performance for split-gate trench power MOSFETs using variable vertical doping profile

Micro and Nanostructures, 2022-12, Vol.172, p.207446, Article 207446

2022

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3.3 kV 4H-SiC DMOSFET with a source-contacted dummy gate for high-frequency applications

Journal of semiconductors, 2021-06, Vol.42 (6), p.62801-49

2021

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Recent Progress of E‐mode Gallium Nitride Metal–Insulator–Semiconductor ‐High Electron Mobility Transistors with Hybrid Ferroelectric Charge Trap Gate (FEG‐HEMT) for Power Switching Applications

Physica status solidi. A, Applications and materials science, 2023-08, Vol.220 (16), p.n/a

2023

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Evaluation of SiC Stack Cascode for 200°C Operations

Materials science forum, 2014-02, Vol.778-780, p.879-882

2014

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Non-Volatile Polymer Electroluminescence Programmable with Ferroelectric Field-Induced Charge Injection Gate

Ferroelectric Polymers: Non-Volatile Polymer Electroluminescence Programmable with Ferroelectric Field-Induced Charge Injection Gate (Adv. Funct. Mater. 30/2016)

Low switching loss and increased short-circuit capability split-gate SiC trench MOSFET with p-type pillar

SiC Heterojunction Trench MOSFET with a Buried P-Type Pillar for the Low Gate-Drain Charge and Switching Loss

Modulation of Ciss of a 4H-SiC Planar MOSFET With a Shorter Sidewall and a Thicker Gate

Gate Quantum Capacitance Effects in Nanoscale Transistors

An experimental study on switching waveform design with gate charge control for power MOSFETs

Comparison between ig integration and vgs derivation methods dedicated to fast short-circuit 2D diagnosis for wide bandgap power transistors

Investigation on the passivation, band alignment, gate charge, and mobility degradation of the Ge MOSFET with a GeO x /Al2O3 gate stack by ozone oxidation

Switching waveform design with gate charge control for power MOSFETs

4H-SiC Double Trench MOSFET with Split Heterojunction Gate for Improving Switching Characteristics

Split gate SOI trench LDMOS with low-resistance channel

Vertical GaN Power MOSFET with Integrated Fin-Shaped Diode for Reverse Conduction

The Effect of Dual Dummy Gate in the Drift Region on the on-State Performance of SOI-LDMOS Transistor for Power Amplifier Application

Lateral variation doped wide bottom trench gate IGBT for reduced on-resistance with improved gate charge

BV > 3 kV/VTH = 3.5 V Normally-Off Al0.6Ga0.4N MOSFET With Recessed-Gate and Ferroelectric Gate Dielectric

A non-volatile AND gate based on Al2O3/HfO2/Al2O3 charge-trap stack for in-situ storage applications

E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack With Low Dynamic On-Resistance and High Vth Stability by Field Plate Engineering

A low gate charge field-plate trench MOSFET with hollow split gate structure

Non-Volatile Flash Memory on Ge With an Oxidation-Induced Self-Assembled Charge Trapping Layer

Normally-Off Tri-Gate GaN MIS-HEMTs with 0.76 mΩ·cm2 Specific On-Resistance for Power Device Applications

Improving dynamic performance for split-gate trench power MOSFETs using variable vertical doping profile

3.3 kV 4H-SiC DMOSFET with a source-contacted dummy gate for high-frequency applications

Recent Progress of E‐mode Gallium Nitride Metal–Insulator–Semiconductor ‐High Electron Mobility Transistors with Hybrid Ferroelectric Charge Trap Gate (FEG‐HEMT) for Power Switching Applications

Evaluation of SiC Stack Cascode for 200°C Operations

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