UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 49

Sortiert nach

Characterizing Trench-Gate Power Metal–Oxide–Semiconductor Field Effect Transistor with Multi-Layer Dielectrics at the Trench Bottom

Japanese Journal of Applied Physics, 2003, Vol.42 (Part 1, No. 11), p.6795-6799

2003

Link zum Volltext

Verfügbarkeit prüfen

Electron Spin Resonance Observation of Gate-Induced Ambipolar Charge Carriers in Organic Devices

Japanese Journal of Applied Physics, 2007-12, Vol.46 (12L), p.L1191

2007

Link zum Volltext

Verfügbarkeit prüfen

Modeling of γ-Irradiation and Lowered Temperature Effects in Power Vertical Double-Diffused Metal-Oxide-Semiconductor Transistors

Japanese Journal of Applied Physics, 1999, Vol.38 (Part 1, No. 8), p.4699-4702

1999

Link zum Volltext

Verfügbarkeit prüfen

Studies on the electrical characteristics of a high-k dielectric/metal gate MOS capacitor by high-pressure annealing

Japanese Journal of Applied Physics, 2022-05, Vol.61 (5), p.51002

2022

Link zum Volltext

Verfügbarkeit prüfen

Hot carrier relief of metal oxide semiconductor field effect transistor by using work-function engineering

Japanese Journal of Applied Physics, 1990-12, Vol.29 (12), p.L2286-L2288

1990

Link zum Volltext

Verfügbarkeit prüfen

Threshold-voltage instability in 4H-SiC MOSFETs with nitrided gate oxide revealed by non-relaxation method

Japanese Journal of Applied Physics, 2016-04, Vol.55 (4S), p.4

2016

Link zum Volltext

Verfügbarkeit prüfen

Role of gate current and polarization switching in sub-60 mV/decade steep subthreshold slope in metal–ferroelectric HfZrO^sub 2^–metal–insulator–Si FET

Japanese Journal of Applied Physics, 2018-11, Vol.57 (11), p.114202

2018

Link zum Volltext

Verfügbarkeit prüfen

Charge pumping current from single Si/SiO sub(2) interface traps: Direct observation of P sub(b) centers and fundamental trap-counting by the charge pumping method

Japanese Journal of Applied Physics, 2015-04, Vol.54 (4S), p.04DC01-1-04DC01-7

2015

Link zum Volltext

Verfügbarkeit prüfen

Detection of molecular charge dynamics through current noise in a GaAs-based nanowire FET

Japanese Journal of Applied Physics, 2015-04, Vol.54 (4S), p.4-1-04DN07-5

2015

Link zum Volltext

Verfügbarkeit prüfen

Dual Function of Single Electron Transistor Coupled with Double Quantum Dot: Gating and Charge Sensing

Japanese Journal of Applied Physics, 2013-04, Vol.52 (4), p.04CJ01-04CJ01-4

2013

Link zum Volltext

Verfügbarkeit prüfen

Control of Threshold Voltage in GaN Based Metal--Oxide--Semiconductor High-Electron Mobility Transistors towards the Normally-Off Operation

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8), p.08JN08-08JN08-5

2013

Link zum Volltext

Verfügbarkeit prüfen

Mechanism of state transition of a defect causing random-telegraph-noise-induced fluctuation in stress-induced leakage current of SiO sub(2) films

Japanese Journal of Applied Physics, 2014-01, Vol.53 (8S1), p.08LB01-1-08LB01-6

2014

Link zum Volltext

Verfügbarkeit prüfen

Experimental study of three-dimensional fin-channel charge trapping flash memories with titanium nitride and polycrystalline silicon gates

Japanese Journal of Applied Physics, 2014-04, Vol.53 (4S), p.4-1-04ED16-7

2014

Link zum Volltext

Verfügbarkeit prüfen

Improved Memory Characteristics of A Novel TaN/Al sub(2)O sub(3)/TiO sub(2)/HfO sub(2)/SiO sub(2)/Si Structured Charge Trapping Memory

Japanese Journal of Applied Physics, 2013-04, Vol.52 (4S), p.04CD13-04CD13

2013

Link zum Volltext

Verfügbarkeit prüfen

Highly Oriented Polymer Field-Effect Transistors with High Electrical Stability

Japanese Journal of Applied Physics, 2013-12, Vol.52 (12), p.121601-121601-4

2013

Link zum Volltext

Verfügbarkeit prüfen

Ultra-Short Pulse Current–Voltage Characterization of the Intrinsic Characteristics of High-κ Devices

Japanese Journal of Applied Physics, 2005-04, Vol.44 (4S), p.2437

2005

Link zum Volltext

Verfügbarkeit prüfen

Compact Modeling of Floating-Base Effect in Injection-Enhanced Insulated-Gate Bipolar Transistor Based on Potential Modification by Accumulated Charge

Japanese Journal of Applied Physics, 2013-04, Vol.52 (4), p.04CP07-04CP07-5

2013

Link zum Volltext

Verfügbarkeit prüfen

Effective Electron Mobility Reduced by Remote Charge Scattering in High-κ Gate Stacks

Japanese Journal of Applied Physics, 2002, Vol.41 (Part 1, No. 7A), p.4521-4522

2002

Link zum Volltext

Verfügbarkeit prüfen

Data Retention Characteristics of Nitride-Based Charge Trap Memory Devices with High-k Dielectrics and High-Work-Function Metal Gates for Multi-Gigabit Flash Memory

Japanese Journal of Applied Physics, 2006-04, Vol.45 (4S), p.3213

2006

Link zum Volltext

Verfügbarkeit prüfen

Turn-Around of Threshold Voltage in Gate Bias Stressed p-Channel Power Vertical Double-Diffused Metal–Oxide–Semiconductor Transistors

Japanese Journal of Applied Physics, 2008-08, Vol.47 (8R), p.6272

2008

Link zum Volltext

Verfügbarkeit prüfen

Influence of Charge Traps within HfSiON Bulk on Positive and Negative Bias Temperature Instability of HfSiON Gate Stacks

Japanese Journal of Applied Physics, 2005-04, Vol.44 (4S), p.2385

2005

Link zum Volltext

Verfügbarkeit prüfen

Performance Enhancement by Local Strain in Channel n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors on (111) Substrate

Japanese Journal of Applied Physics, 2007-09, Vol.46 (9R), p.5715

2007

Link zum Volltext

Verfügbarkeit prüfen

Gate Annealing of Cycling Endurance and Interface States for Highly Reliable Flash Memory

Japanese Journal of Applied Physics, 2008-01, Vol.47 (1R), p.80

2008

Link zum Volltext

Verfügbarkeit prüfen

New Current–Voltage Model for Surrounding-Gate Metal–Oxide–Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics, 2005-09, Vol.44 (9R), p.6446

Chiang, Te-Kuang

2005

Link zum Volltext

Verfügbarkeit prüfen

Performance Degradation Induced by Fringing Field-Induced Barrier Lowering and Parasitic Charge in Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors with High-κ Dielectrics

Japanese Journal of Applied Physics, 2005-12, Vol.44 (12R), p.8362-8366

2005

Link zum Volltext

Verfügbarkeit prüfen

1 – 25 von 49

Suche als RSS-Feed

Aktive Filter

ThemaCharge Carrier Processes

Zeitschrift / SerieJapanese Journal Of Applied Physics

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(49)
Mit Volltextzugriff
(49)

Publikationsform

Artikel
(49)

Sprache

Englisch
(49)
Japanisch
(30)

Erscheinungsjahr

n.n

Kollektion

Publisher site
(49)

Menü

Weitere Dienste

Einstellungen

Characterizing Trench-Gate Power Metal–Oxide–Semiconductor Field Effect Transistor with Multi-Layer Dielectrics at the Trench Bottom

Electron Spin Resonance Observation of Gate-Induced Ambipolar Charge Carriers in Organic Devices

Modeling of γ-Irradiation and Lowered Temperature Effects in Power Vertical Double-Diffused Metal-Oxide-Semiconductor Transistors

Studies on the electrical characteristics of a high-k dielectric/metal gate MOS capacitor by high-pressure annealing

Hot carrier relief of metal oxide semiconductor field effect transistor by using work-function engineering

Threshold-voltage instability in 4H-SiC MOSFETs with nitrided gate oxide revealed by non-relaxation method

Role of gate current and polarization switching in sub-60 mV/decade steep subthreshold slope in metal–ferroelectric HfZrO^sub 2^–metal–insulator–Si FET

Charge pumping current from single Si/SiO sub(2) interface traps: Direct observation of P sub(b) centers and fundamental trap-counting by the charge pumping method

Detection of molecular charge dynamics through current noise in a GaAs-based nanowire FET

Dual Function of Single Electron Transistor Coupled with Double Quantum Dot: Gating and Charge Sensing

Control of Threshold Voltage in GaN Based Metal--Oxide--Semiconductor High-Electron Mobility Transistors towards the Normally-Off Operation

Mechanism of state transition of a defect causing random-telegraph-noise-induced fluctuation in stress-induced leakage current of SiO sub(2) films

Experimental study of three-dimensional fin-channel charge trapping flash memories with titanium nitride and polycrystalline silicon gates

Improved Memory Characteristics of A Novel TaN/Al sub(2)O sub(3)/TiO sub(2)/HfO sub(2)/SiO sub(2)/Si Structured Charge Trapping Memory

Highly Oriented Polymer Field-Effect Transistors with High Electrical Stability

Ultra-Short Pulse Current–Voltage Characterization of the Intrinsic Characteristics of High-κ Devices

Compact Modeling of Floating-Base Effect in Injection-Enhanced Insulated-Gate Bipolar Transistor Based on Potential Modification by Accumulated Charge

Effective Electron Mobility Reduced by Remote Charge Scattering in High-κ Gate Stacks

Data Retention Characteristics of Nitride-Based Charge Trap Memory Devices with High-k Dielectrics and High-Work-Function Metal Gates for Multi-Gigabit Flash Memory

Turn-Around of Threshold Voltage in Gate Bias Stressed p-Channel Power Vertical Double-Diffused Metal–Oxide–Semiconductor Transistors

Influence of Charge Traps within HfSiON Bulk on Positive and Negative Bias Temperature Instability of HfSiON Gate Stacks

Performance Enhancement by Local Strain in Channel n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors on (111) Substrate

Gate Annealing of Cycling Endurance and Interface States for Highly Reliable Flash Memory

New Current–Voltage Model for Surrounding-Gate Metal–Oxide–Semiconductor Field Effect Transistors

Performance Degradation Induced by Fringing Field-Induced Barrier Lowering and Parasitic Charge in Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors with High-κ Dielectrics

Aktive Filter

Suchergebnisse filtern