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GaN-on-Si Power Technology: Devices and Applications

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.779-795

2017

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IEEE_Xplore

GaN HEMTs on Si with Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz

IEEE electron device letters, 2020-05, Vol.41 (5), p.1-1

2020

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IEEE_Xplore

Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

IEEE journal of emerging and selected topics in power electronics, 2016-09, Vol.4 (3), p.707-719

2016

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IEEE_Xplore

Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices

Advanced materials (Weinheim), 2017-12, Vol.29 (47), p.n/a

2017

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A Multiloop Method for Minimization of Parasitic Inductance in GaN-Based High-Frequency DC–DC Converter

IEEE transactions on power electronics, 2017-06, Vol.32 (6), p.4728-4740

2017

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IEEE_Xplore

High Voltage Vertical GaN p-n Diodes With Avalanche Capability

IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3067-3070

2013

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IEEE_Xplore

“Leaky Dielectric” Model for the Suppression of Dynamic R} in Carbon-Doped AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2017-07, Vol.64 (7), p.2826-2834

2017

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Surface morphology of AlGaN/GaN heterostructures grown on bulk GaN by MBE

Journal of crystal growth, 2018-10, Vol.500, p.1-4

2018

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GaN/NbN epitaxial semiconductor/superconductor heterostructures

Nature (London), 2018-03, Vol.555 (7695), p.183-189

2018

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GaN-On-Diamond HEMT Technology With TAVG = 176°C at PDC,max = 56 W/mm Measured by Transient Thermoreflectance Imaging

IEEE electron device letters, 2019-06, Vol.40 (6), p.881-884

2019

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IEEE_Xplore

Stress and dislocation control of GaN epitaxial films grown on Si substrates and their application in high-performance light-emitting diodes

Journal of alloys and compounds, 2019-01, Vol.771, p.1000-1008

2019

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Vertical GaN Power Devices: Device Principles and Fabrication Technologies-Part I

IEEE transactions on electron devices, 2021-07, Vol.68 (7), p.3200-3211

2021

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IEEE_Xplore

High-Voltage p-GaN HEMTs With OFF-State Blocking Capability After Gate Breakdown

IEEE electron device letters, 2019-04, Vol.40 (4), p.530-533

2019

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IEEE_Xplore

Large-Area In-Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET)

IEEE electron device letters, 2018-05, Vol.39 (5), p.711-714

2018

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IEEE_Xplore

High-Resolution Thermoreflectance Imaging Investigation of Self-Heating in AlGaN/GaN HEMTs on Si, SiC, and Diamond Substrates

IEEE transactions on electron devices, 2020-12, Vol.67 (12), p.5415-5420

2020

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IEEE_Xplore

Vertical GaN p-n Junction Diodes With High Breakdown Voltages Over 4 kV

IEEE electron device letters, 2015-11, Vol.36 (11), p.1180-1182

2015

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IEEE_Xplore

Intensity-Stabilized LEDs With Monolithically Integrated Photodetectors

IEEE transactions on industrial electronics (1982), 2019-09, Vol.66 (9), p.7426-7432

2019

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IEEE_Xplore

Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency

Applied physics letters, 2017-12, Vol.111 (26)

2017

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High Breakdown Voltage and High Current Injection Vertical GaN-on-GaN p-n Diodes With Extremely Low On-Resistance Fabricated on Ammonothermally Grown Bulk GaN Substrates

IEEE transactions on electron devices, 2022-11, Vol.69 (11), p.6255-6259

2022

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IEEE_Xplore

Si3 N4 Passivation and Side Illumination of High-Power Photoconductive Semiconductor Switch Based on Free-Standing SI-GaN

IEEE transactions on electron devices, 2023-03, Vol.70 (3), p.1128-1133

2023

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IEEE_Xplore

A Compact Double-Sided Cooling 650V/30A GaN Power Module With Low Parasitic Parameters

IEEE transactions on power electronics, 2022-01, Vol.37 (1), p.426-439

2022

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IEEE_Xplore

Low-Frequency Drain Noise Characterization and TCAD Physical Simulations of GaN HEMTs: Identification and Analysis of Physical Location of Traps

IEEE electron device letters, 2018-01, Vol.39 (1), p.107-110

2018

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IEEE_Xplore

Influence of AlN spacer and GaN cap layer in GaN heterostructure for RF HEMT applications

Microelectronic engineering, 2022-02, Vol.255, p.111724, Article 111724

2022

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Channel Temperature Analysis of GaN HEMTs With Nonlinear Thermal Conductivity

IEEE transactions on electron devices, 2015-03, Vol.62 (3), p.840-846

2015

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IEEE_Xplore

High-Speed Nonpolar InGaN/GaN LEDs for Visible-Light Communication

IEEE photonics technology letters, 2017-02, Vol.29 (4), p.381-384

2017

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IEEE_Xplore

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GaN-on-Si Power Technology: Devices and Applications

GaN HEMTs on Si with Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz

Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices

A Multiloop Method for Minimization of Parasitic Inductance in GaN-Based High-Frequency DC–DC Converter

High Voltage Vertical GaN p-n Diodes With Avalanche Capability

“Leaky Dielectric” Model for the Suppression of Dynamic R} in Carbon-Doped AlGaN/GaN HEMTs

Surface morphology of AlGaN/GaN heterostructures grown on bulk GaN by MBE

GaN/NbN epitaxial semiconductor/superconductor heterostructures

GaN-On-Diamond HEMT Technology With TAVG = 176°C at PDC,max = 56 W/mm Measured by Transient Thermoreflectance Imaging

Stress and dislocation control of GaN epitaxial films grown on Si substrates and their application in high-performance light-emitting diodes

Vertical GaN Power Devices: Device Principles and Fabrication Technologies-Part I

High-Voltage p-GaN HEMTs With OFF-State Blocking Capability After Gate Breakdown

Large-Area In-Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET)

High-Resolution Thermoreflectance Imaging Investigation of Self-Heating in AlGaN/GaN HEMTs on Si, SiC, and Diamond Substrates

Vertical GaN p-n Junction Diodes With High Breakdown Voltages Over 4 kV

Intensity-Stabilized LEDs With Monolithically Integrated Photodetectors

Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency

High Breakdown Voltage and High Current Injection Vertical GaN-on-GaN p-n Diodes With Extremely Low On-Resistance Fabricated on Ammonothermally Grown Bulk GaN Substrates

Si3 N4 Passivation and Side Illumination of High-Power Photoconductive Semiconductor Switch Based on Free-Standing SI-GaN

A Compact Double-Sided Cooling 650V/30A GaN Power Module With Low Parasitic Parameters

Low-Frequency Drain Noise Characterization and TCAD Physical Simulations of GaN HEMTs: Identification and Analysis of Physical Location of Traps

Influence of AlN spacer and GaN cap layer in GaN heterostructure for RF HEMT applications

Channel Temperature Analysis of GaN HEMTs With Nonlinear Thermal Conductivity

High-Speed Nonpolar InGaN/GaN LEDs for Visible-Light Communication

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