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GaN-on-Si Power Technology: Devices and Applications

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.779-795

2017

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Deadtime Effect on GaN-Based Synchronous Boost Converter and Analytical Model for Optimal Deadtime Selection

IEEE transactions on power electronics, 2016-01, Vol.31 (1), p.601-612

2016

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(Ultra)Wide-Bandgap Vertical Power FinFETs

IEEE transactions on electron devices, 2020-10, Vol.67 (10), p.3960-3971

2020

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Optically Induced Degradation Due to Thermally Activated Diffusion in GaN-Based InGaN/GaN MQW Solar Cells

IEEE transactions on electron devices, 2023-03, Vol.70 (3), p.1115-1120

2023

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AlGaN/GaN HEMT Based Biosensor for Detection of the HER2 Antigen Spiked in Human Serum

IEEE transactions on electron devices, 2022-08, Vol.69 (8), p.4527-4533

2022

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GaN HEMTs on Si with Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz

IEEE electron device letters, 2020-05, Vol.41 (5), p.1-1

2020

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Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

IEEE journal of emerging and selected topics in power electronics, 2016-09, Vol.4 (3), p.707-719

2016

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A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs

IEEE transactions on microwave theory and techniques, 2012-06, Vol.60 (6), p.1764-1783

2012

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Investigation on the Short-Circuit Oscillation of Cascode GaN HEMTs

IEEE transactions on power electronics, 2020-06, Vol.35 (6), p.6292-6300

2020

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Broadband GaN MMIC Doherty Power Amplifier Using Continuous-Mode Combining for 5G Sub-6 GHz Applications

IEEE journal of solid-state circuits, 2022-07, Vol.57 (7), p.2143-2154

2022

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Design of GaN-Based MHz Totem-Pole PFC Rectifier

IEEE journal of emerging and selected topics in power electronics, 2016-09, Vol.4 (3), p.799-807

2016

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Efficiency Drop in Green InGaN/GaN Light Emitting Diodes: The Role of Random Alloy Fluctuations

Physical review letters, 2016-01, Vol.116 (2), p.027401-027401, Article 027401

2016

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Normally OFF Trench CAVET With Active Mg-Doped GaN as Current Blocking Layer

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.805-808

2017

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A GaN Complementary FET Inverter With Excellent Noise Margins Monolithically Integrated With Power Gate-Injection HEMTs

IEEE transactions on electron devices, 2022-01, Vol.69 (1), p.51-56

2022

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Enhancing Bandwidth and Back-Off Range of Doherty Power Amplifier With Modified Load Modulation Network

IEEE transactions on microwave theory and techniques, 2021-04, Vol.69 (4), p.2291-2303

2021

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GaN-based complementary metal–oxide–semiconductor inverter with normally off Pch and Nch MOSFETs fabricated using polarisation-induced holes and electron channels

IET power electronics, 2018-04, Vol.11 (4), p.689-694

2018

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Polarization Properties of InGaN Vertical-Cavity Surface-Emitting Laser With Pipe Distributed Bragg Reflector

IEEE transactions on electron devices, 2022-01, Vol.69 (1), p.201-204

2022

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A High-Bandwidth Integrated Current Measurement for Detecting Switching Current of Fast GaN Devices

IEEE transactions on power electronics, 2018-07, Vol.33 (7), p.6199-6210

2018

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A Generic Theory for Design of Efficient Three-Stage Doherty Power Amplifiers

IEEE transactions on microwave theory and techniques, 2022-02, Vol.70 (2), p.1242-1253

2022

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High Breakdown Voltage in RF AlN/GaN/AlN Quantum Well HEMTs

IEEE electron device letters, 2019-08, Vol.40 (8), p.1293-1296

2019

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Bias Dependence of Non-Fourier Heat Spreading in GaN HEMTs

IEEE transactions on electron devices, 2023-02, Vol.70 (2), p.1-9

2023

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Volltext

High-Frequency High-Efficiency GaN-Based Interleaved CRM Bidirectional Buck/Boost Converter with Inverse Coupled Inductor

IEEE transactions on power electronics, 2016-06, Vol.31 (6), p.4343-4352

2016

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The emergence and prospects of deep-ultraviolet light-emitting diode technologies

Nature photonics, 2019-04, Vol.13 (4), p.233-244

2019

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Deep traps in GaN-based structures as affecting the performance of GaN devices

Materials science & engineering. R, Reports : a review journal, 2015-08, Vol.94, p.1-56

2015

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Investigation of the Trap States and V th Instability in Normally-Off GaN MIS-FETs With LPCVD SiNx/PEALD AlN Gate Dielectric Stack and In Situ H2/N2 Plasma Pretreatment

IEEE transactions on electron devices, 2023-11, Vol.70 (11), p.5563-5569

2023

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1 – 25 von 34.701

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GaN-on-Si Power Technology: Devices and Applications

Deadtime Effect on GaN-Based Synchronous Boost Converter and Analytical Model for Optimal Deadtime Selection

(Ultra)Wide-Bandgap Vertical Power FinFETs

Optically Induced Degradation Due to Thermally Activated Diffusion in GaN-Based InGaN/GaN MQW Solar Cells

AlGaN/GaN HEMT Based Biosensor for Detection of the HER2 Antigen Spiked in Human Serum

GaN HEMTs on Si with Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz

Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs

Investigation on the Short-Circuit Oscillation of Cascode GaN HEMTs

Broadband GaN MMIC Doherty Power Amplifier Using Continuous-Mode Combining for 5G Sub-6 GHz Applications

Design of GaN-Based MHz Totem-Pole PFC Rectifier

Efficiency Drop in Green InGaN/GaN Light Emitting Diodes: The Role of Random Alloy Fluctuations

Normally OFF Trench CAVET With Active Mg-Doped GaN as Current Blocking Layer

A GaN Complementary FET Inverter With Excellent Noise Margins Monolithically Integrated With Power Gate-Injection HEMTs

Enhancing Bandwidth and Back-Off Range of Doherty Power Amplifier With Modified Load Modulation Network

GaN-based complementary metal–oxide–semiconductor inverter with normally off Pch and Nch MOSFETs fabricated using polarisation-induced holes and electron channels

Polarization Properties of InGaN Vertical-Cavity Surface-Emitting Laser With Pipe Distributed Bragg Reflector

A High-Bandwidth Integrated Current Measurement for Detecting Switching Current of Fast GaN Devices

A Generic Theory for Design of Efficient Three-Stage Doherty Power Amplifiers

High Breakdown Voltage in RF AlN/GaN/AlN Quantum Well HEMTs

Bias Dependence of Non-Fourier Heat Spreading in GaN HEMTs

High-Frequency High-Efficiency GaN-Based Interleaved CRM Bidirectional Buck/Boost Converter with Inverse Coupled Inductor

The emergence and prospects of deep-ultraviolet light-emitting diode technologies

Deep traps in GaN-based structures as affecting the performance of GaN devices

Investigation of the Trap States and V th Instability in Normally-Off GaN MIS-FETs With LPCVD SiNx/PEALD AlN Gate Dielectric Stack and In Situ H2/N2 Plasma Pretreatment

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