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GaN-on-Si Power Technology: Devices and Applications

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.779-795

2017

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IEEE_Xplore

Electrical Characterization and Modeling of GaN HEMTs at Cryogenic Temperatures

IEEE transactions on electron devices, 2022-11, Vol.69 (11), p.6016-6022

2022

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IEEE_Xplore

Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors

IEEE transactions on electron devices, 2018-12, Vol.65 (12), p.5365-5372

2018

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IEEE_Xplore

Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3060-3066

2013

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IEEE_Xplore

Delta InN-InGaN Quantum Wells With AlGaN Interlayers for Long Wavelength Emission

IEEE journal of quantum electronics, 2022-04, Vol.58 (2), p.1-6

2022

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IEEE_Xplore

Deadtime Effect on GaN-Based Synchronous Boost Converter and Analytical Model for Optimal Deadtime Selection

IEEE transactions on power electronics, 2016-01, Vol.31 (1), p.601-612

2016

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IEEE_Xplore

Characterization of Threshold Voltage Instability Under Off-State Drain Stress and Its Impact on p-GaN HEMT Performance

IEEE journal of emerging and selected topics in power electronics, 2021-08, Vol.9 (4), p.4026-4035

2021

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IEEE_Xplore

p-Channel GaN Transistor Based on p-GaN/AlGaN/GaN on Si

IEEE electron device letters, 2019-07, Vol.40 (7), p.1036-1039

2019

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IEEE_Xplore

(Ultra)Wide-Bandgap Vertical Power FinFETs

IEEE transactions on electron devices, 2020-10, Vol.67 (10), p.3960-3971

2020

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IEEE_Xplore

AlGaN/GaN HEMT Based Biosensor for Detection of the HER2 Antigen Spiked in Human Serum

IEEE transactions on electron devices, 2022-08, Vol.69 (8), p.4527-4533

2022

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IEEE_Xplore

GaN HEMTs on Si with Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz

IEEE electron device letters, 2020-05, Vol.41 (5), p.1-1

2020

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IEEE_Xplore

Inverse Piezoelectric and Trap Effects With Temperature Dependence in AlGaN/GaN HEMTs Under Narrowband Microwave Pulses

IEEE transactions on electromagnetic compatibility, 2023-06, Vol.65 (3), p.794-803

2023

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IEEE_Xplore

Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

IEEE journal of emerging and selected topics in power electronics, 2016-09, Vol.4 (3), p.707-719

2016

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IEEE_Xplore

A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs

IEEE transactions on microwave theory and techniques, 2012-06, Vol.60 (6), p.1764-1783

2012

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IEEE_Xplore

GaN on Si Technologies for Power Switching Devices

IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3053-3059

2013

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IEEE_Xplore

Investigation on the Short-Circuit Oscillation of Cascode GaN HEMTs

IEEE transactions on power electronics, 2020-06, Vol.35 (6), p.6292-6300

2020

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IEEE_Xplore

300-GHz InAlN/GaN HEMTs With InGaN Back Barrier

IEEE electron device letters, 2011-11, Vol.32 (11), p.1525-1527

2011

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IEEE_Xplore

Design of GaN-Based MHz Totem-Pole PFC Rectifier

IEEE journal of emerging and selected topics in power electronics, 2016-09, Vol.4 (3), p.799-807

2016

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IEEE_Xplore

Charge Control in Schottky-Type p-GaN Gate HEMTs With Partially and Fully Depleted p-GaN Conditions

IEEE transactions on electron devices, 2022-05, Vol.69 (5), p.2262-2269

2022

Link zum Volltext
IEEE_Xplore

Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film

IEEE electron device letters, 2012-04, Vol.33 (4), p.516-518

2012

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IEEE_Xplore

A GaN Complementary FET Inverter With Excellent Noise Margins Monolithically Integrated With Power Gate-Injection HEMTs

IEEE transactions on electron devices, 2022-01, Vol.69 (1), p.51-56

2022

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IEEE_Xplore

AlGaN/GaN high electron mobility transistors with InGaN back-barriers

IEEE electron device letters, 2006-01, Vol.27 (1), p.13-15

2006

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IEEE_Xplore

Normally OFF Trench CAVET With Active Mg-Doped GaN as Current Blocking Layer

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.805-808

2017

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IEEE_Xplore

Radiation Effects in AlGaN/GaN HEMTs

IEEE transactions on nuclear science, 2022-05, Vol.69 (5), p.1-1

2022

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IEEE_Xplore

GaN-based complementary metal–oxide–semiconductor inverter with normally off Pch and Nch MOSFETs fabricated using polarisation-induced holes and electron channels

IET power electronics, 2018-04, Vol.11 (4), p.689-694

2018

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GaN-on-Si Power Technology: Devices and Applications

Electrical Characterization and Modeling of GaN HEMTs at Cryogenic Temperatures

Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors

Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

Delta InN-InGaN Quantum Wells With AlGaN Interlayers for Long Wavelength Emission

Deadtime Effect on GaN-Based Synchronous Boost Converter and Analytical Model for Optimal Deadtime Selection

Characterization of Threshold Voltage Instability Under Off-State Drain Stress and Its Impact on p-GaN HEMT Performance

p-Channel GaN Transistor Based on p-GaN/AlGaN/GaN on Si

(Ultra)Wide-Bandgap Vertical Power FinFETs

AlGaN/GaN HEMT Based Biosensor for Detection of the HER2 Antigen Spiked in Human Serum

GaN HEMTs on Si with Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz

Inverse Piezoelectric and Trap Effects With Temperature Dependence in AlGaN/GaN HEMTs Under Narrowband Microwave Pulses

Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs

GaN on Si Technologies for Power Switching Devices

Investigation on the Short-Circuit Oscillation of Cascode GaN HEMTs

300-GHz InAlN/GaN HEMTs With InGaN Back Barrier

Design of GaN-Based MHz Totem-Pole PFC Rectifier

Charge Control in Schottky-Type p-GaN Gate HEMTs With Partially and Fully Depleted p-GaN Conditions

Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film

A GaN Complementary FET Inverter With Excellent Noise Margins Monolithically Integrated With Power Gate-Injection HEMTs

AlGaN/GaN high electron mobility transistors with InGaN back-barriers

Normally OFF Trench CAVET With Active Mg-Doped GaN as Current Blocking Layer

Radiation Effects in AlGaN/GaN HEMTs

GaN-based complementary metal–oxide–semiconductor inverter with normally off Pch and Nch MOSFETs fabricated using polarisation-induced holes and electron channels

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