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InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors
IEEE transactions on electron devices, 2017-11, Vol.64 (11), p.4746-4751
2017
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Capacitance and Mobility Evaluation for Normally-Off Fully-Vertical GaN FinFETs
IEEE transactions on electron devices, 2023-08, Vol.70 (8), p.1-7
2023
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Tuning of Quasi-Vertical GaN FinFETs Fabricated on SiC Substrates
IEEE transactions on electron devices, 2023-05, Vol.70 (5), p.1-7
2023
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Radio-Frequency Characterization of Selectively Regrown InGaAs Lateral Nanowire MOSFETs
IEEE transactions on electron devices, 2014-12, Vol.61 (12), p.4078-4083
2014
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GaN-on-Si Power Technology: Devices and Applications
IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.779-795
2017
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The Past, the Present, and the Future of Ferroelectric Memories
IEEE transactions on electron devices, 2020-04, Vol.67 (4), p.1-10
2020
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Experimental Demonstration and Tolerancing of a Large-Scale Neural Network (165 000 Synapses) Using Phase-Change Memory as the Synaptic Weight Element
IEEE transactions on electron devices, 2015-11, Vol.62 (11), p.3498-3507
2015
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Critical Role of Interlayer in Hf0.5Zr0.5O2 Ferroelectric FET Nonvolatile Memory Performance
IEEE transactions on electron devices, 2018-06, Vol.65 (6), p.2461-2469
2018
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Phase-Change Memory-Towards a Storage-Class Memory
IEEE transactions on electron devices, 2017-11, Vol.64 (11), p.4374-4385
2017
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Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates
IEEE transactions on electron devices, 2013-09, Vol.60 (9), p.2761-2767
2013
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Vertical Power p-n Diodes Based on Bulk GaN
IEEE transactions on electron devices, 2015-02, Vol.62 (2), p.414-422
2015
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Current Status and Opportunities of Organic Thin-Film Transistor Technologies
IEEE transactions on electron devices, 2017-05, Vol.64 (5), p.1906-1921
2017
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Demonstration of L-Shaped Tunnel Field-Effect Transistors
IEEE transactions on electron devices, 2016-04, Vol.63 (4), p.1774-1778
2016
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High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty
IEEE transactions on electron devices, 2018-09, Vol.65 (9), p.3769-3774
2018
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Compact Modeling of RRAM Devices and Its Applications in 1T1R and 1S1R Array Design
IEEE transactions on electron devices, 2015-12, Vol.62 (12), p.4022-4028
2015
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3-D NAND Technology Achievements and Future Scaling Perspectives
IEEE transactions on electron devices, 2020-04, Vol.67 (4), p.1373-1381
2020
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Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs
IEEE transactions on electron devices, 2018-01, Vol.65 (1), p.45-50
2018
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3-D Memristor Crossbars for Analog and Neuromorphic Computing Applications
IEEE transactions on electron devices, 2017-01, Vol.64 (1), p.312-318
2017
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Prospects for Wide Bandgap and Ultrawide Bandgap CMOS Devices
IEEE transactions on electron devices, 2020-10, Vol.67 (10), p.4010-4020
2020
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“Leaky Dielectric” Model for the Suppression of Dynamic R} in Carbon-Doped AlGaN/GaN HEMTs
IEEE transactions on electron devices, 2017-07, Vol.64 (7), p.2826-2834
2017
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Basic Mechanisms of Threshold-Voltage Instability and Implications for Reliability Testing of SiC MOSFETs
IEEE transactions on electron devices, 2015-02, Vol.62 (2), p.316-323
2015
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A Review of Flexible OLEDs Toward Highly Durable Unusual Displays
IEEE transactions on electron devices, 2017-05, Vol.64 (5), p.1922-1931
2017
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Novel Attributes of a Dual Material Gate Nanoscale Tunnel Field-Effect Transistor
IEEE transactions on electron devices, 2011-02, Vol.58 (2), p.404-410
2011
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Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications
IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.2982-2996
2013
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HfO2-Based OxRAM Devices as Synapses for Convolutional Neural Networks
IEEE transactions on electron devices, 2015-08, Vol.62 (8), p.2494-2501
2015
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