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Novel Attributes of a Dual Material Gate Nanoscale Tunnel Field-Effect Transistor
IEEE transactions on electron devices, 2011-02, Vol.58 (2), p.404-410
2011
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Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth
IEEE transactions on electron devices, 2011-12, Vol.58 (12), p.4309-4317
2011
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All-Printed and Roll-to-Roll-Printable 13.56-MHz-Operated 1-bit RF Tag on Plastic Foils
IEEE transactions on electron devices, 2010-03, Vol.57 (3), p.571-580
2010
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A Compact SPICE Model for Carbon-Nanotube Field-Effect Transistors Including Nonidealities and Its Application-Part II: Full Device Model and Circuit Performance Benchmarking
IEEE transactions on electron devices, 2007-12, Vol.54 (12), p.3195-3205
2007
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Electrical Modeling and Characterization of Through Silicon via for Three-Dimensional ICs
IEEE transactions on electron devices, 2010-01, Vol.57 (1), p.256-262
2010
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Compact Modeling of Perpendicular-Anisotropy CoFeB/MgO Magnetic Tunnel Junctions
IEEE transactions on electron devices, 2012-03, Vol.59 (3), p.819-826
2012
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Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications
IEEE transactions on electron devices, 2006-02, Vol.53 (2), p.356-362
2006
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Gate Injection Transistor (GIT)-A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation
IEEE transactions on electron devices, 2007-12, Vol.54 (12), p.3393-3399
2007
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Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors
IEEE transactions on electron devices, 2011-09, Vol.58 (9), p.3042-3047
2011
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A Compact SPICE Model for Carbon-Nanotube Field-Effect Transistors Including Nonidealities and Its Application-Part I: Model of the Intrinsic Channel Region
IEEE transactions on electron devices, 2007-12, Vol.54 (12), p.3186-3194
2007
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Double-Gate Tunnel FET With High- \kappa Gate Dielectric
IEEE transactions on electron devices, 2007-07, Vol.54 (7), p.1725-1733
2007
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Performance Comparison Between p-i-n Tunneling Transistors and Conventional MOSFETs
IEEE transactions on electron devices, 2009-03, Vol.56 (3), p.456-465
2009
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Bipolar Charge-Plasma Transistor: A Novel Three Terminal Device
IEEE transactions on electron devices, 2012-04, Vol.59 (4), p.962-967
2012
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Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors
IEEE transactions on electron devices, 2013-07, Vol.60 (7), p.2224-2230
2013
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High-Performance Shielded Coplanar Waveguides for the Design of CMOS 60-GHz Bandpass Filters
IEEE transactions on electron devices, 2012-05, Vol.59 (5), p.1219-1226
2012
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Effect of Band-to-Band Tunneling on Junctionless Transistors
IEEE transactions on electron devices, 2012-04, Vol.59 (4), p.1023-1029
2012
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A Comparative Study of Different Physics-Based NBTI Models
IEEE transactions on electron devices, 2013-03, Vol.60 (3), p.901-916
2013
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Compact Modeling of Conducting-Bridge Random-Access Memory (CBRAM)
IEEE transactions on electron devices, 2011-05, Vol.58 (5), p.1352-1360
2011
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High-Bandwidth and High-Responsivity Top-Illuminated Germanium Photodiodes for Optical Interconnection
IEEE transactions on electron devices, 2013-03, Vol.60 (3), p.1183-1187
2013
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Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices
IEEE transactions on electron devices, 2009-02, Vol.56 (2), p.193-200
2009
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Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETs
IEEE transactions on electron devices, 2012-02, Vol.59 (2), p.292-301
2012
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Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices
IEEE transactions on electron devices, 2009-02, Vol.56 (2), p.186-192
2009
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High-Gain Fully Printed Organic Complementary Circuits on Flexible Plastic Foils
IEEE transactions on electron devices, 2011-10, Vol.58 (10), p.3587-3593
2011
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The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction-Diffusion to Switching Oxide Traps
IEEE transactions on electron devices, 2011-11, Vol.58 (11), p.3652-3666
2011
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State Dynamics and Modeling of Tantalum Oxide Memristors
IEEE transactions on electron devices, 2013-07, Vol.60 (7), p.2194-2202
2013
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