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Effect of 20 MeV Electron Radiation on Long Term Reliability of SiC Power MOSFETs
IEEE transactions on nuclear science, 2023-04, Vol.70 (4), p.1-1
2023
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Improving the Geiger Muller Counter Characteristics by Optimizing the Anode and Cathode Radius Dimensions
IEEE transactions on nuclear science, 2020-10, Vol.67 (10), p.2231-2237
2020
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An Updated Perspective of Single Event Gate Rupture and Single Event Burnout in Power MOSFETs
IEEE transactions on nuclear science, 2013-06, Vol.60 (3), p.1912-1928
2013
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High-Power Test of Two Prototype X-Band Accelerating Structures Based on SwissFEL Fabrication Technology
IEEE transactions on nuclear science, 2023-01, Vol.70 (1), p.1-19
2023
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Effects of Collector Profile on the SET Response of 130-nm High-Speed and High-Breakdown SiGe HBTs
IEEE transactions on nuclear science, 2023, p.1-1
2023
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Analysis and Mitigation of Single-Event Gate Rupture in VDMOS With Termination Structure
IEEE transactions on nuclear science, 2021-06, Vol.68 (6), p.1272-1278
2021
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Low-Energy Ion-Induced Single-Event Burnout in Gallium Oxide Schottky Diodes
IEEE transactions on nuclear science, 2023-04, Vol.70 (4), p.1-1
2023
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Numerical and Experimental Investigation of TID Radiation Effects on the Breakdown Voltage of 400-V SOI NLDMOSFETs
IEEE transactions on nuclear science, 2019-04, Vol.66 (4), p.710-715
2019
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Investigation on Total-Ionizing-Dose Radiation Response for 700 V Double-RESURF SOI LDMOS
IEEE transactions on nuclear science, 2022-05, Vol.69 (5), p.1134-1140
2022
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Impact of Electrical Stress and Neutron Irradiation on Reliability of Silicon Carbide Power MOSFET
IEEE transactions on nuclear science, 2020-07, Vol.67 (7), p.1365-1373
2020
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X-Ray and Proton Radiation Effects on 40 nm CMOS Physically Unclonable Function Devices
IEEE transactions on nuclear science, 2018-08, Vol.65 (8), p.1519-1524
2018
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A Model-Based Fast Protection System for High-Power RF Tube Amplifiers Used at the European XFEL Accelerator
IEEE transactions on nuclear science, 2017-06, Vol.64 (6), p.1203-1210
2017
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Effects of Proton Radiation on Noise Performance in Solid-State Photomultipliers
IEEE transactions on nuclear science, 2016-04, Vol.63 (2), p.1109-1116
2016
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Gate Voltage Contribution to Neutron-Induced SEB of Trench Gate Fieldstop IGBT
IEEE transactions on nuclear science, 2014-08, Vol.61 (4), p.1739-1746
2014
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Effect of Ion Energy on Power MOSFET's Oxide Reliability
IEEE transactions on nuclear science, 2012-08, Vol.59 (4), p.786-791
2012
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Assessment of the High Temperature Fission Chamber Technology for the French Fast Reactor Program
IEEE transactions on nuclear science, 2012-08, Vol.59 (4), p.1351-1359
2012
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Development of } }} Photodiodes for Use in Wide Band-Gap Solid-State Photomultipliers
IEEE transactions on nuclear science, 2013-04, Vol.60 (2), p.1175-1181
2013
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Semi-Empirical Model for SEGR Prediction
IEEE transactions on nuclear science, 2013-08, Vol.60 (4), p.2660-2665
2013
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Post-Irradiation-Gate-Stress on Power MOSFETs: Quantification of Latent Defects-Induced Reliability Degradation
IEEE transactions on nuclear science, 2013-12, Vol.60 (6), p.4166-4174
2013
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Simulation of Radiation Damage Effects on Planar Pixel Guard Ring Structure for ATLAS Inner Detector Upgrade
IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3236-3243
2009
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SEGR in SiO 2 -Si 3 N 4 Stacks
IEEE transactions on nuclear science, 2014-08, Vol.61 (4), p.1902-1908
2014
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Displacement damage-induced catastrophic second breakdown in silicon carbide Schottky power diodes
IEEE transactions on nuclear science, 2004-12, Vol.51 (6), p.3193-3200
2004
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The Role of Irradiation Bias on the Time-Dependent Dielectric Breakdown of 130-nm MOSFETs Exposed to X-rays
IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3244-3249
2009
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Gate Rupture in Ultra-Thin Gate Oxides Irradiated With Heavy Ions
IEEE transactions on nuclear science, 2009-08, Vol.56 (4), p.1964-1970
2009
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A Statistical Approach to Microdose Induced Degradation in FinFET Devices
IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3285-3292
2009
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