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High-brightness InGaN blue, green and yellow light-emitting diodes with quantum well structures

Japanese Journal of Applied Physics, 1995-07, Vol.34 (7A), p.L797-L799

1995

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InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices

Japanese Journal of Applied Physics, 1997-12, Vol.36 (12A), p.L1568-L1571

1997

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InGaN-based multi-quantum-well-structure laser diodes

Japanese Journal of Applied Physics, 1996-01, Vol.35 (1B), p.L74-L76

1996

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GaInNAs : A novel material for long-wavelength-range laser diodes with excellent high-temperature performance

Japanese Journal of Applied Physics, 1996, Vol.35 (2B), p.1273-1275

1996

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Fabrication of gold nanodot array using anodic porous alumina as an evaporation mask

Japanese Journal of Applied Physics, 1996-01, Vol.35 (1B), p.L126-L129

1996

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Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters

Japanese Journal of Applied Physics, 1997-09, Vol.36 (9A), p.5393-5408

1997

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Superbright green InGaN single-quantum-well-structure light-emitting diodes

Japanese Journal of Applied Physics, 1995-10, Vol.34 (10B), p.L1332-L1335

1995

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Towards prevention and prediction of infectious diseases with virus sterilization using ultraviolet light and low-temperature plasma and bio-sensing devices for health and hygiene care

Japanese Journal of Applied Physics, 2022-01, Vol.61 (SA), p.SA0808

2022

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Theory of semiconductor superjunction devices

Japanese Journal of Applied Physics, 1997, Vol.36 (10), p.6254-6262

FUJIHIRA, T

1997

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P-GaN/N-InGaN/N-GaN double-heterostructure blue-light-emitting diodes

Japanese Journal of Applied Physics, 1993-01, Vol.32 (1A/B), p.L8-L11

1993

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High-power, long-lifetime InGaN multi-quantum-well-structure laser diodes

Japanese Journal of Applied Physics, 1997-08, Vol.36 (8B), p.L1059-L1061

1997

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Analysis of the transformation of mechanical impact energy to electric energy using piezoelectric vibrator

JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE REV PAP, 1996, Vol.35 (5B), p.3267-3273

1996

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Smart-cut : A new silicon on insulator material technology based on hydrogen implantation and wafer bonding

Japanese journal of applied physics, 1997-03, Vol.36 (3B), p.1636-1641

1997

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Performance of a novel optical compensation film based on negative birefringence of discotic compound for wide-viewing-angle twisted-nematic liquid-crystal displays

Japanese Journal of Applied Physics, 1997-01, Vol.36 (1A), p.143-147

1997

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16.0% Efficient thin-film CdS/CdTe solar cells

Japanese Journal of Applied Physics, 1997, Vol.36 (10), p.6304-6305

1997

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Kinetic analysis of non-thermal plasmas used for pollution control

Japanese Journal of Applied Physics, 1997, Vol.36 (7B), p.5007-5017

1997

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Surface-induced parallel alignment of liquid crystals by linearly polymerized photopolymers

JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE, 1992-07, Vol.31 (7), p.2155-2164

1992

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A novel preparation method of organic microcrystals

Japanese Journal of Applied Physics, 1992-08, Vol.31 (8A), p.L1132-L1134

1992

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Visible-light electroluminescent diodes utilizing poly(3-alkylthiophene)

Japanese Journal of Applied Physics, 1991-11, Vol.30 (11B), p.L1938-L1940

1991

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Influence of the emission site on the running durability of organic electroluminescent devices

Japanese Journal of Applied Physics, 1995-07, Vol.34 (7A), p.L824-L826

1995

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High-speed response of uni-traveling-carrier photodiodes

Japanese Journal of Applied Physics, 1997, Vol.36 (10), p.6263-6268

1997

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P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI)

Japanese Journal of Applied Physics, 1989-12, Vol.28 (12), p.L2112-L2114

1989

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Mechanism of resist pattern collapse during development process

Japanese Journal of Applied Physics, 1993-12, Vol.32 (12B), p.6059-6064

1993

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White-light-emitting organic electroluminescent device using lanthanide complexes

Japanese Journal of Applied Physics, 1996-03, Vol.35 (3B), p.L394-L396

1996

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High-power GaN P-N junction blue-light-emitting diodes

Japanese Journal of Applied Physics, 1991-12, Vol.30 (12A), p.L1998-L2001

1991

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High-brightness InGaN blue, green and yellow light-emitting diodes with quantum well structures

InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices

InGaN-based multi-quantum-well-structure laser diodes

GaInNAs : A novel material for long-wavelength-range laser diodes with excellent high-temperature performance

Fabrication of gold nanodot array using anodic porous alumina as an evaporation mask

Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters

Superbright green InGaN single-quantum-well-structure light-emitting diodes

Towards prevention and prediction of infectious diseases with virus sterilization using ultraviolet light and low-temperature plasma and bio-sensing devices for health and hygiene care

Theory of semiconductor superjunction devices

P-GaN/N-InGaN/N-GaN double-heterostructure blue-light-emitting diodes

High-power, long-lifetime InGaN multi-quantum-well-structure laser diodes

Analysis of the transformation of mechanical impact energy to electric energy using piezoelectric vibrator

Smart-cut : A new silicon on insulator material technology based on hydrogen implantation and wafer bonding

Performance of a novel optical compensation film based on negative birefringence of discotic compound for wide-viewing-angle twisted-nematic liquid-crystal displays

16.0% Efficient thin-film CdS/CdTe solar cells

Kinetic analysis of non-thermal plasmas used for pollution control

Surface-induced parallel alignment of liquid crystals by linearly polymerized photopolymers

A novel preparation method of organic microcrystals

Visible-light electroluminescent diodes utilizing poly(3-alkylthiophene)

Influence of the emission site on the running durability of organic electroluminescent devices

High-speed response of uni-traveling-carrier photodiodes

P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI)

Mechanism of resist pattern collapse during development process

White-light-emitting organic electroluminescent device using lanthanide complexes

High-power GaN P-N junction blue-light-emitting diodes

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