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The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM

Applied physics letters, 2017-03, Vol.110 (10)

2017

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Enhanced switching stability in Ta2O5 resistive RAM by fluorine doping

Applied physics letters, 2017-08, Vol.111 (9)

2017

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Stimulated emission at 340 nm from AlGaN multiple quantum well grown using high temperature AlN buffer technologies on sapphire

Applied physics letters, 2009-10, Vol.95 (16), p.161904-161904-3

2009

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An assessment of the mobility degradation induced by remote charge scattering

Applied physics letters, 2009-12, Vol.95 (26), p.263502-263502-3

2009

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On the interface states generated under different stress conditions

Applied physics letters, 2001-11, Vol.79 (19), p.3092-3094

2001

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Threshold voltage instability of p -channel metal-oxide-semiconductor field effect transistors with hafnium based dielectrics

Applied physics letters, 2007-04, Vol.90 (14), p.143502-143502-3

2007

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Impact of gate materials on positive charge formation in HfO2∕SiO2 stacks

Applied physics letters, 2006-07, Vol.89 (2)

2006

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Impact of different defects on the kinetics of negative bias temperature instability of hafnium stacks

Applied physics letters, 2008-01, Vol.92 (1), p.013501-013501-3

2008

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p-type delta-doped layers in silicon : structural and electronic properties

Applied physics letters, 1990-10, Vol.57 (16), p.1648-1650

1990

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Impact of gate materials on positive charge formation in Hf O 2 ∕ Si O 2 stacks

Applied physics letters, 2006-07, Vol.89 (2), p.023507-023507-3

2006

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Why is the band model not contradictory to molecular theory in organic electroluminescence?

Applied physics letters, 2005-02, Vol.86 (6), p.061911-061911-3

2005

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Silver substrates for surface enhanced Raman scattering: Correlation between nanostructure and Raman scattering enhancement

Applied physics letters, 2014-06, Vol.104 (24), p.243107

2014

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Optical properties of large-area polycrystalline chemical vapor deposited graphene by spectroscopic ellipsometry

Applied physics letters, 2010-12, Vol.97 (25), p.253110-253110-3

2010

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Quantum dense metrology by an SU(2)-in-SU(1,1) nested interferometer

Applied physics letters, 2020-07, Vol.117 (2)

2020

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Polarization dependent state to polarization independent state change in THz metamaterials

Applied physics letters, 2011-11, Vol.99 (22), p.221102-221102-3

2011

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Thermally annealed wafer-scale h-BN films grown on sapphire substrate by molecular beam epitaxy

Applied physics letters, 2020-04, Vol.116 (14)

2020

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On the integrated p-type region free of electron blocking layer for AlGaN-based deep-ultraviolet light emitting diodes

Applied physics letters, 2023-12, Vol.123 (26)

2023

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Damage free integration of ultralow-k dielectrics by template replacement approach

Applied physics letters, 2015-08, Vol.107 (9)

2015

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Grain boundaries as preferential sites for resistive switching in the HfO 2 resistive random access memory structures

Applied physics letters, 2012-03, Vol.100 (12), p.123508-123508-4

2012

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Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures

Applied physics letters, 2012-03, Vol.100 (12)

2012

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Investigation of the electrocaloric effect in a PbMg2/3Nb1/3O3-PbTiO3 relaxor thin film

Applied physics letters, 2009-11, Vol.95 (18)

2009

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Bias-dependent tunneling anisotropic magnetoresistance in antiferromagnetic Pd-doped FeRh-based junctions

Applied physics letters, 2021-12, Vol.119 (24)

2021

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Phase transformation induced by lattice distortion in multiprincipal component CoCrFeNiCuxAl1−x solid-solution alloys

Applied physics letters, 2008-06, Vol.92 (24), p.241917

2008

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Improved Ohmic contacts to plasma etched high Al fraction n-AlGaN by active surface pretreatment

Applied physics letters, 2021-05, Vol.118 (22)

2021

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High performance of AlGaN deep-ultraviolet light emitting diodes due to improved vertical carrier transport by delta-accelerating quantum barriers

Applied physics letters, 2019-04, Vol.114 (17)

2019

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The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM

Enhanced switching stability in Ta2O5 resistive RAM by fluorine doping

Stimulated emission at 340 nm from AlGaN multiple quantum well grown using high temperature AlN buffer technologies on sapphire

An assessment of the mobility degradation induced by remote charge scattering

On the interface states generated under different stress conditions

Threshold voltage instability of p -channel metal-oxide-semiconductor field effect transistors with hafnium based dielectrics

Impact of gate materials on positive charge formation in HfO2∕SiO2 stacks

Impact of different defects on the kinetics of negative bias temperature instability of hafnium stacks

p-type delta-doped layers in silicon : structural and electronic properties

Impact of gate materials on positive charge formation in Hf O 2 ∕ Si O 2 stacks

Why is the band model not contradictory to molecular theory in organic electroluminescence?

Silver substrates for surface enhanced Raman scattering: Correlation between nanostructure and Raman scattering enhancement

Optical properties of large-area polycrystalline chemical vapor deposited graphene by spectroscopic ellipsometry

Quantum dense metrology by an SU(2)-in-SU(1,1) nested interferometer

Polarization dependent state to polarization independent state change in THz metamaterials

Thermally annealed wafer-scale h-BN films grown on sapphire substrate by molecular beam epitaxy

On the integrated p-type region free of electron blocking layer for AlGaN-based deep-ultraviolet light emitting diodes

Damage free integration of ultralow-k dielectrics by template replacement approach

Grain boundaries as preferential sites for resistive switching in the HfO 2 resistive random access memory structures

Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures

Investigation of the electrocaloric effect in a PbMg2/3Nb1/3O3-PbTiO3 relaxor thin film

Bias-dependent tunneling anisotropic magnetoresistance in antiferromagnetic Pd-doped FeRh-based junctions

Phase transformation induced by lattice distortion in multiprincipal component CoCrFeNiCuxAl1−x solid-solution alloys

Improved Ohmic contacts to plasma etched high Al fraction n-AlGaN by active surface pretreatment

High performance of AlGaN deep-ultraviolet light emitting diodes due to improved vertical carrier transport by delta-accelerating quantum barriers

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