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Medical Biometrics

Transactions of Japanese Society for Medical and Biological Engineering, 2015, Vol.53(Supplement), pp.S96_01-S96_01

David, Zhang

2015

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A comparative assessment of clinical efficiency between premium heat-activated copper nickel-titanium and superelastic nickel-titanium archwires during initial orthodontic alignment in adolescents: A randomized clinical trial

Australasian orthodontic journal, 2020-05, Vol.36 (1), p.123-124

David Zhang

2020

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A comparative assessment of clinical efficiency between premium heat-activated copper nickel-titanium and superelastic nickel-titanium archwires during initial orthodontic alignment in adolescents: A randomized clinical trial

Australasian orthodontic journal, 2020-05, Vol.36 (1), p.123-124

David Zhang

2020

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Dual-gate manipulation of a HfZrOx-based MoS field-effect transistor towards enhanced neural network applications

Nanoscale, 2022-12, Vol.15 (1), p.313-32

2022

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Post-annealing optimization of the heteroepitaxial La-doped SrSnO integrated on silicon ALD

Nanoscale, 2023-06, Vol.15 (21), p.9432-9439

2023

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High optoelectronic performance of a local-back-gate ReS/ReSe heterojunction phototransistor with hafnium oxide dielectric

Nanoscale, 2021-09, Vol.13 (34), p.14435-14441

2021

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Superhigh energy storage density on-chip capacitors with ferroelectric HfZrO/antiferroelectric HfZrO bilayer nanofilms fabricated by plasma-enhanced atomic layer deposition

Nanoscale advances, 2022-10, Vol.4 (21), p.4648-4657

2022

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Modulated wafer-scale WS films based on atomic-layer-deposition for various device applications

RSC advances, 2023-05, Vol.13 (22), p.14841-14848

2023

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CMOS back-end compatible memristors for digital and neuromorphic computing applications

Materials horizons, 2021-11, Vol.8 (12), p.3345-3355

2021

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Light response behaviors of amorphous In-Ga-Zn-O thin-film transistors interfacial hydrogen doping modulation

RSC advances, 2020-01, Vol.1 (6), p.3572-3578

2020

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Flexible boron nitride-based memristor for digital and analogue neuromorphic computing applications

Materials horizons, 2021-02, Vol.8 (2), p.538-546

2021

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The Effect of Inhibitors on the Electrochemical Deposition of Copper Through-silicon Via and its CMP Process Optimization

Journal of semiconductor technology and science, 2017, Vol.17 (3), p.319-325

2017

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Effect of rapid thermal annealing on optical and interfacial propertiesof atomic-layer-deposited Lu 2 O 3 films on Si (100)

Applied physics letters, 2008-10, Vol.93 (15), p.152906-152906-3

2008

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Multistacked Al 2 O 3 ∕ Hf O 2 ∕ Si O 2 tunnel layer for high-density nonvolatile memory application

Applied physics letters, 2007-07, Vol.91 (2), p.022908-022908-3

2007

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Electrical characteristics and conduction mechanisms of metal-insulator-metal capacitors with nanolaminated Al 2 O 3 - Hf O 2 dielectrics

Applied physics letters, 2008-09, Vol.93 (9), p.092909-092909-3

2008

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Chemical, optical, and electrical characterization of Ga2O3 thin films grown by plasma-enhanced atomic layer deposition

Current applied physics, 2019-02, p.72-81

2019

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Observation of near interface oxide traps in single crystalline Nd 2 O 3 on Si(111) by quasistatic C - V method

Applied physics letters, 2008-08, Vol.93 (8), p.083509-083509-3

2008

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Spectroscopic ellipsometry study of thin NiO films grownon Si (100) by atomic layer deposition

Applied physics letters, 2008-06, Vol.92 (22), p.222907-222907-3

2008

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Effective passivation of slow interface states at the interface of single crystalline Gd 2 O 3 and Si(100)

Applied physics letters, 2008-04, Vol.92 (15), p.152908-152908-3

2008

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Effects of N H 3 plasma pretreatment on initial reactions of atomic layer deposition TaN barrier layer on SiOC dielectric

Applied physics letters, 2007-12, Vol.91 (24), p.242903-242903-3

2007

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High-temperature conduction behaviors of HfO 2 / TaN -basedmetal-insulator-metal capacitors

Journal of applied physics, 2007-10, Vol.102 (7), p.073706-073706-5

2007

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Quantum chemical study of the initial surface reactions of Hf O 2 atomic layer deposition on the hydroxylated Ga As ( 001 ) - 4 × 2 surface

Applied physics letters, 2006-10, Vol.89 (16), p.162905-162905-3

2006

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Characterization of atomic-layer-deposited Al 2 O 3 ∕ Ga As interface improved by N H 3 plasma pretreatment

Applied physics letters, 2006-10, Vol.89 (15), p.152910-152910-3

2006

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First principles calculations of oxygen vacancy passivation by fluorinein hafnium oxide

Applied physics letters, 2006-10, Vol.89 (15), p.152904-152904-3

2006

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Mechanism of interfacial layer suppression after performing surface Al ( C H 3 ) 3 pretreatment during atomic layer deposition of Al 2 O 3

Journal of applied physics, 2006-11, Vol.100 (10), p.106101-106101-3

2006

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Medical Biometrics

A comparative assessment of clinical efficiency between premium heat-activated copper nickel-titanium and superelastic nickel-titanium archwires during initial orthodontic alignment in adolescents: A randomized clinical trial

A comparative assessment of clinical efficiency between premium heat-activated copper nickel-titanium and superelastic nickel-titanium archwires during initial orthodontic alignment in adolescents: A randomized clinical trial

Dual-gate manipulation of a HfZrOx-based MoS field-effect transistor towards enhanced neural network applications

Post-annealing optimization of the heteroepitaxial La-doped SrSnO integrated on silicon ALD

High optoelectronic performance of a local-back-gate ReS/ReSe heterojunction phototransistor with hafnium oxide dielectric

Superhigh energy storage density on-chip capacitors with ferroelectric HfZrO/antiferroelectric HfZrO bilayer nanofilms fabricated by plasma-enhanced atomic layer deposition

Modulated wafer-scale WS films based on atomic-layer-deposition for various device applications

CMOS back-end compatible memristors for digital and neuromorphic computing applications

Light response behaviors of amorphous In-Ga-Zn-O thin-film transistors interfacial hydrogen doping modulation

Flexible boron nitride-based memristor for digital and analogue neuromorphic computing applications

The Effect of Inhibitors on the Electrochemical Deposition of Copper Through-silicon Via and its CMP Process Optimization

Effect of rapid thermal annealing on optical and interfacial propertiesof atomic-layer-deposited Lu 2 O 3 films on Si (100)

Multistacked Al 2 O 3 ∕ Hf O 2 ∕ Si O 2 tunnel layer for high-density nonvolatile memory application

Electrical characteristics and conduction mechanisms of metal-insulator-metal capacitors with nanolaminated Al 2 O 3 - Hf O 2 dielectrics

Chemical, optical, and electrical characterization of Ga2O3 thin films grown by plasma-enhanced atomic layer deposition

Observation of near interface oxide traps in single crystalline Nd 2 O 3 on Si(111) by quasistatic C - V method

Spectroscopic ellipsometry study of thin NiO films grownon Si (100) by atomic layer deposition

Effective passivation of slow interface states at the interface of single crystalline Gd 2 O 3 and Si(100)

Effects of N H 3 plasma pretreatment on initial reactions of atomic layer deposition TaN barrier layer on SiOC dielectric

High-temperature conduction behaviors of HfO 2 / TaN -basedmetal-insulator-metal capacitors

Quantum chemical study of the initial surface reactions of Hf O 2 atomic layer deposition on the hydroxylated Ga As ( 001 ) - 4 × 2 surface

Characterization of atomic-layer-deposited Al 2 O 3 ∕ Ga As interface improved by N H 3 plasma pretreatment

First principles calculations of oxygen vacancy passivation by fluorinein hafnium oxide

Mechanism of interfacial layer suppression after performing surface Al ( C H 3 ) 3 pretreatment during atomic layer deposition of Al 2 O 3

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