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Phase transformation and mechanical properties of as-cast Ti41.5Zr41.5Ni17 quasicrystalline composites

Journal of non-crystalline solids, 2014-06, Vol.392-393, p.6-10

2014

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Catalytic synthesis and photoluminescence of gallium nitride nanowires

Chemical physics letters, 2003-01, Vol.367 (1), p.136-140

2003

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Quantitative evaluation of concentration polarization in the permeation of VOCs/water mixtures through PDMS membrane using model equation

Desalination, 2008-12, Vol.233 (1), p.303-309

2008

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The tri-methyl-Sb flow and the surfactant time effect on InGaAsN/GaAs-strained MQWs grown by MOCVD

Journal of crystal growth, 2004-10, Vol.270 (3-4), p.340-345

2004

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Bulk GaN single crystal growth and characterization using various alkali metal flux

Journal of crystal growth, 2006-07, Vol.292 (2), p.216-220

2006

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Absence of local-potential fluctuation effects in Si-doped InxGa1-xN epilayers studied by optical characterizations

Journal of crystal growth, 2005-04, Vol.277 (1-4), p.133-137

2005

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Application-related properties of giant magnetostrictive thin films

Journal of magnetism and magnetic materials, 2002-02, Vol.239 (1), p.546-550

2002

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Growth temperature dependence on the formation of carbon-induced Ge quantum dots

Thin solid films, 2000-07, Vol.369 (1-2), p.96-99

2000

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Photoluminescence and persistent photoconductivity of AlxGa1-xN /GaN heterostructures

Applied physics. A, Materials science & processing, 2007-01, Vol.86 (4), p.521-524

2007

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Residual stress change by thermal annealing in amorphous Sm−Fe−B thin films

Journal of magnetism and magnetic materials, 2002-02, Vol.239 (1), p.570-572

2002

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Photocurrent measurements on GaAs1-xNx epilayers grown by metalorganic chemical vapor deposition

Journal of crystal growth, 2004-01, Vol.260 (3-4), p.336-342

2004

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Properties of InGaN/GaN quantum wells and blue light emitting diodes

Journal of luminescence, 2002-10, Vol.99 (3), p.265-272

2002

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Photoluminescence and photocurrent studies of p-type GaN with various thermal treatments

Journal of crystal growth, 2002-02, Vol.235 (1), p.49-54

2002

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Influence of Sb doping on In0.2Ga0.8As0.98N0.02/GaAs strained multiquantum wells grown by metalorganic chemical vapor deposition

Journal of crystal growth, 2004-03, Vol.263 (1-4), p.156-160

2004

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Time-resolved photoluminescence spectroscopy of InAs quantum dots on InP with various InAlGaAs barrier thicknesses

Physica. E, Low-dimensional systems & nanostructures, 2005-02, Vol.26 (1), p.207-211

2005

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Observation of field-driven blue shift in δ-doped Si n–i–p–i multiple quantum wells

Solid state communications, 1999-01, Vol.111 (11), p.641-645

1999

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Effect of Isoelectronic In Doping on Deep Levels in GaN Grown by MOCVD

Physica status solidi. B. Basic research, 2001-11, Vol.228 (1), p.231-234

2001

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Electrical transport properties of highly Mg-doped GaN epilayers grown by MOCVD

Journal of crystal growth, 2000-12, Vol.221 (1), p.734-738

2000

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Comparative analysis of characteristics of Si, Mg, and undoped GaN

Journal of crystal growth, 2000-03, Vol.210 (4), p.505-510

2000

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Effect of gas feeding methods on optical properties of GaN grown by rapid thermal chemical vapor deposition reactor

Journal of electronic materials, 1999-08, Vol.28 (8), p.970-974

1999

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Triangular Quantum Well of InGaN-GaN for Active Layer of Light-Emitting Device

Physica status solidi. A, Applied research, 2002-08, Vol.192 (2), p.430-434

2002

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Exotic meson production in the f1(1285)π− system observed in the reaction π−p→ηπ+π−π−p at 18 GeV/c

Physics letters. B, 2004-08, Vol.595 (1-4), p.109-117

2004

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Growth temperature dependence of substitutional carbon incorporation in Si1-yCy alloys and Si1-yCy/Si multiple quantum wells

Journal of crystal growth, 2000-02, Vol.209 (4), p.789-794

2000

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A distributed scalable SiGe power device large signal model based on MEXTRAM 504

2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers, 2004, p.175-178

2004

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Phase transformation and mechanical properties of as-cast Ti41.5Zr41.5Ni17 quasicrystalline composites

Catalytic synthesis and photoluminescence of gallium nitride nanowires

Quantitative evaluation of concentration polarization in the permeation of VOCs/water mixtures through PDMS membrane using model equation

The tri-methyl-Sb flow and the surfactant time effect on InGaAsN/GaAs-strained MQWs grown by MOCVD

Bulk GaN single crystal growth and characterization using various alkali metal flux

Absence of local-potential fluctuation effects in Si-doped InxGa1-xN epilayers studied by optical characterizations

Application-related properties of giant magnetostrictive thin films

Growth temperature dependence on the formation of carbon-induced Ge quantum dots

Photoluminescence and persistent photoconductivity of AlxGa1-xN /GaN heterostructures

Residual stress change by thermal annealing in amorphous Sm−Fe−B thin films

Photocurrent measurements on GaAs1-xNx epilayers grown by metalorganic chemical vapor deposition

Properties of InGaN/GaN quantum wells and blue light emitting diodes

Photoluminescence and photocurrent studies of p-type GaN with various thermal treatments

Influence of Sb doping on In0.2Ga0.8As0.98N0.02/GaAs strained multiquantum wells grown by metalorganic chemical vapor deposition

Time-resolved photoluminescence spectroscopy of InAs quantum dots on InP with various InAlGaAs barrier thicknesses

Observation of the π(1800) and π2(1880) mesons in ηηπ− decay

Observation of field-driven blue shift in δ-doped Si n–i–p–i multiple quantum wells

Effect of Isoelectronic In Doping on Deep Levels in GaN Grown by MOCVD

Electrical transport properties of highly Mg-doped GaN epilayers grown by MOCVD

Comparative analysis of characteristics of Si, Mg, and undoped GaN

Effect of gas feeding methods on optical properties of GaN grown by rapid thermal chemical vapor deposition reactor

Triangular Quantum Well of InGaN-GaN for Active Layer of Light-Emitting Device

Exotic meson production in the f1(1285)π− system observed in the reaction π−p→ηπ+π−π−p at 18 GeV/c

Growth temperature dependence of substitutional carbon incorporation in Si1-yCy alloys and Si1-yCy/Si multiple quantum wells

A distributed scalable SiGe power device large signal model based on MEXTRAM 504

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