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A 250 mV 7.5 μW 61 dB SNDR SC ΔΣ Modulator Using Near-Threshold-Voltage-Biased Inverter Amplifiers in 130 nm CMOS

IEEE journal of solid-state circuits, 2012-03, Vol.47 (3), p.709-721

2012

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A Fully Integrated CMOS 800-mW Four-Phase Semiconstant ON/OFF-Time Step-Down Converter

IEEE transactions on power electronics, 2011-02, Vol.26 (2), p.326-333

2011

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Analog Building Blocks for Organic Smart Sensor Systems in Organic Thin-Film Transistor Technology on Flexible Plastic Foil

IEEE journal of solid-state circuits, 2012-07, Vol.47 (7), p.1712-1720

2012

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A 1.75-GHz polar modulated CMOS RF power amplifier for GSM-EDGE

IEEE journal of solid-state circuits, 2005-12, Vol.40 (12), p.2598-2608

2005

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A 60-GHz CMOS VCO Using Capacitance-Splitting and Gate-Drain Impedance-Balancing Techniques

IEEE transactions on microwave theory and techniques, 2011-02, Vol.59 (2), p.406-413

2011

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A 2.45-GHz 0.13-μm CMOS PA with parallel amplification

IEEE journal of solid-state circuits, 2007-03, Vol.42 (3), p.551-562

2007

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A high-speed 850-nm optical receiver front-end in 0.18-μm CMOS

IEEE journal of solid-state circuits, 2006-07, Vol.41 (7), p.1606-1614

2006

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A 130 nm CMOS 6-bit Full Nyquist 3 GS/s DAC

IEEE journal of solid-state circuits, 2008-11, Vol.43 (11), p.2396-2403

2008

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A 10-bit 250-MS/s binary-weighted current-steering DAC

IEEE journal of solid-state circuits, 2006-02, Vol.41 (2), p.320-329

2006

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A 1-V 140-μW 88-dB audio sigma-delta modulator in 90-nm CMOS

IEEE journal of solid-state circuits, 2004-11, Vol.39 (11), p.1809-1818

2004

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A Polar Modulator Using Self-Oscillating Amplifiers and an Injection-Locked Upconversion Mixer

IEEE journal of solid-state circuits, 2008-02, Vol.43 (2), p.460-467

2008

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An Externally Trimmed Integrated DC Current Regulator Insensitive to Conducted EMI

IEEE transactions on electromagnetic compatibility, 2008-02, Vol.50 (1), p.63-70

2008

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1-1-1 MASH ΔΣ Time-to-Digital Converters With 6 ps Resolution and Third-Order Noise-Shaping

IEEE journal of solid-state circuits, 2012, Vol.47 (9), p.2093-2106

2012

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A 1.65 W Fully Integrated 90 nm Bulk CMOS Capacitive DC―DC Converter With Intrinsic Charge Recycling: SPECIAL ISSUE ON POWER SUPPLY CHIP

IEEE transactions on power electronics, 2013, Vol.28 (9), p.4327-4334

2013

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Compact Model for Organic Thin-Film Transistor

IEEE electron device letters, 2010-03, Vol.31 (3), p.210-212

2010

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Trustworthy Genetic Programming-Based Synthesis of Analog Circuit Topologies Using Hierarchical Domain-Specific Building Blocks

IEEE transactions on evolutionary computation, 2011-08, Vol.15 (4), p.557-570

2011

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A high-voltage output driver in a 2.5-V 0.25-μm CMOS technology

IEEE journal of solid-state circuits, 2005-03, Vol.40 (3), p.576-583

2005

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Monolithic Capacitive DC-DC Converter With Single Boundary-ultiphase Control and Voltage Domain Stacking in 90 nm CMOS: SPECIAL ISSUE ON THE 36th EUROPEAN SOLID-STATE CIRCUITS CONFERENCE (ESSCIRC)

IEEE journal of solid-state circuits, 2011, Vol.46 (7), p.1715-1727

2011

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An EMI Resisting LIN Driver in 0.35-micron High-Voltage CMOS

IEEE journal of solid-state circuits, 2007-07, Vol.42 (7), p.1574-1582

2007

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Design and Analysis of a 90 nm mm-Wave Oscillator Using Inductive-Division LC Tank: Special Issue on the 34TH EUROPEAN SOLID-STATE CIRCUITS CONFERENCE (ESSCIRC)

IEEE journal of solid-state circuits, 2009, Vol.44 (7), p.1950-1958

2009

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Low-IF topologies for high-performance analog front ends of fully integrated receivers

IEEE transactions on circuits and systems. 2, Analog and digital signal processing, 1998-03, Vol.45 (3), p.269-282

1998

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A 265 VRMS Mains Interface Integrated in 0.35 μm CMOS

IEEE journal of solid-state circuits, 2013, Vol.48 (7), p.1558-1564

2013

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A Single-Bit 500 kHz-10 MHz Multimode Power-Performance Scalable 83-to-67 dB DR CTΔ∑ for SDR in 90 nm Digital CMOS

IEEE journal of solid-state circuits, 2010, Vol.45 (6), p.1159-1171

2010

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Erratum to A 66 μW 86 ppm/°C Fully-Integrated 6 MHz Wienbridge Oscillator With a 172 dB Phase Noise FOM

IEEE journal of solid-state circuits, 2009-10, Vol.44 (10), p.2868-2868

2009

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A 66 μW 86 ppm/°C Fully-Integrated 6 MHz Wienbridge Oscillator With a 172 dB Phase Noise FOM: Special Issue on the 34TH EUROPEAN SOLID-STATE CIRCUITS CONFERENCE (ESSCIRC)

IEEE journal of solid-state circuits, 2009, Vol.44 (7), p.1990-2001

2009

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A 250 mV 7.5 μW 61 dB SNDR SC ΔΣ Modulator Using Near-Threshold-Voltage-Biased Inverter Amplifiers in 130 nm CMOS

A Fully Integrated CMOS 800-mW Four-Phase Semiconstant ON/OFF-Time Step-Down Converter

Analog Building Blocks for Organic Smart Sensor Systems in Organic Thin-Film Transistor Technology on Flexible Plastic Foil

A 1.75-GHz polar modulated CMOS RF power amplifier for GSM-EDGE

A 60-GHz CMOS VCO Using Capacitance-Splitting and Gate-Drain Impedance-Balancing Techniques

A 2.45-GHz 0.13-μm CMOS PA with parallel amplification

A high-speed 850-nm optical receiver front-end in 0.18-μm CMOS

A 130 nm CMOS 6-bit Full Nyquist 3 GS/s DAC

A 10-bit 250-MS/s binary-weighted current-steering DAC

A 1-V 140-μW 88-dB audio sigma-delta modulator in 90-nm CMOS

A Polar Modulator Using Self-Oscillating Amplifiers and an Injection-Locked Upconversion Mixer

An Externally Trimmed Integrated DC Current Regulator Insensitive to Conducted EMI

1-1-1 MASH ΔΣ Time-to-Digital Converters With 6 ps Resolution and Third-Order Noise-Shaping

A 1.65 W Fully Integrated 90 nm Bulk CMOS Capacitive DC―DC Converter With Intrinsic Charge Recycling: SPECIAL ISSUE ON POWER SUPPLY CHIP

Compact Model for Organic Thin-Film Transistor

Trustworthy Genetic Programming-Based Synthesis of Analog Circuit Topologies Using Hierarchical Domain-Specific Building Blocks

A high-voltage output driver in a 2.5-V 0.25-μm CMOS technology

Monolithic Capacitive DC-DC Converter With Single Boundary-ultiphase Control and Voltage Domain Stacking in 90 nm CMOS: SPECIAL ISSUE ON THE 36th EUROPEAN SOLID-STATE CIRCUITS CONFERENCE (ESSCIRC)

An EMI Resisting LIN Driver in 0.35-micron High-Voltage CMOS

Design and Analysis of a 90 nm mm-Wave Oscillator Using Inductive-Division LC Tank: Special Issue on the 34TH EUROPEAN SOLID-STATE CIRCUITS CONFERENCE (ESSCIRC)

Low-IF topologies for high-performance analog front ends of fully integrated receivers

A 265 VRMS Mains Interface Integrated in 0.35 μm CMOS

A Single-Bit 500 kHz-10 MHz Multimode Power-Performance Scalable 83-to-67 dB DR CTΔ∑ for SDR in 90 nm Digital CMOS

Erratum to A 66 μW 86 ppm/°C Fully-Integrated 6 MHz Wienbridge Oscillator With a 172 dB Phase Noise FOM

A 66 μW 86 ppm/°C Fully-Integrated 6 MHz Wienbridge Oscillator With a 172 dB Phase Noise FOM: Special Issue on the 34TH EUROPEAN SOLID-STATE CIRCUITS CONFERENCE (ESSCIRC)

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