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A Kinetic Monte Carlo study on the dynamic switching properties of electrochemical metallization RRAMs during the SET process
2010 International Conference on Simulation of Semiconductor Processes and Devices, 2010, p.19-22
2010
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Quantum transport of Dirac fermions in graphene field effect transistors
2010 International Conference on Simulation of Semiconductor Processes and Devices, 2010, p.9-12
2010
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Analytical models of effective DOS, saturation velocity and high-field mobility for SiGe HBTs numerical simulation
2010 International Conference on Simulation of Semiconductor Processes and Devices, 2010, p.279-282
2010
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Solving Boltzmann Transport Equation without Monte-Carlo algorithms - new methods for industrial TCAD applications
2010 International Conference on Simulation of Semiconductor Processes and Devices, 2010, p.293-296
2010
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Three-dimensional simulation of focused ion beam processing using the level set method
2010 International Conference on Simulation of Semiconductor Processes and Devices, 2010, p.49-52
2010
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Multiphysics modeling of PCM devices for scaling investigation
2010 International Conference on Simulation of Semiconductor Processes and Devices, 2010, p.265-268
2010
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Investigation of charge loss mechanisms in planar and raised STI charge trapping flash memories
2010 International Conference on Simulation of Semiconductor Processes and Devices, 2010, p.233-236
2010
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A novel algorithm for the solution of charge transport equations in MANOS devices including charge trapping in alumina and temperature effects
2010 International Conference on Simulation of Semiconductor Processes and Devices, 2010, p.229-232
2010
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Optimal design of III-V heterostructure MOSFETs
2010 International Conference on Simulation of Semiconductor Processes and Devices, 2010, p.103-106
2010
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Inclusion of the Pauli principle in a deterministic Boltzmann equation solver for semiconductor devices
2010 International Conference on Simulation of Semiconductor Processes and Devices, 2010, p.135-138
2010
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Improved impact-ionization modelling and validation with pn-junction diodes
2010 International Conference on Simulation of Semiconductor Processes and Devices, 2010, p.287-290
2010
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Statistical simulation of metal-gate work-function fluctuation in high-κ/metal-gate devices
2010 International Conference on Simulation of Semiconductor Processes and Devices, 2010, p.153-156
2010
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Numerical investigation of the total SOA of trench field-plate LDMOS devices
2010 International Conference on Simulation of Semiconductor Processes and Devices, 2010, p.111-114
2010
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A novel approach to the statistical generation of non-normal distributed PSP compact model parameters using a nonlinear power method
2010 International Conference on Simulation of Semiconductor Processes and Devices, 2010, p.125-128
2010
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Modeling and fast simulation of RF-MEMS switches within standard IC design frameworks
2010 International Conference on Simulation of Semiconductor Processes and Devices, 2010, p.317-320
2010
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Modeling gate-pitch scaling impact on stress-induced mobility and external resistance for 20nm-node MOSFETs
2010 International Conference on Simulation of Semiconductor Processes and Devices, 2010, p.79-82
2010
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Si nanowire device and its modeling
2010 International Conference on Simulation of Semiconductor Processes and Devices, 2010, p.63-66
2010
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Compact modeling of Fe-FET and implications on variation-insensitive design
2010 International Conference on Simulation of Semiconductor Processes and Devices, 2010, p.247-250
2010
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Coupling of equipment simulation and feature-scale profile simulation for dry-etching of polysilicon gate lines
2010 International Conference on Simulation of Semiconductor Processes and Devices, 2010, p.57-60
2010
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Future high density memories for computing applications: Device behavior and modeling challenges
2010 International Conference on Simulation of Semiconductor Processes and Devices, 2010, p.223-226
2010
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Coupled Monte Carlo simulation of transient electron-phonon transport in nanoscale devices
2010 International Conference on Simulation of Semiconductor Processes and Devices, 2010, p.89-92
2010
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Stochastic modeling hysteresis and resistive switching in bipolar oxide-based memory
2010 International Conference on Simulation of Semiconductor Processes and Devices, 2010, p.237-240
2010
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TCAD simulation vs. experimental results in FDSOI technology: From advanced mobility modeling to 6T-SRAM cell characteristics prediction
2010 International Conference on Simulation of Semiconductor Processes and Devices, 2010, p.283-286
2010
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Topography simulation of BiCS memory hole etching modeled by elementary experiments of SiO2 and Si etching
2010 International Conference on Simulation of Semiconductor Processes and Devices, 2010, p.45-48
2010
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Simulation of line-edge roughness effects in silicon nanowire MOSFETs
2010 International Conference on Simulation of Semiconductor Processes and Devices, 2010, p.187-190
2010
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