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Energy-efficient Mott activation neuron for full-hardware implementation of neural networks

Nature nanotechnology, 2021-06, Vol.16 (6), p.680-687

2021

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Synaptic electronics: materials, devices and applications

Nanotechnology, 2013-09, Vol.24 (38), p.382001-382001

2013

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An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation

IEEE transactions on electron devices, 2011-08, Vol.58 (8), p.2729-2737

2011

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IEEE_Xplore

The Impact of Resistance Drift of Phase Change Memory (PCM) Synaptic Devices on Artificial Neural Network Performance

IEEE electron device letters, 2019-08, Vol.40 (8), p.1325-1328

2019

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IEEE_Xplore

Transformation of Cortex-wide Emergent Properties during Motor Learning

Neuron (Cambridge, Mass.), 2017-05, Vol.94 (4), p.880-890.e8

2017

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Artificial optic-neural synapse for colored and color-mixed pattern recognition

Nature communications, 2018-11, Vol.9 (1), p.5106-8, Article 5106

2018

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Neuroinspired unsupervised learning and pruning with subquantum CBRAM arrays

Nature communications, 2018-12, Vol.9 (1), p.5312-11, Article 5312

2018

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Transparent and flexible low noise graphene electrodes for simultaneous electrophysiology and neuroimaging

Nature communications, 2014-10, Vol.5 (1), p.5259-5259, Article 5259

2014

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A Soft-Pruning Method Applied During Training of Spiking Neural Networks for In-memory Computing Applications

Frontiers in neuroscience, 2019-04, Vol.13, p.405-405

2019

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Bioresorbable silicon electronics for transient spatiotemporal mapping of electrical activity from the cerebral cortex

Nature materials, 2016-07, Vol.15 (7), p.782-791

2016

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Roadmap on material-function mapping for photonic-electronic hybrid neural networks

APL materials, 2019-10, Vol.7 (10), p.100903-100903-13

2019

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A Compact Closed-Loop Optogenetics System Based on Artifact-Free Transparent Graphene Electrodes

Frontiers in neuroscience, 2018-03, Vol.12, p.132-132

2018

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Hippocampal-Cortical Memory Trace Transfer and Reactivation Through Cell-Specific Stimulus and Spontaneous Background Noise

Frontiers in computational neuroscience, 2019-09, Vol.13, p.67-67

2019

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Brain-like associative learning using a nanoscale non-volatile phase change synaptic device array

Frontiers in neuroscience, 2014-07, Vol.8, p.205-205

2014

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E-Cannula reveals anatomical diversity in sharp-wave ripples as a driver for the recruitment of distinct hippocampal assemblies

Cell reports (Cambridge), 2022-10, Vol.41 (1), p.111453-111453, Article 111453

2022

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Multi-level, forming and filament free, bulk switching trilayer RRAM for neuromorphic computing at the edge

Nature communications, 2024-04, Vol.15 (1), p.3492-3492

2024

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Low-Energy Robust Neuromorphic Computation Using Synaptic Devices

IEEE transactions on electron devices, 2012-12, Vol.59 (12), p.3489-3494

2012

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IEEE_Xplore

High-Mobility Ge N-MOSFETs and Mobility Degradation Mechanisms

IEEE transactions on electron devices, 2011-01, Vol.58 (1), p.59-66

2011

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IEEE_Xplore

Integration of Ag-CBRAM crossbars and Mott ReLU neurons for efficient implementation of deep neural networks in hardware

Neuromorphic computing and engineering, 2023-09, Vol.3 (3), p.34007

2023

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Implantable optoelectronic probes for in vivo optogenetics

Journal of neural engineering, 2017-06, Vol.14 (3), p.031001-031001

2017

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The Effect of Donor/Acceptor Nature of Interface Traps on Ge MOSFET Characteristics

IEEE transactions on electron devices, 2011-04, Vol.58 (4), p.1015-1022

2011

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IEEE_Xplore

Characteristics of surface states and charge neutrality level in Ge

Applied physics letters, 2009-12, Vol.95 (25), p.252101-252101-3

2009

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High performance germanium N+∕P and P+∕N junction diodes formed at low Temperature (⩽380°C) using metal-induced dopant activation

Applied physics letters, 2008-11, Vol.93 (19)

2008

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Drift-Enhanced Unsupervised Learning of Handwritten Digits in Spiking Neural Network With PCM Synapses

IEEE electron device letters, 2018-11, Vol.39 (11), p.1768-1771

2018

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IEEE_Xplore

Effect of interfacial oxide on Ge MOSCAP and N-MOSFET characteristics

Microelectronic engineering, 2011-12, Vol.88 (12), p.3428-3431

2011

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Energy-efficient Mott activation neuron for full-hardware implementation of neural networks

Synaptic electronics: materials, devices and applications

An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation

The Impact of Resistance Drift of Phase Change Memory (PCM) Synaptic Devices on Artificial Neural Network Performance

Transformation of Cortex-wide Emergent Properties during Motor Learning

Artificial optic-neural synapse for colored and color-mixed pattern recognition

Neuroinspired unsupervised learning and pruning with subquantum CBRAM arrays

Transparent and flexible low noise graphene electrodes for simultaneous electrophysiology and neuroimaging

A Soft-Pruning Method Applied During Training of Spiking Neural Networks for In-memory Computing Applications

Bioresorbable silicon electronics for transient spatiotemporal mapping of electrical activity from the cerebral cortex

Roadmap on material-function mapping for photonic-electronic hybrid neural networks

A Compact Closed-Loop Optogenetics System Based on Artifact-Free Transparent Graphene Electrodes

Hippocampal-Cortical Memory Trace Transfer and Reactivation Through Cell-Specific Stimulus and Spontaneous Background Noise

Brain-like associative learning using a nanoscale non-volatile phase change synaptic device array

E-Cannula reveals anatomical diversity in sharp-wave ripples as a driver for the recruitment of distinct hippocampal assemblies

Multi-level, forming and filament free, bulk switching trilayer RRAM for neuromorphic computing at the edge

Low-Energy Robust Neuromorphic Computation Using Synaptic Devices

High-Mobility Ge N-MOSFETs and Mobility Degradation Mechanisms

Integration of Ag-CBRAM crossbars and Mott ReLU neurons for efficient implementation of deep neural networks in hardware

Implantable optoelectronic probes for in vivo optogenetics

The Effect of Donor/Acceptor Nature of Interface Traps on Ge MOSFET Characteristics

Characteristics of surface states and charge neutrality level in Ge

High performance germanium N+∕P and P+∕N junction diodes formed at low Temperature (⩽380°C) using metal-induced dopant activation

Drift-Enhanced Unsupervised Learning of Handwritten Digits in Spiking Neural Network With PCM Synapses

Effect of interfacial oxide on Ge MOSCAP and N-MOSFET characteristics

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