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Nanometer-Scale Oxide Thin Film Transistor with Potential for High-Density Image Sensor Applications

ACS applied materials & interfaces, 2011-01, Vol.3 (1), p.1-6

2011

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Modeling for multilevel switching in oxide-based bipolar resistive memory

Nanotechnology, 2012-06, Vol.23 (22), p.225702-1-5

2012

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Theoretical studies on distribution of resistances in multilevel bipolar oxide resistive memory by Monte Carlo method

Applied physics letters, 2013-09, Vol.103 (11)

2013

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First-principles study on multiferroicity in the Cr 2 Ge 2 Te 6 /In 2 Se 3 heterostructure influenced by finite strains

Physical chemistry chemical physics : PCCP, 2021-11, Vol.23 (45), p.25925-25932

Hur, Ji-Hyun

2021

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First-principles study on multiferroicity in the CrGeTe/InSe heterostructure influenced by finite strains

Physical chemistry chemical physics : PCCP, 2021-11, Vol.23 (45), p.25925-25932

Hur, Ji-Hyun

2021

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Multi-level switching of triple-layered TaOx RRAM with excellent reliability for storage class memory

2012 Symposium on VLSI Technology (VLSIT), 2012, p.71-72

2012

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Bi-layered RRAM with unlimited endurance and extremely uniform switching

2011 Symposium on VLSI Technology - Digest of Technical Papers, 2011, p.52-53

2011

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A Monte Carlo simulation for bipolar resistive memory switching in large band-gap oxides

Applied physics letters, 2015-11, Vol.107 (20)

2015

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First principles study of the strain effect on band gap of λ phase Ta2O5

Computational materials science, 2019-06, Vol.164, p.17-21

Hur, Ji-Hyun

2019

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Modeling for bipolar resistive memory switching in transition-metal oxides

Physical review. B, Condensed matter and materials physics, 2010-10, Vol.82 (15), Article 155321

2010

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Tetracosanoic acids produced by 3-ketoacyl-CoA synthase 17 are required for synthesizing seed coat suberin in Arabidopsis

Journal of experimental botany, 2024-03, Vol.75 (6), p.1767

2024

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Dislocation scatterings in p-type Si1−xGex under weak electric field

Nanotechnology, 2015-12, Vol.26 (49)

2015

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A ZrO 2 /TaO x Bilayer Oxide Resistive Memory Exhibiting Near All-Around Performances

Journal of physical chemistry. C, 2020-07, Vol.124 (30), p.16624-16628

2020

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Quantitative analysis of charge trapping and classification of sub-gap states in MoS 2 TFT by pulse I-V method

Nanotechnology, 2018-04, Vol.29 (17), p.175704

2018

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Dislocation scatterings in p-type Si sub(1-x)Ge sub(x) under weak electric field

Nanotechnology, 2015-12, Vol.26 (49), p.1-5

2015

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Dislocation scatterings in p-type Si 1− x Ge x under weak electric field

Nanotechnology, 2015-12, Vol.26 (49), p.495201

2015

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Universal Memory Characteristics and Degradation Features of ZrO 2 ‐Based Bipolar Resistive Memory

Advanced electronic materials, 2020-08, Vol.6 (8)

2020

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A theoretical modeling of photocurrent generation and decay in layered MoS 2 thin-film transistor photosensors

Journal of physics. D, Applied physics, 2017-02, Vol.50 (6), p.65105

2017

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P22. Daily Caffeinated Soda Intake in Children is associated With Neurocognitive Vulnerabilities of Substance Misuse and Predicts Greater Alcohol Use in 12 Months

Biological psychiatry (1969), 2022-05, Vol.91 (9), p.S96-S97

2022

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First principles study of oxygen vacancy states in monoclinic ZrO2: Interpretation of conduction characteristics

Journal of applied physics, 2012-12, Vol.112 (11)

2012

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Phase transformation induced resistive switching behavior in Al/Cu 2 Se/Pt

Journal of physics. D, Applied physics, 2017-04, Vol.50 (13), p.135301

2017

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Quantum Simulation Study on Performance Optimization of GaSb/InAs nanowire Tunneling FET

Journal of semiconductor technology and science, 2016, Vol.16 (5), p.630-634

2016

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Dislocation scatterings in p-type Si(1-x)Ge(x) under weak electric field

Nanotechnology, 2015-12, Vol.26 (49), p.495201-495201

2015

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Model for the Operation of a Monolayer MoS 2 Thin-Film Transistor with Charges Trapped near the Channel Interface

Physical review applied, 2017-04, Vol.7 (4), Article 044030

2017

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Tuning of ionic mobility to improve the resistive switching behavior of Zn-doped CeO 2

Scientific reports, 2019-12, Vol.9 (1), p.19387

2019

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Nanometer-Scale Oxide Thin Film Transistor with Potential for High-Density Image Sensor Applications

Modeling for multilevel switching in oxide-based bipolar resistive memory

Theoretical studies on distribution of resistances in multilevel bipolar oxide resistive memory by Monte Carlo method

First-principles study on multiferroicity in the Cr 2 Ge 2 Te 6 /In 2 Se 3 heterostructure influenced by finite strains

First-principles study on multiferroicity in the CrGeTe/InSe heterostructure influenced by finite strains

Multi-level switching of triple-layered TaOx RRAM with excellent reliability for storage class memory

Bi-layered RRAM with unlimited endurance and extremely uniform switching

A Monte Carlo simulation for bipolar resistive memory switching in large band-gap oxides

First principles study of the strain effect on band gap of λ phase Ta2O5

Modeling for bipolar resistive memory switching in transition-metal oxides

Tetracosanoic acids produced by 3-ketoacyl-CoA synthase 17 are required for synthesizing seed coat suberin in Arabidopsis

Dislocation scatterings in p-type Si1−xGex under weak electric field

A ZrO 2 /TaO x Bilayer Oxide Resistive Memory Exhibiting Near All-Around Performances

Quantitative analysis of charge trapping and classification of sub-gap states in MoS 2 TFT by pulse I-V method

Dislocation scatterings in p-type Si sub(1-x)Ge sub(x) under weak electric field

Dislocation scatterings in p-type Si 1− x Ge x under weak electric field

Universal Memory Characteristics and Degradation Features of ZrO 2 ‐Based Bipolar Resistive Memory

A theoretical modeling of photocurrent generation and decay in layered MoS 2 thin-film transistor photosensors

P22. Daily Caffeinated Soda Intake in Children is associated With Neurocognitive Vulnerabilities of Substance Misuse and Predicts Greater Alcohol Use in 12 Months

First principles study of oxygen vacancy states in monoclinic ZrO2: Interpretation of conduction characteristics

Phase transformation induced resistive switching behavior in Al/Cu 2 Se/Pt

Quantum Simulation Study on Performance Optimization of GaSb/InAs nanowire Tunneling FET

Dislocation scatterings in p-type Si(1-x)Ge(x) under weak electric field

Model for the Operation of a Monolayer MoS 2 Thin-Film Transistor with Charges Trapped near the Channel Interface

Tuning of ionic mobility to improve the resistive switching behavior of Zn-doped CeO 2

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