UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 465

Sortiert nach

Fast transient charging behavior of HfInZnO thin-film transistor

Applied physics letters, 2015-08, Vol.107 (9)

2015

Link zum Volltext

Verfügbarkeit prüfen

Theoretical study of potential performance of armchair graphene nanoribbon field effect transistors: Dependence on channel dimensions and contact resistance

Journal of applied physics, 2017-12, Vol.122 (23)

2017

Link zum Volltext

Verfügbarkeit prüfen

First-principles study on multiferroicity in the Cr2Ge2Te6/In2Se3 heterostructure influenced by finite strains

Physical chemistry chemical physics : PCCP, 2021-11, Vol.23 (45), p.25925-25932

Hur, Ji-Hyun

2021

Link zum Volltext

Verfügbarkeit prüfen

Theoretical studies on oxygen vacancy migration energy barrier in the orthorhombic λ phase Ta2O5

Computational materials science, 2019-11, Vol.169, p.109148, Article 109148

Hur, Ji-Hyun

2019

Link zum Volltext

Verfügbarkeit prüfen

Mechanism of resistance distribution properties in oxide-based resistance switching nanodevice

Physics letters. A, 2019-03, Vol.383 (11), p.1182-1186

Hur, Ji-Hyun

2019

Link zum Volltext

Verfügbarkeit prüfen

Tunable resistive switching of vertical ReSe2/graphene hetero-structure enabled by Schottky barrier height and DUV light

Journal of alloys and compounds, 2021-02, Vol.855, p.157310, Article 157310

2021

Link zum Volltext

Verfügbarkeit prüfen

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

Nature materials, 2011-08, Vol.10 (8), p.625-630

2011

Link zum Volltext

Verfügbarkeit prüfen

Quantum Simulation Study on Performance Optimization of GaSb/InAs nanowire Tunneling FET

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2016, 16(5), 71, pp.630-634

2016

Link zum Volltext

Verfügbarkeit prüfen

A theoretical modeling of photocurrent generation and decay in layered MoS2 thin-film transistor photosensors

Journal of physics. D, Applied physics, 2017-01, Vol.50 (6)

2017

Link zum Volltext

Verfügbarkeit prüfen

Pulse I-V characterization of a nano-crystalline oxide device with sub-gap density of states

Nanotechnology, 2016-05, Vol.27 (21), p.215203-215203

2016

Link zum Volltext

Verfügbarkeit prüfen

Effect of oxygen stoichiometry on the threshold switching of RF-sputtered NbOx (x = 2.0–2.5) films

Materials research bulletin, 2021-12, Vol.144, p.111492, Article 111492

2021

Link zum Volltext

Verfügbarkeit prüfen

Phase transformation induced resistive switching behavior in Al/Cu2Se/Pt

Journal of physics. D, Applied physics, 2017-02, Vol.50 (13)

2017

Link zum Volltext

Verfügbarkeit prüfen

Dislocation effects in FinFETs for different III-V compound semiconductors

Journal of physics. D, Applied physics, 2016-04, Vol.49 (15), p.155101-155105

2016

Link zum Volltext

Verfügbarkeit prüfen

Theoretical studies on distribution of resistances in multilevel bipolar oxide resistive memory by Monte Carlo method

Applied physics letters, 2013-09, Vol.103 (11)

2013

Link zum Volltext

Verfügbarkeit prüfen

First-principles study on multiferroicity in the Cr 2 Ge 2 Te 6 /In 2 Se 3 heterostructure influenced by finite strains

Physical chemistry chemical physics : PCCP, 2021-11, Vol.23 (45), p.25925-25932

Hur, Ji-Hyun

2021

Link zum Volltext

Verfügbarkeit prüfen

First-principles study on multiferroicity in the CrGeTe/InSe heterostructure influenced by finite strains

Physical chemistry chemical physics : PCCP, 2021-11, Vol.23 (45), p.25925-25932

Hur, Ji-Hyun

2021

Link zum Volltext

Verfügbarkeit prüfen

Multi-level switching of triple-layered TaOx RRAM with excellent reliability for storage class memory

2012 Symposium on VLSI Technology (VLSIT), 2012, p.71-72

2012

Link zum Volltext
Volltext

Bi-layered RRAM with unlimited endurance and extremely uniform switching

2011 Symposium on VLSI Technology - Digest of Technical Papers, 2011, p.52-53

2011

Link zum Volltext
Volltext

A Monte Carlo simulation for bipolar resistive memory switching in large band-gap oxides

Applied physics letters, 2015-11, Vol.107 (20)

2015

Link zum Volltext

Verfügbarkeit prüfen

First principles study of the strain effect on band gap of λ phase Ta2O5

Computational materials science, 2019-06, Vol.164, p.17-21

Hur, Ji-Hyun

2019

Link zum Volltext

Verfügbarkeit prüfen

Modeling for bipolar resistive memory switching in transition-metal oxides

Physical review. B, Condensed matter and materials physics, 2010-10, Vol.82 (15), Article 155321

2010

Link zum Volltext

Verfügbarkeit prüfen

Tetracosanoic acids produced by 3-ketoacyl-CoA synthase 17 are required for synthesizing seed coat suberin in Arabidopsis

Journal of experimental botany, 2024-03, Vol.75 (6), p.1767

2024

Link zum Volltext

Verfügbarkeit prüfen

A ZrO 2 /TaO x Bilayer Oxide Resistive Memory Exhibiting Near All-Around Performances

Journal of physical chemistry. C, 2020-07, Vol.124 (30), p.16624-16628

2020

Link zum Volltext

Verfügbarkeit prüfen

Quantitative analysis of charge trapping and classification of sub-gap states in MoS 2 TFT by pulse I-V method

Nanotechnology, 2018-04, Vol.29 (17), p.175704

2018

Link zum Volltext

Verfügbarkeit prüfen

Dislocation scatterings in p-type Si sub(1-x)Ge sub(x) under weak electric field

Nanotechnology, 2015-12, Vol.26 (49), p.1-5

2015

Link zum Volltext

Verfügbarkeit prüfen

1 – 25 von 465

Suche als RSS-Feed

Aktive Filter

ThemaScience & Technology - Other Topics

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(422)
Mit Volltextzugriff
(444)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(2)
... seit 90 Tagen
(6)

Menü

Weitere Dienste

Einstellungen

Fast transient charging behavior of HfInZnO thin-film transistor

Theoretical study of potential performance of armchair graphene nanoribbon field effect transistors: Dependence on channel dimensions and contact resistance

First-principles study on multiferroicity in the Cr2Ge2Te6/In2Se3 heterostructure influenced by finite strains

Theoretical studies on oxygen vacancy migration energy barrier in the orthorhombic λ phase Ta2O5

Mechanism of resistance distribution properties in oxide-based resistance switching nanodevice

Tunable resistive switching of vertical ReSe2/graphene hetero-structure enabled by Schottky barrier height and DUV light

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

Quantum Simulation Study on Performance Optimization of GaSb/InAs nanowire Tunneling FET

A theoretical modeling of photocurrent generation and decay in layered MoS2 thin-film transistor photosensors

Pulse I-V characterization of a nano-crystalline oxide device with sub-gap density of states

Effect of oxygen stoichiometry on the threshold switching of RF-sputtered NbOx (x = 2.0–2.5) films

Phase transformation induced resistive switching behavior in Al/Cu2Se/Pt

Dislocation effects in FinFETs for different III-V compound semiconductors

Theoretical studies on distribution of resistances in multilevel bipolar oxide resistive memory by Monte Carlo method

First-principles study on multiferroicity in the Cr 2 Ge 2 Te 6 /In 2 Se 3 heterostructure influenced by finite strains

First-principles study on multiferroicity in the CrGeTe/InSe heterostructure influenced by finite strains

Multi-level switching of triple-layered TaOx RRAM with excellent reliability for storage class memory

Bi-layered RRAM with unlimited endurance and extremely uniform switching

A Monte Carlo simulation for bipolar resistive memory switching in large band-gap oxides

First principles study of the strain effect on band gap of λ phase Ta2O5

Modeling for bipolar resistive memory switching in transition-metal oxides

Tetracosanoic acids produced by 3-ketoacyl-CoA synthase 17 are required for synthesizing seed coat suberin in Arabidopsis

A ZrO 2 /TaO x Bilayer Oxide Resistive Memory Exhibiting Near All-Around Performances

Quantitative analysis of charge trapping and classification of sub-gap states in MoS 2 TFT by pulse I-V method

Dislocation scatterings in p-type Si sub(1-x)Ge sub(x) under weak electric field

Aktive Filter

Suchergebnisse filtern