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First principles study of oxygen vacancy activation energy barrier in zirconia-based resistive memory

Scientific reports, 2020-03, Vol.10 (1), p.5405-5405, Article 5405

Hur, Ji-Hyun

2020

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The origin of the exceptionally low activation energy of oxygen vacancy in tantalum pentoxide based resistive memory

Scientific reports, 2019-11, Vol.9 (1), p.17019-9, Article 17019

Hur, Ji-Hyun

2019

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Fast transient charging behavior of HfInZnO thin-film transistor

Applied physics letters, 2015-08, Vol.107 (9)

2015

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Tuning of ionic mobility to improve the resistive switching behavior of Zn-doped CeO2

Scientific reports, 2019-12, Vol.9 (1), p.1-10, Article 19387

2019

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A study on mechanism of resistance distribution characteristics of oxide-based resistive memory

Scientific reports, 2019-01, Vol.9 (1), p.302-302, Article 302

2019

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Theoretical study of potential performance of armchair graphene nanoribbon field effect transistors: Dependence on channel dimensions and contact resistance

Journal of applied physics, 2017-12, Vol.122 (23)

2017

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A plasma-treated chalcogenide switch device for stackable scalable 3D nanoscale memory

Nature communications, 2013, Vol.4 (1), p.2629-2629, Article 2629

2013

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First-principles study on multiferroicity in the Cr2Ge2Te6/In2Se3 heterostructure influenced by finite strains

Physical chemistry chemical physics : PCCP, 2021-11, Vol.23 (45), p.25925-25932

Hur, Ji-Hyun

2021

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Mechanism of resistance distribution properties in oxide-based resistance switching nanodevice

Physics letters. A, 2019-03, Vol.383 (11), p.1182-1186

Hur, Ji-Hyun

2019

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Quantum Simulation Study on Performance Optimization of GaSb/InAs nanowire Tunneling FET

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2016, 16(5), 71, pp.630-634

2016

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A theoretical modeling of photocurrent generation and decay in layered MoS2 thin-film transistor photosensors

Journal of physics. D, Applied physics, 2017-01, Vol.50 (6)

2017

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III-V compound semiconductors for mass-produced nano-electronics: theoretical studies on mobility degradation by dislocation

Scientific reports, 2016-02, Vol.6 (1), p.22001-22001, Article 22001

2016

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Pulse I-V characterization of a nano-crystalline oxide device with sub-gap density of states

Nanotechnology, 2016-05, Vol.27 (21), p.215203-215203

2016

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Phase transformation induced resistive switching behavior in Al/Cu2Se/Pt

Journal of physics. D, Applied physics, 2017-02, Vol.50 (13)

2017

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Dislocation effects in FinFETs for different III-V compound semiconductors

Journal of physics. D, Applied physics, 2016-04, Vol.49 (15), p.155101-155105

2016

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Theoretical studies on distribution of resistances in multilevel bipolar oxide resistive memory by Monte Carlo method

Applied physics letters, 2013-09, Vol.103 (11)

2013

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First-principles study on multiferroicity in the Cr 2 Ge 2 Te 6 /In 2 Se 3 heterostructure influenced by finite strains

Physical chemistry chemical physics : PCCP, 2021-11, Vol.23 (45), p.25925-25932

Hur, Ji-Hyun

2021

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First-principles study on multiferroicity in the CrGeTe/InSe heterostructure influenced by finite strains

Physical chemistry chemical physics : PCCP, 2021-11, Vol.23 (45), p.25925-25932

Hur, Ji-Hyun

2021

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Multi-level switching of triple-layered TaOx RRAM with excellent reliability for storage class memory

2012 Symposium on VLSI Technology (VLSIT), 2012, p.71-72

2012

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Bi-layered RRAM with unlimited endurance and extremely uniform switching

2011 Symposium on VLSI Technology - Digest of Technical Papers, 2011, p.52-53

2011

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A Monte Carlo simulation for bipolar resistive memory switching in large band-gap oxides

Applied physics letters, 2015-11, Vol.107 (20)

2015

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Modeling for bipolar resistive memory switching in transition-metal oxides

Physical review. B, Condensed matter and materials physics, 2010-10, Vol.82 (15), Article 155321

2010

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Tetracosanoic acids produced by 3-ketoacyl-CoA synthase 17 are required for synthesizing seed coat suberin in Arabidopsis

Journal of experimental botany, 2024-03, Vol.75 (6), p.1767

2024

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A ZrO 2 /TaO x Bilayer Oxide Resistive Memory Exhibiting Near All-Around Performances

Journal of physical chemistry. C, 2020-07, Vol.124 (30), p.16624-16628

2020

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Quantitative analysis of charge trapping and classification of sub-gap states in MoS 2 TFT by pulse I-V method

Nanotechnology, 2018-04, Vol.29 (17), p.175704

2018

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First principles study of oxygen vacancy activation energy barrier in zirconia-based resistive memory

The origin of the exceptionally low activation energy of oxygen vacancy in tantalum pentoxide based resistive memory

Fast transient charging behavior of HfInZnO thin-film transistor

Tuning of ionic mobility to improve the resistive switching behavior of Zn-doped CeO2

A study on mechanism of resistance distribution characteristics of oxide-based resistive memory

Theoretical study of potential performance of armchair graphene nanoribbon field effect transistors: Dependence on channel dimensions and contact resistance

A plasma-treated chalcogenide switch device for stackable scalable 3D nanoscale memory

First-principles study on multiferroicity in the Cr2Ge2Te6/In2Se3 heterostructure influenced by finite strains

Mechanism of resistance distribution properties in oxide-based resistance switching nanodevice

Quantum Simulation Study on Performance Optimization of GaSb/InAs nanowire Tunneling FET

A theoretical modeling of photocurrent generation and decay in layered MoS2 thin-film transistor photosensors

III-V compound semiconductors for mass-produced nano-electronics: theoretical studies on mobility degradation by dislocation

Pulse I-V characterization of a nano-crystalline oxide device with sub-gap density of states

Phase transformation induced resistive switching behavior in Al/Cu2Se/Pt

Dislocation effects in FinFETs for different III-V compound semiconductors

Theoretical studies on distribution of resistances in multilevel bipolar oxide resistive memory by Monte Carlo method

First-principles study on multiferroicity in the Cr 2 Ge 2 Te 6 /In 2 Se 3 heterostructure influenced by finite strains

First-principles study on multiferroicity in the CrGeTe/InSe heterostructure influenced by finite strains

Multi-level switching of triple-layered TaOx RRAM with excellent reliability for storage class memory

Bi-layered RRAM with unlimited endurance and extremely uniform switching

A Monte Carlo simulation for bipolar resistive memory switching in large band-gap oxides

Modeling for bipolar resistive memory switching in transition-metal oxides

Tetracosanoic acids produced by 3-ketoacyl-CoA synthase 17 are required for synthesizing seed coat suberin in Arabidopsis

A ZrO 2 /TaO x Bilayer Oxide Resistive Memory Exhibiting Near All-Around Performances

Quantitative analysis of charge trapping and classification of sub-gap states in MoS 2 TFT by pulse I-V method

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