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First principles study of oxygen vacancy activation energy barrier in zirconia-based resistive memory

Scientific reports, 2020-03, Vol.10 (1), p.5405-5405, Article 5405

Hur, Ji-Hyun

2020

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The origin of the exceptionally low activation energy of oxygen vacancy in tantalum pentoxide based resistive memory

Scientific reports, 2019-11, Vol.9 (1), p.17019-9, Article 17019

Hur, Ji-Hyun

2019

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Fast transient charging behavior of HfInZnO thin-film transistor

Applied physics letters, 2015-08, Vol.107 (9)

2015

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Quantitative analysis of charge trapping and classification of sub-gap states in MoS2 TFT by pulse I-V method

Nanotechnology, 2018-03, Vol.29 (17), p.175704-175704

2018

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Tuning of ionic mobility to improve the resistive switching behavior of Zn-doped CeO2

Scientific reports, 2019-12, Vol.9 (1), p.1-10, Article 19387

2019

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A study on mechanism of resistance distribution characteristics of oxide-based resistive memory

Scientific reports, 2019-01, Vol.9 (1), p.302-302, Article 302

2019

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Theoretical study of potential performance of armchair graphene nanoribbon field effect transistors: Dependence on channel dimensions and contact resistance

Journal of applied physics, 2017-12, Vol.122 (23)

2017

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A plasma-treated chalcogenide switch device for stackable scalable 3D nanoscale memory

Nature communications, 2013, Vol.4 (1), p.2629-2629, Article 2629

2013

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Universal Memory Characteristics and Degradation Features of ZrO2‐Based Bipolar Resistive Memory

Advanced electronic materials, 2020-08, Vol.6 (8), p.n/a

2020

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First-principles study on multiferroicity in the Cr2Ge2Te6/In2Se3 heterostructure influenced by finite strains

Physical chemistry chemical physics : PCCP, 2021-11, Vol.23 (45), p.25925-25932

Hur, Ji-Hyun

2021

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Theoretical studies on oxygen vacancy migration energy barrier in the orthorhombic λ phase Ta2O5

Computational materials science, 2019-11, Vol.169, p.109148, Article 109148

Hur, Ji-Hyun

2019

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Mechanism of resistance distribution properties in oxide-based resistance switching nanodevice

Physics letters. A, 2019-03, Vol.383 (11), p.1182-1186

Hur, Ji-Hyun

2019

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Resistive Switching in Solution-Processed Copper Oxide (Cu x O) by Stoichiometry Tuning

Journal of physical chemistry. C, 2018-05, Vol.122 (20), p.11076-11085

2018

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Tunable resistive switching of vertical ReSe2/graphene hetero-structure enabled by Schottky barrier height and DUV light

Journal of alloys and compounds, 2021-02, Vol.855, p.157310, Article 157310

2021

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A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

Nature materials, 2011-08, Vol.10 (8), p.625-630

2011

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Quantum Simulation Study on Performance Optimization of GaSb/InAs nanowire Tunneling FET

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2016, 16(5), 71, pp.630-634

2016

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A theoretical modeling of photocurrent generation and decay in layered MoS2 thin-film transistor photosensors

Journal of physics. D, Applied physics, 2017-01, Vol.50 (6)

2017

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III-V compound semiconductors for mass-produced nano-electronics: theoretical studies on mobility degradation by dislocation

Scientific reports, 2016-02, Vol.6 (1), p.22001-22001, Article 22001

2016

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Pulse I-V characterization of a nano-crystalline oxide device with sub-gap density of states

Nanotechnology, 2016-05, Vol.27 (21), p.215203-215203

2016

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Effect of oxygen stoichiometry on the threshold switching of RF-sputtered NbOx (x = 2.0–2.5) films

Materials research bulletin, 2021-12, Vol.144, p.111492, Article 111492

2021

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Theoretical investigation of performance of armchair graphene nanoribbon field effect transistors

Nanotechnology, 2018-05, Vol.29 (18), p.185202-185202

2018

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Phase transformation induced resistive switching behavior in Al/Cu2Se/Pt

Journal of physics. D, Applied physics, 2017-02, Vol.50 (13)

2017

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Dislocation effects in FinFETs for different III-V compound semiconductors

Journal of physics. D, Applied physics, 2016-04, Vol.49 (15), p.155101-155105

2016

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Effect of hydrogen on dynamic charge transport in amorphous oxide thin film transistors

Nanotechnology, 2016-08, Vol.27 (32), p.325203-325203

2016

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Nanometer-Scale Oxide Thin Film Transistor with Potential for High-Density Image Sensor Applications

ACS applied materials & interfaces, 2011-01, Vol.3 (1), p.1-6

2011

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First principles study of oxygen vacancy activation energy barrier in zirconia-based resistive memory

The origin of the exceptionally low activation energy of oxygen vacancy in tantalum pentoxide based resistive memory

Fast transient charging behavior of HfInZnO thin-film transistor

Quantitative analysis of charge trapping and classification of sub-gap states in MoS2 TFT by pulse I-V method

Tuning of ionic mobility to improve the resistive switching behavior of Zn-doped CeO2

A study on mechanism of resistance distribution characteristics of oxide-based resistive memory

Theoretical study of potential performance of armchair graphene nanoribbon field effect transistors: Dependence on channel dimensions and contact resistance

A plasma-treated chalcogenide switch device for stackable scalable 3D nanoscale memory

Universal Memory Characteristics and Degradation Features of ZrO2‐Based Bipolar Resistive Memory

First-principles study on multiferroicity in the Cr2Ge2Te6/In2Se3 heterostructure influenced by finite strains

Theoretical studies on oxygen vacancy migration energy barrier in the orthorhombic λ phase Ta2O5

Mechanism of resistance distribution properties in oxide-based resistance switching nanodevice

Resistive Switching in Solution-Processed Copper Oxide (Cu x O) by Stoichiometry Tuning

Tunable resistive switching of vertical ReSe2/graphene hetero-structure enabled by Schottky barrier height and DUV light

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

Quantum Simulation Study on Performance Optimization of GaSb/InAs nanowire Tunneling FET

A theoretical modeling of photocurrent generation and decay in layered MoS2 thin-film transistor photosensors

III-V compound semiconductors for mass-produced nano-electronics: theoretical studies on mobility degradation by dislocation

Pulse I-V characterization of a nano-crystalline oxide device with sub-gap density of states

Effect of oxygen stoichiometry on the threshold switching of RF-sputtered NbOx (x = 2.0–2.5) films

Theoretical investigation of performance of armchair graphene nanoribbon field effect transistors

Phase transformation induced resistive switching behavior in Al/Cu2Se/Pt

Dislocation effects in FinFETs for different III-V compound semiconductors

Effect of hydrogen on dynamic charge transport in amorphous oxide thin film transistors

Nanometer-Scale Oxide Thin Film Transistor with Potential for High-Density Image Sensor Applications

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