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Fast transient charging behavior of HfInZnO thin-film transistor

Applied physics letters, 2015-08, Vol.107 (9)

2015

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Quantitative analysis of charge trapping and classification of sub-gap states in MoS2 TFT by pulse I-V method

Nanotechnology, 2018-03, Vol.29 (17), p.175704-175704

2018

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Theoretical study of potential performance of armchair graphene nanoribbon field effect transistors: Dependence on channel dimensions and contact resistance

Journal of applied physics, 2017-12, Vol.122 (23)

2017

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Universal Memory Characteristics and Degradation Features of ZrO2‐Based Bipolar Resistive Memory

Advanced electronic materials, 2020-08, Vol.6 (8), p.n/a

2020

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Theoretical studies on oxygen vacancy migration energy barrier in the orthorhombic λ phase Ta2O5

Computational materials science, 2019-11, Vol.169, p.109148, Article 109148

Hur, Ji-Hyun

2019

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Mechanism of resistance distribution properties in oxide-based resistance switching nanodevice

Physics letters. A, 2019-03, Vol.383 (11), p.1182-1186

Hur, Ji-Hyun

2019

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Resistive Switching in Solution-Processed Copper Oxide (Cu x O) by Stoichiometry Tuning

Journal of physical chemistry. C, 2018-05, Vol.122 (20), p.11076-11085

2018

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Tunable resistive switching of vertical ReSe2/graphene hetero-structure enabled by Schottky barrier height and DUV light

Journal of alloys and compounds, 2021-02, Vol.855, p.157310, Article 157310

2021

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A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

Nature materials, 2011-08, Vol.10 (8), p.625-630

2011

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A theoretical modeling of photocurrent generation and decay in layered MoS2 thin-film transistor photosensors

Journal of physics. D, Applied physics, 2017-01, Vol.50 (6)

2017

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Pulse I-V characterization of a nano-crystalline oxide device with sub-gap density of states

Nanotechnology, 2016-05, Vol.27 (21), p.215203-215203

2016

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Effect of oxygen stoichiometry on the threshold switching of RF-sputtered NbOx (x = 2.0–2.5) films

Materials research bulletin, 2021-12, Vol.144, p.111492, Article 111492

2021

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Theoretical investigation of performance of armchair graphene nanoribbon field effect transistors

Nanotechnology, 2018-05, Vol.29 (18), p.185202-185202

2018

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Phase transformation induced resistive switching behavior in Al/Cu2Se/Pt

Journal of physics. D, Applied physics, 2017-02, Vol.50 (13)

2017

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Dislocation effects in FinFETs for different III-V compound semiconductors

Journal of physics. D, Applied physics, 2016-04, Vol.49 (15), p.155101-155105

2016

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Effect of hydrogen on dynamic charge transport in amorphous oxide thin film transistors

Nanotechnology, 2016-08, Vol.27 (32), p.325203-325203

2016

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Nanometer-Scale Oxide Thin Film Transistor with Potential for High-Density Image Sensor Applications

ACS applied materials & interfaces, 2011-01, Vol.3 (1), p.1-6

2011

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Modeling for multilevel switching in oxide-based bipolar resistive memory

Nanotechnology, 2012-06, Vol.23 (22), p.225702-1-5

2012

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Theoretical studies on distribution of resistances in multilevel bipolar oxide resistive memory by Monte Carlo method

Applied physics letters, 2013-09, Vol.103 (11)

2013

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Multi-level switching of triple-layered TaOx RRAM with excellent reliability for storage class memory

2012 Symposium on VLSI Technology (VLSIT), 2012, p.71-72

2012

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Bi-layered RRAM with unlimited endurance and extremely uniform switching

2011 Symposium on VLSI Technology - Digest of Technical Papers, 2011, p.52-53

2011

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A Monte Carlo simulation for bipolar resistive memory switching in large band-gap oxides

Applied physics letters, 2015-11, Vol.107 (20)

2015

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First principles study of the strain effect on band gap of λ phase Ta2O5

Computational materials science, 2019-06, Vol.164, p.17-21

Hur, Ji-Hyun

2019

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Modeling for bipolar resistive memory switching in transition-metal oxides

Physical review. B, Condensed matter and materials physics, 2010-10, Vol.82 (15), Article 155321

2010

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Dislocation scatterings in p-type Si1−xGex under weak electric field

Nanotechnology, 2015-12, Vol.26 (49)

2015

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Fast transient charging behavior of HfInZnO thin-film transistor

Quantitative analysis of charge trapping and classification of sub-gap states in MoS2 TFT by pulse I-V method

Theoretical study of potential performance of armchair graphene nanoribbon field effect transistors: Dependence on channel dimensions and contact resistance

Universal Memory Characteristics and Degradation Features of ZrO2‐Based Bipolar Resistive Memory

Theoretical studies on oxygen vacancy migration energy barrier in the orthorhombic λ phase Ta2O5

Mechanism of resistance distribution properties in oxide-based resistance switching nanodevice

Resistive Switching in Solution-Processed Copper Oxide (Cu x O) by Stoichiometry Tuning

Tunable resistive switching of vertical ReSe2/graphene hetero-structure enabled by Schottky barrier height and DUV light

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

A theoretical modeling of photocurrent generation and decay in layered MoS2 thin-film transistor photosensors

Pulse I-V characterization of a nano-crystalline oxide device with sub-gap density of states

Effect of oxygen stoichiometry on the threshold switching of RF-sputtered NbOx (x = 2.0–2.5) films

Theoretical investigation of performance of armchair graphene nanoribbon field effect transistors

Phase transformation induced resistive switching behavior in Al/Cu2Se/Pt

Dislocation effects in FinFETs for different III-V compound semiconductors

Effect of hydrogen on dynamic charge transport in amorphous oxide thin film transistors

Nanometer-Scale Oxide Thin Film Transistor with Potential for High-Density Image Sensor Applications

Modeling for multilevel switching in oxide-based bipolar resistive memory

Theoretical studies on distribution of resistances in multilevel bipolar oxide resistive memory by Monte Carlo method

Multi-level switching of triple-layered TaOx RRAM with excellent reliability for storage class memory

Bi-layered RRAM with unlimited endurance and extremely uniform switching

A Monte Carlo simulation for bipolar resistive memory switching in large band-gap oxides

First principles study of the strain effect on band gap of λ phase Ta2O5

Modeling for bipolar resistive memory switching in transition-metal oxides

Dislocation scatterings in p-type Si1−xGex under weak electric field

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