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Integrated two-state AWG-based multiwavelength laser

IEEE photonics technology letters, 2005-05, Vol.17 (5), p.956-958

2005

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Measurement of reflectivity of butt-joint active-passive interfaces in integrated extended cavity lasers

IEEE photonics technology letters, 2005-11, Vol.17 (11), p.2265-2267

2005

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IEEE_Xplore

Monolithically integrated 80-gb/s AWG-based all-optical wavelength converter

IEEE photonics technology letters, 2006-08, Vol.18 (15), p.1627-1629

2006

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IEEE_Xplore

Progress in long-wavelength strained-layer InGaAs(P) quantum-well semiconductor lasers and amplifiers

IEEE journal of quantum electronics, 1994-02, Vol.30 (2), p.477-499

1994

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IEEE_Xplore

Self-switching in Mach-Zehnder interferometers with SOA phase shifters

IEEE photonics technology letters, 2005-11, Vol.17 (11), p.2301-2303

2005

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IEEE_Xplore

Wavelength selection in an integrated multiwavelength ring laser

IEEE journal of quantum electronics, 2004-09, Vol.40 (9), p.1208-1216

2004

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IEEE_Xplore

Effect of the first-order mode in access waveguides on the performance of unbalanced MMI couplers

IEEE photonics technology letters, 2004-08, Vol.16 (8), p.1882-1884

2004

Link zum Volltext
IEEE_Xplore

An integrated coupled-cavity 16-wavelength digitally tunable laser

IEEE photonics technology letters, 2002-12, Vol.14 (12), p.1653-1655

2002

Link zum Volltext
IEEE_Xplore

8×10 Gb/s DWDM transmission over 240 km of standard fiber using a cascade of semiconductor optical amplifiers

IEEE photonics technology letters, 2000-08, Vol.12 (8), p.1082

2000

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Integrated SOA-MZI for pattern-effect-free amplification

Electronics letters, 2005-04, Vol.41 (9), p.549-551

2005

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An integrated 4×4-channel multiwavelength laser on InP

IEEE photonics technology letters, 2003-03, Vol.15 (3), p.368

2003

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An integrated 4 x 4-channel multiwavelength laser on InP

IEEE photonics technology letters, 2003-03, Vol.15 (3), p.368-370

2003

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IEEE_Xplore

A compact nine-channel multiwavelength laser

IEEE photonics technology letters, 1996-09, Vol.8 (9), p.1139-1141

1996

Link zum Volltext
IEEE_Xplore

High-performance 1.5 mu m wavelength InGaAs-InGaAsP strained quantum well lasers and amplifiers

IEEE journal of quantum electronics, 1991-06, Vol.27 (6), p.1426-1439

1991

Link zum Volltext
IEEE_Xplore

High-performance λ=1.3 μm InGaAsP-InP strained-layer quantum well lasers

Journal of lightwave technology, 1994-01, Vol.12 (1), p.28-37

1994

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Reduced intermodulation distortion in 1300 nm gain-clamped MQW laser amplifiers

IEEE photonics technology letters, 1995-03, Vol.7 (3), p.284-286

1995

Link zum Volltext
IEEE_Xplore

Polarization resolved, complete characterization of 1310 nm fiber pigtailed multiple-quantum-well optical amplifiers

Journal of lightwave technology, 1996-06, Vol.14 (6), p.1524-1533

1996

Link zum Volltext
IEEE_Xplore

Defect chemistry of CuInS 2, investigated by electrical measurements and Mössbauer spectroscopy

The Journal of physics and chemistry of solids, 1983, Vol.44 (3), p.237-244

Binsma, J.J.M.

1983

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Verfügbarkeit prüfen

Phase relations in the system Cu2S-In2S3

Journal of crystal growth, 1980-01, Vol.50 (2), p.429-436

1980

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High-gain 1310 nm semiconductor optical amplifier modules with a built-in amplified signal monitor for optical gain control

IEEE photonics technology letters, 1997-03, Vol.9 (3), p.309-311

1997

Link zum Volltext
IEEE_Xplore

Noise figure of saturated 1310-nm polarization insensitive multiple-quantum-well optical amplifiers

IEEE photonics technology letters, 1996-07, Vol.8 (7), p.873-875

1996

Link zum Volltext
IEEE_Xplore

Self-phase modulation coefficient of multiple-quantum-well optical amplifiers

IEEE photonics technology letters, 1996-07, Vol.8 (7), p.876-878

1996

Link zum Volltext
IEEE_Xplore

High-gain, high-power 1550-nm polarization independent MQW optical amplifier

IEEE photonics technology letters, 1996-09, Vol.8 (9), p.1142-1144

1996

Link zum Volltext
IEEE_Xplore

Submilliamp threshold current (0.62 mA at 0°C) and high output power (220mW) 1.5 μm tensile strained InGaAs single quantum well lasers

Electronics letters, 1992-04, Vol.28 (9), p.829-830

1992

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Verfügbarkeit prüfen

High-gain 1310-nm reflective semiconductor optical amplifiers with low-gain uncertainty

IEEE photonics technology letters, 1997-01, Vol.9 (1), p.37-39

1997

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IEEE_Xplore

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Integrated two-state AWG-based multiwavelength laser

Measurement of reflectivity of butt-joint active-passive interfaces in integrated extended cavity lasers

Monolithically integrated 80-gb/s AWG-based all-optical wavelength converter

Progress in long-wavelength strained-layer InGaAs(P) quantum-well semiconductor lasers and amplifiers

Self-switching in Mach-Zehnder interferometers with SOA phase shifters

Wavelength selection in an integrated multiwavelength ring laser

Effect of the first-order mode in access waveguides on the performance of unbalanced MMI couplers

An integrated coupled-cavity 16-wavelength digitally tunable laser

8×10 Gb/s DWDM transmission over 240 km of standard fiber using a cascade of semiconductor optical amplifiers

Integrated SOA-MZI for pattern-effect-free amplification

An integrated 4×4-channel multiwavelength laser on InP

An integrated 4 x 4-channel multiwavelength laser on InP

A compact nine-channel multiwavelength laser

High-performance 1.5 mu m wavelength InGaAs-InGaAsP strained quantum well lasers and amplifiers

High-performance λ=1.3 μm InGaAsP-InP strained-layer quantum well lasers

Reduced intermodulation distortion in 1300 nm gain-clamped MQW laser amplifiers

Polarization resolved, complete characterization of 1310 nm fiber pigtailed multiple-quantum-well optical amplifiers

Defect chemistry of CuInS 2, investigated by electrical measurements and Mössbauer spectroscopy

Phase relations in the system Cu2S-In2S3

High-gain 1310 nm semiconductor optical amplifier modules with a built-in amplified signal monitor for optical gain control

Noise figure of saturated 1310-nm polarization insensitive multiple-quantum-well optical amplifiers

Self-phase modulation coefficient of multiple-quantum-well optical amplifiers

High-gain, high-power 1550-nm polarization independent MQW optical amplifier

Submilliamp threshold current (0.62 mA at 0°C) and high output power (220mW) 1.5 μm tensile strained InGaAs single quantum well lasers

High-gain 1310-nm reflective semiconductor optical amplifiers with low-gain uncertainty

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