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Modeling the polysilicon depletion effect and its impact on submicrometer CMOS circuit performance

IEEE transactions on electron devices, 1995-05, Vol.42 (5), p.935-943

1995

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Transcribed Digits and Apparel Classification using Convolutional Neural Network

2021 International Conference on Communication information and Computing Technology (ICCICT), 2021, p.1-6

2021

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PCIM: a physically based continuous short-channel IGFET model for circuit simulation

IEEE transactions on electron devices, 1994-06, Vol.41 (6), p.988-997

1994

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A unified RLC model for high-speed on-chip interconnects

IEEE transactions on electron devices, 2003-06, Vol.50 (6), p.1501-1510

2003

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Atto-farad measurement and modeling of on-chip coupling capacitance

IEEE electron device letters, 2004-02, Vol.25 (2), p.92-94

2004

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MOSFET substrate current model for circuit simulation

IEEE transactions on electron devices, 1991-06, Vol.38 (6), p.1392-1398

1991

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An analytic polysilicon depletion effect model for MOSFETs

IEEE electron device letters, 1994-04, Vol.15 (4), p.129-131

1994

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Interconnect characterization of X architecture diagonal lines for VLSI design

IEEE transactions on semiconductor manufacturing, 2005-05, Vol.18 (2), p.262-271

2005

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Modeling and extraction of interconnect capacitances for multilayer VLSI circuits

IEEE transactions on computer-aided design of integrated circuits and systems, 1996-01, Vol.15 (1), p.58-67

1996

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A new technique for measuring MOSFET inversion layer mobility

IEEE transactions on electron devices, 1993-06, Vol.40 (6), p.1134-1139

1993

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A semi-empirical model of the MOSFET inversion layer mobility for low-temperature operation

IEEE transactions on electron devices, 1987-01, Vol.34 (1), p.89-93

1987

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Electron and hole mobilities in silicon as a function of concentration and temperature

IEEE transactions on electron devices, 1982-02, Vol.29 (2), p.292-295

1982

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MOSFET modeling gets physical

IEEE circuits and devices magazine, 2001-11, Vol.17 (6), p.29-36

2001

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OPTIMA: A nonlinear model parameter extraction program with statistical confidence region algorithms

IEEE transactions on computer-aided design of integrated circuits and systems, 1993-07, Vol.12 (7), p.982-987

1993

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Plasma production in large volume plasma system by compact electron cyclotron resonance sources

2013 Abstracts IEEE International Conference on Plasma Science (ICOPS), 2013, p.1-1

2013

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Circuit design guidelines for n-channel MOSFET hot carrier robustness

IEEE transactions on electron devices, 1993-07, Vol.40 (7), p.1284-1295

1993

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Modeling the anomalous threshold voltage behavior of submicrometer MOSFET's

IEEE electron device letters, 1992-02, Vol.13 (2), p.92-94

1992

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Direct N-body Kernels for Multicore Platforms

2009 International Conference on Parallel Processing, 2009, p.379-387

2009

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Effects of source/drain implants on short-channel MOSFET I-V and C-V characteristics

IEEE transactions on electron devices, 1995-07, Vol.42 (7), p.1255-1261

1995

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A new method of determination of minority carrier diffusion length in the base region of silicon solar cells

IEEE transactions on electron devices, 1994-03, Vol.41 (3), p.367-372

1994

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Instruction Selection in ASIP Synthesis Using Functional Matching

2010 23rd International Conference on VLSI Design, 2010, p.146-151

2010

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BEST: A symbolic testing tool for predicting multi-threaded program failures

2011 26th IEEE/ACM International Conference on Automated Software Engineering (ASE 2011), 2011, p.596-599

2011

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Development of compact electron cyclotron resonance plasma source

2013 Abstracts IEEE International Conference on Plasma Science (ICOPS), 2013, p.1-1

2013

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SPICE model and parameters for fully-depleted SOI MOSFET's including self-heating

IEEE electron device letters, 1994-10, Vol.15 (10), p.374-376

1994

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Effect of polysilicon depletion on MOSFET I-V characteristics

Electronics letters, 1993, Vol.29 (13), p.1208-1209

1993

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Modeling the polysilicon depletion effect and its impact on submicrometer CMOS circuit performance

Transcribed Digits and Apparel Classification using Convolutional Neural Network

PCIM: a physically based continuous short-channel IGFET model for circuit simulation

A unified RLC model for high-speed on-chip interconnects

Atto-farad measurement and modeling of on-chip coupling capacitance

MOSFET substrate current model for circuit simulation

An analytic polysilicon depletion effect model for MOSFETs

Interconnect characterization of X architecture diagonal lines for VLSI design

Modeling and extraction of interconnect capacitances for multilayer VLSI circuits

A new technique for measuring MOSFET inversion layer mobility

A semi-empirical model of the MOSFET inversion layer mobility for low-temperature operation

Electron and hole mobilities in silicon as a function of concentration and temperature

MOSFET modeling gets physical

OPTIMA: A nonlinear model parameter extraction program with statistical confidence region algorithms

Plasma production in large volume plasma system by compact electron cyclotron resonance sources

Circuit design guidelines for n-channel MOSFET hot carrier robustness

Modeling the anomalous threshold voltage behavior of submicrometer MOSFET's

Direct N-body Kernels for Multicore Platforms

Effects of source/drain implants on short-channel MOSFET I-V and C-V characteristics

A new method of determination of minority carrier diffusion length in the base region of silicon solar cells

Instruction Selection in ASIP Synthesis Using Functional Matching

BEST: A symbolic testing tool for predicting multi-threaded program failures

Development of compact electron cyclotron resonance plasma source

SPICE model and parameters for fully-depleted SOI MOSFET's including self-heating

Effect of polysilicon depletion on MOSFET I-V characteristics

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