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Transport and breakdown analysis for improved figure-of-merit for AlGaN power devices

Journal of applied physics, 2017-02, Vol.121 (5)

2017

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External charge compensation in etched gallium nitride measured by x-ray photoelectron spectroscopy

Journal of applied physics, 2022-05, Vol.131 (18)

2022

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Layered phase composition and microstructure of κ-Ga2O3-dominant heteroepitaxial films grown via MOCVD

Journal of applied physics, 2022-02, Vol.131 (5)

2022

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Bound modes in the continuum based phononic waveguides

Journal of applied physics, 2022-09, Vol.132 (11)

2022

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A step-by-step guide to perform x-ray photoelectron spectroscopy

Journal of applied physics, 2022-07, Vol.132 (1)

2022

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Redshifted biexciton and trion lines in strongly confined (211)B InAs/GaAs piezoelectric quantum dots

Journal of applied physics, 2022-03, Vol.131 (12)

2022

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Comparison of atomic layer deposited Al2O3 and (Ta2O5)0.12(Al2O3)0.88 gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors

Journal of applied physics, 2019-07, Vol.126 (3)

2019

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Room temperature two-dimensional electron gas scattering time, effective mass, and mobility parameters in AlxGa1−xN/GaN heterostructures (0.07 ≤ x ≤ 0.42)

Journal of applied physics, 2023-11, Vol.134 (18)

2023

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Formation of periodic interfacial misfit dislocation array at the InSb/GaAs interface via surface anion exchange

Journal of applied physics, 2016-07, Vol.120 (3)

2016

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Influence of LO and LA phonon processes on thermal-nonequilibrium excitation and deexcitation dynamics of excitons in GaN, AlN, and ZnO

Journal of applied physics, 2019-05, Vol.125 (20)

2019

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Carrier dynamics in bulk GaN

Journal of applied physics, 2012-01, Vol.111 (2), p.023702-023702-8

2012

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Disorder induced gap states as a cause of threshold voltage instabilities in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

Journal of applied physics, 2017-12, Vol.122 (22)

2017

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Magneto-optics of layered two-dimensional semiconductors and heterostructures: Progress and prospects

Journal of applied physics, 2021-03, Vol.129 (12)

Arora, Ashish

2021

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Photonic band properties of the moiré Kagome lattice

Journal of applied physics, 2024-02, Vol.135 (8)

2024

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Low-frequency noise and defects in AlGaAs/InGaAs/GaAs pseudomorphic high-electron mobility transistors

Journal of applied physics, 2024-01, Vol.135 (2)

2024

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Evolution of field dependent carrier trapping during off-state degradation for GaN based metal oxide semiconductor high electron mobility transistors

Journal of applied physics, 2018-10, Vol.124 (16)

2018

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Evaluation of the acoustoelectric effect in the thickness direction of c-plane ZnO single crystals by Brillouin scattering

Journal of applied physics, 2017-06, Vol.121 (23)

2017

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Simultaneous magneto-electro-optical measurements in modulation-doped quantum well: An investigation on magneto-photoluminescence intensity oscillations

Journal of applied physics, 2019-05, Vol.125 (20)

2019

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Effect of substrate-induced strain in the transport properties of AlGaN/GaN heterostructures

Journal of applied physics, 2010-07, Vol.108 (2), p.023707-023707-4

2010

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High temperature thermoelectric properties of optimized InGaN

Journal of applied physics, 2011-12, Vol.110 (12), p.123709-123709-6

2011

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Simulation of AlGaN/GaN high-electron-mobility transistor gauge factor based on two-dimensional electron gas density and electron mobility

Journal of applied physics, 2010-11, Vol.108 (10), p.104502-104502-6

2010

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The critical role of growth temperature on the structural and electrical properties of AlGaN/GaN high electron mobility transistor heterostructures grown on Si(111)

Journal of applied physics, 2009-02, Vol.105 (3), p.033701-033701-8

2009

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Large zero-field spin splitting in AlGaN/AlN/GaN/AlN heterostructures

Journal of applied physics, 2009-05, Vol.105 (9), p.093701-093701-6

2009

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Correlation of self-organized surface nanostructures and anisotropic electron transport in nonpolar ZnO ( 10 − 10 ) homoepitaxy

Journal of applied physics, 2006-06, Vol.99 (12), p.124307-124307-8

2006

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Influence of N on the electronic properties of GaAsN alloy filmsand heterostructures

Journal of applied physics, 2007-11, Vol.102 (10), p.103710-103710-8

2007

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Transport and breakdown analysis for improved figure-of-merit for AlGaN power devices

External charge compensation in etched gallium nitride measured by x-ray photoelectron spectroscopy

Layered phase composition and microstructure of κ-Ga2O3-dominant heteroepitaxial films grown via MOCVD

Bound modes in the continuum based phononic waveguides

A step-by-step guide to perform x-ray photoelectron spectroscopy

Redshifted biexciton and trion lines in strongly confined (211)B InAs/GaAs piezoelectric quantum dots

Comparison of atomic layer deposited Al2O3 and (Ta2O5)0.12(Al2O3)0.88 gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors

Room temperature two-dimensional electron gas scattering time, effective mass, and mobility parameters in AlxGa1−xN/GaN heterostructures (0.07 ≤ x ≤ 0.42)

Formation of periodic interfacial misfit dislocation array at the InSb/GaAs interface via surface anion exchange

Influence of LO and LA phonon processes on thermal-nonequilibrium excitation and deexcitation dynamics of excitons in GaN, AlN, and ZnO

Carrier dynamics in bulk GaN

Disorder induced gap states as a cause of threshold voltage instabilities in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

Magneto-optics of layered two-dimensional semiconductors and heterostructures: Progress and prospects

Photonic band properties of the moiré Kagome lattice

Low-frequency noise and defects in AlGaAs/InGaAs/GaAs pseudomorphic high-electron mobility transistors

Evolution of field dependent carrier trapping during off-state degradation for GaN based metal oxide semiconductor high electron mobility transistors

Evaluation of the acoustoelectric effect in the thickness direction of c-plane ZnO single crystals by Brillouin scattering

Simultaneous magneto-electro-optical measurements in modulation-doped quantum well: An investigation on magneto-photoluminescence intensity oscillations

Effect of substrate-induced strain in the transport properties of AlGaN/GaN heterostructures

High temperature thermoelectric properties of optimized InGaN

Simulation of AlGaN/GaN high-electron-mobility transistor gauge factor based on two-dimensional electron gas density and electron mobility

The critical role of growth temperature on the structural and electrical properties of AlGaN/GaN high electron mobility transistor heterostructures grown on Si(111)

Large zero-field spin splitting in AlGaN/AlN/GaN/AlN heterostructures

Correlation of self-organized surface nanostructures and anisotropic electron transport in nonpolar ZnO ( 10 − 10 ) homoepitaxy

Influence of N on the electronic properties of GaAsN alloy filmsand heterostructures

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